l30 diode smd
Abstract: L30 "double diode" smd diode L30 L30 general purpose double diode sot143 marking code JTp BAV23 SOT143 L30 SOT143 A2 DIODE SMD CODE MARKING BAV23 smd diode marking L30
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAV23 General purpose double diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose double diode BAV23 FEATURES DESCRIPTION
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M3D070
BAV23
BAV23
OT143
l30 diode smd
L30 "double diode"
smd diode L30
L30 general purpose double diode
sot143 marking code JTp
BAV23 SOT143
L30 SOT143
A2 DIODE SMD CODE MARKING
smd diode marking L30
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BAV23 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES 2012. 11. 13 Revision No : 1 1/2
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BAV23
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BAV23
Abstract: sot 23 bav23 marking code py
Text: BAV23 / SE / CC / CA SURFACE MOUNT SWITCHING DIODES BAV23 BAV23SE 3 1 BAV23CC 3 3 2 1 BAV23CA 1 2 3 2 1 2 SOT-23 Plastic Package BAV23SE Marking Code: PY BAV23CC Marking Code: PZ BAV23CA Marking Code: RA Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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BAV23
BAV23
BAV23SE
BAV23CC
BAV23CA
OT-23
BAV23SE
BAV23CC
BAV23CA
sot 23 bav23
marking code py
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BAV23SE
Abstract: BAV23 sot 23 bav23 marking code TS
Text: BAV23 / SE / CC / CA SURFACE MOUNT SWITCHING DIODES BAV23 BAV23SE 3 1 BAV23CC 3 3 2 1 BAV23CA 1 2 3 2 1 2 SOT-23 Plastic Package BAV23SE Marking Code: PY BAV23CC Marking Code: PZ BAV23CA Marking Code: RA Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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BAV23
BAV23
BAV23SE
BAV23CC
BAV23CA
OT-23
BAV23SE
BAV23CC
BAV23CA
sot 23 bav23
marking code TS
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diode marking code 7
Abstract: Diode marking SE marking CA BAV23 marking code py marking code TS
Text: BAV23 / SE / CC / CA SURFACE MOUNT SWITCHING DIODES BAV23 BAV23SE 3 1 BAV23CC 3 3 2 1 BAV23CA 1 2 3 2 1 2 SOT-23 Plastic Package BAV23SE Marking Code: PY BAV23CC Marking Code: PZ BAV23CA Marking Code: RA Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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BAV23
BAV23
BAV23SE
BAV23CC
BAV23CA
OT-23
BAV23SE
BAV23CC
BAV23CA
diode marking code 7
Diode marking SE
marking CA
marking code py
marking code TS
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BAV23A/DG
Abstract: BAV23 BAV23A BAV23C BAV23S SOT23 NXP power dissipation TO-236AB
Text: BAV23 series Dual high-voltage switching diodes Rev. 07 — 19 March 2010 Product data sheet 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview
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BAV23
BAV23A
O-236AB
BAV23C
BAV23S
BAV23
OT143B
BAV23A/DG
BAV23A
BAV23C
BAV23S
SOT23 NXP power dissipation TO-236AB
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BAV23 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES ・Low Leakage Current. ・Repetitive Peak Reverse Voltage : VRRM≦250V. ・Low Capacitance : CT≦2pF. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING
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BAV23
100mA
200mA
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BAV23
Abstract: BAV23S smd marking Yd BAV23 diode
Text: BAV23 series Dual high-voltage switching diodes Rev. 06 — 3 March 2008 Product data sheet 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview
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BAV23
BAV23A/DG
O-236AB
BAV23C/DG
BAV23S
OT143B
BAV23S/DG
BAV23
BAV23S
smd marking Yd
BAV23 diode
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BAV23
Abstract: ct2p
Text: SEMICONDUCTOR BAV23 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES ・Low Leakage Current. ・Repetitive Peak Reverse Voltage : VRRM≦250V. ・Low Capacitance : CT≦2pF. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING
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VRRM250V.
BAV23
200mA
100mA
BAV23
ct2p
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l30 diode smd
Abstract: zy Marking code sot23 MARKING SOT23 .DG diode NXP marking code N1 SOT23 NXP power dissipation TO-236AB l30 sot23-4 smd diode marking YD N1 MARKING CODE SOT23 smd diode L30 smd diode marking L30
Text: BAV23 series Dual high-voltage switching diodes 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1] Package Configuration
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BAV23
BAV23A/DG
O-236AB
BAV23C/DG
BAV23S
OT143B
BAV23S/DG
BAV23
l30 diode smd
zy Marking code sot23
MARKING SOT23 .DG
diode NXP marking code N1
SOT23 NXP power dissipation TO-236AB
l30 sot23-4
smd diode marking YD
N1 MARKING CODE SOT23
smd diode L30
smd diode marking L30
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l30 diode smd
Abstract: L30 "double diode" smd diode L30 BAV23 SOT143 L30 general purpose double diode sot143 marking code JTp L30 SOT143 A2 DIODE SMD CODE MARKING BAV23 MAM059
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D070 BAV23 General purpose double diode Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Product specification General purpose double diode
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M3D070
BAV23
BAV23
OT143
l30 diode smd
L30 "double diode"
smd diode L30
BAV23 SOT143
L30 general purpose double diode
sot143 marking code JTp
L30 SOT143
A2 DIODE SMD CODE MARKING
MAM059
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Untitled
Abstract: No abstract text available
Text: Product specification BAV23 Unit: mm Features Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage:max. 200 V Repetitive peak reverse voltage:max. 250 V Repetitive peak forward current:max. 625 mA. Absolute Maximum Ratings Ta = 25
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BAV23
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l30 diode smd
Abstract: SMD L30 smd diode L30 L30 "double diode" smd diode marking L30 l30 diodes L30 general purpose double diode JTp smd diode MARKING L30 BAV23
Text: Diodes SMD Type General Purpose Double Diode BAV23 Unit: mm Features Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage:max. 200 V Repetitive peak reverse voltage:max. 250 V Repetitive peak forward current:max. 625 mA.
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BAV23
l30 diode smd
SMD L30
smd diode L30
L30 "double diode"
smd diode marking L30
l30 diodes
L30 general purpose double diode
JTp smd diode
MARKING L30
BAV23
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BAV23A
Abstract: KT6 marking diode kt7 diode KL31 KT7 marking diode BAV23C sot 23 bav23 BAV23 BAV23S kt6 marking
Text: BAV23 Series BAV23A / BAV23C / BAV23S Plastic Encapsulated Schottky Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES z z z A Fast Switching Speed For General Purpose Switching Applications
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BAV23
BAV23A
BAV23C
BAV23S
OT-23
BAV23A,
BAV23C,
BAV23S,
01-June-2007
KT6 marking diode
kt7 diode
KL31
KT7 marking diode
sot 23 bav23
BAV23S
kt6 marking
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KT6 marking diode
Abstract: kt7 diode
Text: WILLAS FM120-M+ THRU BAV23/A/C/S BAV23A/C/S SOT-23 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE SCHOTTKY BARRIER DIODE Package outline Features • Batch process design, excellent power dissipation offers
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OD-123+
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
KT6 marking diode
kt7 diode
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BAV23 SOT143
Abstract: BAV23-7
Text: BAV23 Features Mechanical Data • • • • • • • • Fast Switching Speed High Reverse Breakdown Voltage Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current Lead, Halogen and Antimony Free, RoHS Compliant Note 1 "Green" Device (Note 2)
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BAV23
OT143
J-STD-020
BAV23-7
OT143
3000/Tape
DS31756
BAV23 SOT143
BAV23-7
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Untitled
Abstract: No abstract text available
Text: BAV23 Features Mechanical Data • • • • • • • • Fast Switching Speed High Reverse Breakdown Voltage Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current Lead, Halogen and Antimony Free, RoHS Compliant Note 1 "Green" Device (Note 2)
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BAV23
OT143
J-STD-020
BAV23-7
3000/Tape
DS31756
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KT6 marking diode
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAV23/A/C/S Features • • • 350mW Fast Switching Speed Operating and storage junction temperature range -65OC To 150OC
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BAV23/A/C/S
-65OC
150OC
350mW
OT-23
100uA
100ms
KT6 marking diode
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAV23/A/C/S Features 350mW • • Fast Switching Speed Operating and storage junction temperature range -65OC To 150OC
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BAV23/A/C/S
-65OC
150OC
350mW
OT-23
100uA
100ms
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KL31
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAV23/A/C/S Features 350mW • • Fast Switching Speed Operating and storage junction temperature range -65OC To 150OC
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BAV23/A/C/S
-65OC
150OC
350mW
OT-23
100uA
100ms
KL31
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Untitled
Abstract: No abstract text available
Text: BAV23 _ J V_ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAV23 consists of two separate planar epitaxial high-speed diodes in one microminiature plastic envelope intended for surface mounting. The device is designed fo r switching and general applications where high breakdown voltages are
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BAV23
BAV23
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l30 diode smd
Abstract: smd diode L30 sot143 marking code JTp 46E SMD CODE SMD L30 L30 "double diode" DIODE 542 SMD A2 diode smd BAV23 MAM059
Text: Philips Semiconductors Product specification General purpose double diode BAV23 FEA TU R E S D E S C R IP T IO N • Small plastic S M D package The BAV23 consists of two general purpose diodes fabricated in planar technology, and encapsulated in the small plastic S M D S O T 143 package.
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BAV23
BAV23
OT143
MAM059
l30 diode smd
smd diode L30
sot143 marking code JTp
46E SMD CODE
SMD L30
L30 "double diode"
DIODE 542 SMD
A2 diode smd
MAM059
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Untitled
Abstract: No abstract text available
Text: m bbSB'IBl 0024350 65=5 W A P X N AMER PHILIPS/DISCRETE b?E D BAV23 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAV23 consists of two separate planar epitaxial high-speed diodes in one microminiature plastic envelope intended for surface mounting. The device is designed for switching and general applications where high breakdown voltages are
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BAV23
BAV23
100//A
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diodes sy 360
Abstract: diode sy 161
Text: Philips Sem iconductors Product specification General purpose double diode BAV23 PINNING FEATU RES D E S C R IP T IO N • Sm all plastic S M D package The B A V 23 consists of two general purpose diodes fabricated in planar technology, and encapsulated in the
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BAV23
diodes sy 360
diode sy 161
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