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    BARE DIODE Search Results

    BARE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BARE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Zurich E2

    Abstract: b50c laser diode bar Bookham bookham LASER
    Text: Data sheet 50W 806nm High Power Bare Laser Diode Bar B50C-806-01 Features • Bare 10mm x 1.2mm laser bar • 50W operating power • Highly reliable single quantum well MBE structure • Excellent solderability The Bookham Technology B50C-806-01 bare laser bar


    Original     		PDF 806nm B50C-806-01 B50C-806-01 Zurich E2 b50c laser diode bar Bookham bookham LASER

    B60C-806-01

    Abstract: bookham diode 60W
    Text: Data sheet 60W 806nm High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 60W operating power B60C-806-01 • Highly reliable single quantum well MBE structure The Bookham Technology B60C-806-01 bare laser diode bar series has been designed to provide the


    Original     		PDF 806nm B60C-806-01 B60C-806-01 21CFR bookham diode 60W

    Untitled

    Abstract: No abstract text available
    Text: 120W 9xx nm High Power Bare Laser Diode Bar Features • Bare 10mm x 2.4mm laser diode bar • 120W operating power B120C-9xx-01 • Highly reliable single quantum well MBE structure The Bookham B120C-9xx-01 bare laser diode bar series has been designed to provide the increased brightness


    Original     		PDF B120C-9xx-01 B120C-9xx-01 915nm, 940nm, 980nm 21CFR

    B80C

    Abstract: bare diode bookham diode
    Text: Data sheet 80W 9xx nm High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 80W operating power B80C-9xx-01 • Highly reliable single quantum well MBE structure The Bookham Technology B80C-9xx-01 bare laser diode bar series has been designed to provide the


    Original     		PDF B80C-9xx-01 B80C-9xx-01 915nm, 940nmllustrative 21CFR B80C bare diode bookham diode

    Selector Guide

    Abstract: do-218ab DO218AB
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Bare Die Diodes - A Wide Range of Bare Die and Wafer Form Products Small-Signal and Power Diodes Bare Die Products in Several Versions to Accommodate a Wide Variety of Assembly Techniques and Applications TABLE OF CONTENTS


    Original     		PDF VMN-SG2163-1312 Selector Guide do-218ab DO218AB

    laser diode bar

    Abstract: bookham diode
    Text: Data sheet 40W 806nm 30% Fill Factor High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 30% Fill Factor 150µm emitter / 500µm pitch • 40W operating power B40C-806-01 • Highly reliable single quantum well MBE structure


    Original     		PDF 806nm B40C-806-01 B40C-806-01 B40C806-01 21CFR laser diode bar bookham diode

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits SDRAM Bare Chip ECS2532AACN-A 8M words x 32 bits Features • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS2532AACN-A 133MHz cycles/64ms M01E0107 E0416E50

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits SDRAM Bare Chip ECS2532JECN-A 8M words x 32 bits Features • Density: 256M bits • Organization  2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS2532JECN-A 133MHz cycles/64ms M01E0107 E0698E50

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits SDRAM Bare Chip ECS2532EECN-A 8M words x 32 bits Features • Density: 256M bits • Organization  2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.)


    Original     		PDF ECS2532EECN-A 111MHz cycles/64ms M01E0107 E0697E50

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits SDRAM Bare Chip ECS2532CACN-A 8M words x 32 bits Features • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS2532CACN-A 133MHz cycles/64ms M01E0107 E0551E30

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1216AACN-A 8M words x 16 bits Features • Density: 128M bits • Organization  2M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS1216AACN-A 133MHz cycles/64ms M01E0107 E0572E20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1216AACN-A 8M words x 16 bits Specifications Features • Density: 128M bits • Organization  2M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS1216AACN-A 133MHz cycles/64ms M01E0107 E0572E20

    E0743E20

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 64M bits SDRAM Bare Chip ECS6432AFCN-A 2M words x 32 bits Features • Density: 64M bits • Organization  512K words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS6432AFCN-A 133MHz cycles/64ms M01E0107 E0743E20 E0743E20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1232JCCN-A 4M words x 32 bits Features • Density: 128M bits • Organization  1M words × 32 bits × 4 banks  Package: Bare chip • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS1232JCCN-A 133MHz cycles/64ms M01E0107 E0779E20

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits SDRAM Bare Chip ECS2532CACN-A 8M words x 32 bits Specifications Features • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS2532CACN-A 133MHz cycles/64ms M01E0107 E0551E30

    AX12

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits SDRAM Bare Chip ECS2516ADCN-A 16M words x 16 bits Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS2516ADCN-A 133MHz cycles/64ms M01E0107 E0661E20 AX12

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 64M bits SDRAM Bare Chip ECS6416AHCN-A 4M words x 16 bits Features • Density: 64M bits • Organization  1M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS6416AHCN-A 133MHz cycles/64ms M01E0107 E0742E20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1232ECCN-A 4M words x 32 bits Features • Density: 128M bits • Organization  1M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.)


    Original     		PDF ECS1232ECCN-A 111MHz cycles/64ms M01E0107 E0780E20

    AX12

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits SDRAM Bare Chip ECS2516AFCN-A 16M words x 16 bits Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS2516AFCN-A 133MHz cycles/64ms M01E0107 E0986E20 AX12

    AX12

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits SDRAM Bare Chip ECS2516ADCN-A 16M words x 16 bits Specifications Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)


    Original     		PDF ECS2516ADCN-A 133MHz cycles/64ms M01E0107 E0661E20 AX12

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 128M bits SDRAM Bare Chip ECS1232ABCN-A 4M words x 32 bits Features The ECS1232ABCN is a 128M bits SDRAM organized as 1,048,576 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. This product is Bare Chip.


    Original     		PDF ECS1232ABCN-A ECS1232ABCN 133MHz M01E0107 E0486E30

    AN-1061

    Abstract: Ultrasonic welding circuit centrifuge machine for acceleration epoxy adhesive paste cte table soft solder die bonding ultrasonic flow meter ultrasonic transducer circuit ultrasonic generator ultrasonic bond Ultrasonic Transducer for gas meter
    Text: Application Note AN-1061 Bare Die: Die Attach and Wire Bonding Guidance for setting up assembly processes By Richard Clark Table of Contents Page Introduction .1 Storage and Handling .2


    Original     		PDF AN-1061 AN-1061 Ultrasonic welding circuit centrifuge machine for acceleration epoxy adhesive paste cte table soft solder die bonding ultrasonic flow meter ultrasonic transducer circuit ultrasonic generator ultrasonic bond Ultrasonic Transducer for gas meter

    U-CP-80C0055-preliminary

    Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
    Text: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		PDF U-CP-80C0055-preliminary 808nm 886-3-g U-CP-80C0055-preliminary 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip

    10g DFB

    Abstract: dfb 10g dfb laser 1300 nm bare die DFB 1300 rise time laser diode bare chip DFB laser bare die
    Text: PRELIMINARY DATASHEET | MAY 21, 2004 Uncooled 4 Gb/s CWDM DFB Bare Die The 4 Gb/s CWDM DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include LX4 transceivers, SONET OC-48, and SDH STM-16. Performance Highlights


    Original     		PDF OC-48, STM-16. OC-48 STM-16 10g DFB dfb 10g dfb laser 1300 nm bare die DFB 1300 rise time laser diode bare chip DFB laser bare die