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    BARE DIE MOSFET Search Results

    BARE DIE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    BARE DIE MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN-1060

    Abstract: Silicon Controlled Rectifier Manual an1060 ultrasonic bond Three bond jedec tray bare die JESD 49
    Text: AN-1060 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 ! USA BARE DIE: HANDLING AND STORAGE By Richard Clark Introduction International Rectifier supply a range of power devices in a variety of packages and in Bare Die form. The Bare Die products are available in a


    Original     		AN-1060 AN-1060 Silicon Controlled Rectifier Manual an1060 ultrasonic bond Three bond jedec tray bare die JESD 49 PDF

    Silicon Controlled Rectifier Manual

    Abstract: jedec tray bare die JESD 49 JESD-49 AN-1060 Three bond soft solder die bonder AN1060
    Text: Application Note AN-1060 Bare Die: Handling and Storage By Richard Clark Table of Contents Page Introduction .1 Packing/Carrier Type .1


    Original     		AN-1060 Silicon Controlled Rectifier Manual jedec tray bare die JESD 49 JESD-49 AN-1060 Three bond soft solder die bonder AN1060 PDF

    CLAY31

    Abstract: van allen belt satellite pico electronics transformers airmate CLC452 F100K LM117 LM7171 10195 solar cell national semiconductor 400045
    Text: VOLUME NO. 14 1998 Industry Migrates to Bare Die and Known Good Die – Virtual Packaging Known Good Die I t was just a few years ago that electronics designers who wanted the smallest form factor for system upgrades were limited to assorted surface-mount packages. More recently, this has


    Original     		PDF

    bare Die mosfet

    Abstract: MOSFET Transistors IRL SLD-2083 80021 915 MHz RFID LDMOS SLD-2000 SLD-2083CZ schematic diagram 800 watt power amplifier 50 Watt MOSFET amplifier
    Text: SLD-2000 Product Description 12 Watt Discrete LDMOS FET -Bare Die Sirenza Microdevices’ SLD2000 is a robust 12 Watt, high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD2000 is typically used as a driver or output stage for


    Original     		SLD-2000 SLD2000 2700MHz. 125mA, SLD-2000 AN-039 EDS-104292 bare Die mosfet MOSFET Transistors IRL SLD-2083 80021 915 MHz RFID LDMOS SLD-2083CZ schematic diagram 800 watt power amplifier 50 Watt MOSFET amplifier PDF

    1000 watt mosfet power amplifier

    Abstract: amplifier circuit diagram 1000 watt 80021 SLD-1000 SLD-1083CZ AN-039 1000 watts amplifier schematic diagram with part rf amplifier class a fet mosfet bare Die power mosfet
    Text: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for


    Original     		SLD-1000 SLD-1000 2700MHz. EDS-104291 AN-039 1000 watt mosfet power amplifier amplifier circuit diagram 1000 watt 80021 SLD-1083CZ AN-039 1000 watts amplifier schematic diagram with part rf amplifier class a fet mosfet bare Die power mosfet PDF

    DMOSFET

    Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate


    Original     		CPMF-1200-S160B CPMF-1200-S160B DMOSFET CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC Cree SiC MOSFET SiC POWER MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: S2206 Data Sheet N-channel SiC power MOSFET bare die VDSS 650V RDS on (Typ.) 120mW ID 29A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		S2206 120mW R1102B PDF

    CPMF-1200-S080B

    Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		CPMF-1200-S080B CPMF-1200-S080B DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die PDF

    bare Die mosfet

    Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G


    Original     		CPMF-1200-S080B CPMF-1200-S080B bare Die mosfet DMOSFET CMF20120 ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit PDF

    1000 watt mosfet power amplifier

    Abstract: MOSFET 20 NE 50 Z 80021 SLD-1000 SLD-1083CZ 1000 watts amplifier schematic diagram with part
    Text: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for


    Original     		SLD-1000 SLD-1000 2700MHz. EDS-104291 AN-039 1000 watt mosfet power amplifier MOSFET 20 NE 50 Z 80021 SLD-1083CZ 1000 watts amplifier schematic diagram with part PDF

    Untitled

    Abstract: No abstract text available
    Text: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		S2305 450mW R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: S2301 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 80mW ID 40A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		S2301 R1102B PDF

    CPMF-1200-S160B

    Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		CPMF-1200-S160B CPMF-1200-S160B DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D PDF

    bare Die mosfet

    Abstract: SLD1083 MOSFET 20 NE 50 Z
    Text: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for


    Original     		SLD-1000 2700MHz. SLD-1000 AN-039 EDS-104291 bare Die mosfet SLD1083 MOSFET 20 NE 50 Z PDF

    Untitled

    Abstract: No abstract text available
    Text: S2308 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 280mW ID 14A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		S2308 280mW R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7130-NCx Power MOSFET Die Datasheet January, 2014 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  100Vbreakdown voltage  22 A current rating  0.05RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		RAD7130-NCx 100Vbreakdown -55oC 125oC PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7164-NCx Power MOSFET Die Data Sheet January, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  150Vbreakdown voltage  35 A current rating  0.024RDS on Aeroflex RAD’s RAD7164-NCx Power MOSFET Die are available now for RadHard applications. Using proven


    Original     		RAD7164-NCx 150Vbreakdown 024RDS 150nC -55oC 125oC MIL-STD750 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7130-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  100Vbreakdown voltage  22 A current rating  0.05RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		RAD7130-NCx 100Vbreakdown 05RDS -55oC 125oC MIL-STD750 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7234-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  250Vbreakdown voltage  12 A current rating  0.20RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		RAD7234-NCx 250Vbreakdown 20RDS 150nC -55oC 125oC MIL-STD750 PDF

    bare Die Si mosfet

    Abstract: bare Die mosfet FORWARD23
    Text: Standard Products RAD7130-NFx Power MOSFET Datasheet October, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  100V breakdown voltage  22 A current rating  0.08RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		RAD7130-NFx 08RDS -55oC 125oC MIL-STD750 bare Die Si mosfet bare Die mosfet FORWARD23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7230-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  200Vbreakdown voltage  12 A current rating  0.22RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		RAD7230-NCx 200Vbreakdown 22RDS 160nC -55oC 125oC MIL-STD750 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7130-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  100Vbreakdown voltage  22 A current rating  0.05RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		RAD7130-NCx 100Vbreakdown 05RDS -55oC 125oC MIL-STD750 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7230-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  200Vbreakdown voltage  12 A current rating  0.22RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		RAD7230-NCx 200Vbreakdown 22RDS 160nC -55oC 125oC MIL-STD750 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7214-NCx Power MOSFET Die Data Sheet September, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  250Vbreakdown voltage  2.5 A current rating  1.2RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		RAD7214-NCx 250Vbreakdown -55oC 125oC MIL-STD750 PDF