Cordless Phone circuit diagram
Abstract: Cordless Phone system block diagram amplifier diagram amplifier transistor application based circuit cordless phone circuit amplifier application circuit power amplifier power amplifier circuit diagram satellite phone system Cordless Phone block diagram
Text: New GaAs Power Amplifier Module UN00541 for Digital Cordless Base Station • Outlines ●The UN00541 is a transmission amplifier using our original GaAs power FETs with high breakdown and low distortion properties, and suitable for base station in digital cordress phone which enlarges service area.
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UN00541
UN00541
D00264AE
Cordless Phone circuit diagram
Cordless Phone system block diagram
amplifier diagram
amplifier transistor application based circuit
cordless phone circuit
amplifier application circuit
power amplifier
power amplifier circuit diagram
satellite phone system
Cordless Phone block diagram
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tdk LAMBDA supply Circuit diagram
Abstract: rectifier module circuit diagram 48vdc circuits 4h35 Nippon Chemi-Con LXV LAMBDA los 28v series Nemic-Lambda GmbH Nippon capacitors tdk lambda power supply
Text: PAH450S Series Compact and high-power DC/DC Power-module The new era for base station transmission amplifiers: Compact and high-power output PAH450S Series Compact and high-power DC/DC Power-module actual size PAH450S Series High efficiency: 92% - top level in the industry
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PAH450S
PAH450S48
PAH350S48)
PAF500F48)
48Vin
semic5000
PAH450S48-0706E
tdk LAMBDA supply Circuit diagram
rectifier module circuit diagram 48vdc circuits
4h35
Nippon Chemi-Con LXV
LAMBDA los 28v series
Nemic-Lambda GmbH
Nippon capacitors
tdk lambda power supply
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AWT1922S11
Abstract: GRM36cog270J50 gsm signal Booster FSF52 4604 mosfet BARNES ENGINEERING LA 20-PB WARTH C695 cdma booster circuit diagram
Text: AWT1922 Application Note Integrated High Power Amplifier for PCS Multi Carrier and Micro Cell Base Station Application Rev. 0 INTRODUCTION This application note describes the use of ANADIGICS AWT1922 IHPA Integrated High Power Amplifier for PCS multi carrier and
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AWT1922
GRM36COG270J50
GRM36X7R103K16
GRM36COG330J50
ATC100A110JW150X
GRM36X7R331K50
AWT1922S11
GRM36cog270J50
gsm signal Booster
FSF52
4604 mosfet
BARNES ENGINEERING
LA 20-PB
WARTH
C695
cdma booster circuit diagram
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ah225-s8g
Abstract: No abstract text available
Text: AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram 400-2700 MHz 15.5 dB Gain @ 2140 MHz
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AH225
AH225
ah225-s8g
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WiMAX transceivers
Abstract: ah225
Text: AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram 400-2700 MHz 15.5 dB Gain @ 2140 MHz
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AH225
AH225
WiMAX transceivers
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Untitled
Abstract: No abstract text available
Text: QHD-2H-0.45G QUAD HYBRID REV: 001, 12/15/04 TECHNICAL DESCRIPTION FEATURES • 380 - 500 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION POWER AMPLIFIERS
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MRF428
Abstract: arco 466 ferroxcube ferrite beads 170 680 pF arco 469 1N4997 2204B ferroxcube 56-590-65 arco 469 332 Ic 8 pin
Text: Order this document by MRF428/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF428 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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MRF428/D
MRF428
MRF428
arco 466
ferroxcube ferrite beads
170 680 pF arco 469
1N4997
2204B
ferroxcube 56-590-65
arco 469
332 Ic 8 pin
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high frequency multiplayer circuit
Abstract: No abstract text available
Text: QHD-2BH-0.45G QUAD HYBRID REV: 003, 12/16/04 TECHNICAL DESCRIPTION FEATURES • 380 - 520 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION POWER AMPLIFIERS
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MRF428
Abstract: No abstract text available
Text: MRF428 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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MRF428
30MHz,
MRF428
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460 MHz radio receiver
Abstract: merrimac Hybrid Couplers MONOLITHIC AMPLIFIERS multicoupler
Text: QHD-2H-0.45G QUAD HYBRID REV: 003, 12/31/07 TECHNICAL DESCRIPTION FEATURES • 380 - 500 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION POWER AMPLIFIERS
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merrimac Hybrid Couplers
Abstract: No abstract text available
Text: QHD-2N-0.56G QUAD HYBRID REV: 003, 06/16/06- TECHNICAL DESCRIPTION FEATURES • 450 - 700 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION POWER AMPLIFIERS
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DSA0044545
Abstract: 3db couplers
Text: QHD-2H-0.45G QUAD HYBRID REV: 002, 04/22/05 TECHNICAL DESCRIPTION FEATURES • 380 - 500 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION POWER AMPLIFIERS
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radar block diagram
Abstract: No abstract text available
Text: CAD, T EST AND M EASUREMENT S UPPLEMENT 100 W HOT SWITCHING PROGRAMMABLE ATTENUATORS n order to test high power amplifiers used in today’s cellular base station equipment it is sometimes necessary to perform automated switching of the high power amplifiers
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GSC247-HYB0460
Abstract: soshin
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC247-HYB0460 460MHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC247-HYB0460 Impedance 50 ohm Nominal Frequency Range 430-490MHz
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GSC247-HYB0460
460MHz
90Deg.
430-490MHz
1000pcs/Reel
GSC247-H.
GSC247-HYB0460
soshin
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QHDZ-2N-0.45G
Abstract: MONOLITHIC AMPLIFIERS 380 transistor base station receiver
Text: QHDZ-2N-0.45G QUAD HYBRID REV: 004, 06/15/06 TECHNICAL DESCRIPTION FEATURES • 380 - 520 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION POWER AMPLIFIERS
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Untitled
Abstract: No abstract text available
Text: MRF428 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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MRF428
30MHz,
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GSC356-HYB2500
Abstract: soshin
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC356-HYB2500 2.5GHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC356-HYB2500 Impedance 50 ohm Nominal Frequency Range 2400-2700MHz
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GSC356-HYB2500
90Deg.
2400-2700MHz
500pcs/Reel
jp/c00
GSC356-H.
GSC356-HYB2500
soshin
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GSC255-HYB2150
Abstract: soshin
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC255-HYB2150 2.15GHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC255-HYB2150 Impedance 50 ohm Nominal Frequency Range 2100-2200MHz
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GSC255-HYB2150
15GHz
90Deg.
2100-2200MHz
1000pcs/Reel
GSC255-H.
GSC255-HYB2150
soshin
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GSC251-HYB1900
Abstract: soshin
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC251-HYB1900 1.9GHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC251-HYB1900 Impedance 50 ohm Nominal Frequency Range 1800-2000MHz
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GSC251-HYB1900
90Deg.
1800-2000MHz
1000pcs/Reel
GSC251-H.
GSC251-HYB1900
soshin
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GSC362
Abstract: soshin GSC362-HYB0900
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC362-HYB0900 800MHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC362-HYB0900 Impedance 50 ohm Nominal Frequency Range 815-960MHz
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GSC362-HYB0900
800MHz
90Deg.
815-960MHz
500pcs/Reel
jp/cg900
GSC362-H.
GSC362
soshin
GSC362-HYB0900
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GSC262-HYB0900
Abstract: GSC262 soshin
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC262-HYB0900 900MHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC262-HYB0900 Impedance 50 ohm Nominal Frequency Range 815-960MHz
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GSC262-HYB0900
900MHz
90Deg.
815-960MHz
1000pcs/Reel
jp/cg900
GSC262-H.
GSC262-HYB0900
GSC262
soshin
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Avantek rf amplifier
Abstract: AWP-900 AVANTEK power amplifier Avantek amplifier AVANTEK AVANTEK awp AVANTEK KS22090 avantek Low Noise Amplifier am KS-22090L1 Avantek UA-152
Text: Cellular Radio: High Power/Low Noise Cellsite Amplifiers AWP-905 Series: Base Station Power Amplifiers AWP-900: Base Station Power Amplifier AWP-900 Features Features • 860-900 MHz • 860-900 MHz • Output power of 45 watts ±1 dB • TTL controlled on/off and power adjust
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AWP-900:
AWP-905
AWP-900
1-800-AVANTEK
Avantek rf amplifier
AVANTEK power amplifier
Avantek amplifier
AVANTEK
AVANTEK awp
AVANTEK KS22090
avantek Low Noise Amplifier am
KS-22090L1
Avantek UA-152
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Untitled
Abstract: No abstract text available
Text: R FM [ i RF2123 MICRODEVICES HIGH POWER AMPLIFIER Typical A pplications • 915M H z ISM Band Applications • Commercial and Consumer Systems • Driver stage for GSM Base Stations • Portable Battery Powered Equipment POWER AMPLIFIERS • Base Station Equipment
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RF2123
RF2123
915MHz
800MHz
950MHz
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PICO base station
Abstract: transistor 386 PIN DIAGRAM signal path designer RF2123
Text: BFB MICRO-DEVICES "•* « - > 1RF2123 HIGH POWER AMPLIFIER Typical Applications • 915 MHz ISM Band Applications Commercial and Consumer Systems • Driver stage for GSM Base Stations Portable Battery Powered Equipment • Base Station Equipment Product Description
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1RF2123
RF2123
915MHz
800MHz
950MHz
PICO base station
transistor 386 PIN DIAGRAM
signal path designer
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