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    BARE CHIP MOSFET Search Results

    BARE CHIP MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    BARE CHIP MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS 3PowerMOSTransistorChip IPC218N04N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC218N04N3 1Description PowerMOSTransistorChip


    Original     		PDF IPC218N04N3 IPB011N04N

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AEC-QUALIFIED Overview of AEC-Qualified Products AEC-QUALIFIED PRODUCTS DISCRETE SEMICONDUCTORS • • • • • • • • • • ESD Protection Devices FRED PT , HEXFRED MOSFETs Optoelectronics Rectifiers


    Original     		PDF NTCAFLEX05 VMN-MS6323-1505

    IRFP2907

    Abstract: bare Die mosfet IRFP2907 Application Notes IRFC2907B
    Text: PD - 93777 IRFC2907B HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack* l Ultra Low On-Resistance Electrical Characteristics * D l Parameter V BR DSS RDS(on)* VGS(th) IDSS IGSS


    Original     		PDF IRFC2907B 200nA IRFP2907 bare Die mosfet IRFP2907 Application Notes IRFC2907B

    n06hd

    Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
    Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and


    Original     		PDF TND310 TND310/D n06hd N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Alternative Energy Energy Exploration One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy Energy Exploration Oil Prospecting 4 Mining 5 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		PDF VMN-MS6761-1212

    STK621-051

    Abstract: STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk621 stk611-031
    Text: Ordering number: EP35E Combining Power and Control, Sanyo Inverter Power IC Enables Easy Realization of Power Saving for Equipment To what extent can electrical equipment become environmentally friendly? One of the answers is power-saving and low-consumption power technology. Inverter technology


    Original     		PDF EP35E 15-C2, STK621-051 STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk621 stk611-031

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Alternative Energy Energy Exploration One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy エネルギー探査 油層探鉱 4 採鉱 5 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		PDF VMN-MS6792-1304-AEEE

    bi-directional switches FET

    Abstract: bare Die mosfet Bi-Directional P-Channel mosfet R-THETA Bi-Directional P-Channel list of P channel power mosfet so8 footprint bare chip mosfet Power MOSFET Wafer
    Text: Flip Chip Power MOSFET: A New Wafer Scale Packaging Technique Aram Arzumanyan, Ritu Sodhi, Dan Kinzer, Hazel Schofield, Tim Sammon International Rectifier Corporation, El Segundo, CA 90245 USA As presented at ISPSD, June 2001 Abstract This paper describes the first flip chip power MOSFET


    Original     		PDF ISPSD-99 bi-directional switches FET bare Die mosfet Bi-Directional P-Channel mosfet R-THETA Bi-Directional P-Channel list of P channel power mosfet so8 footprint bare chip mosfet Power MOSFET Wafer

    autofocus IC

    Abstract: scl 4445 A3904 A3904ECGTR A3904ECW A3904EEWTR-P IPC7351 JESD51-5 MO-229
    Text: A3904 Low Voltage Voice Coil Motor Driver Features and Benefits Description ▪ Fixed I2C logic thresholds ▪ 8-bit D-to-A converter ▪ 500 A resolution ▪ Low voltage I2C serial interface ▪ Low current-draw sleep mode ▪ 2.4 to 5.5 V operation ▪ 2 mm x 1.5 mm, 0.38 mm nominal overall height DFN


    Original     		PDF A3904 A3904 autofocus IC scl 4445 A3904ECGTR A3904ECW A3904EEWTR-P IPC7351 JESD51-5 MO-229

    TMK063CH

    Abstract: JMK107BJ106KG VSON010V3030 LMK212BJ106M bd96
    Text: Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up Switching Regulator with Built-in Power MOSFET BD9641NUV No.09027EAT27 ●Description BD9641NUV is synchronous rectification 1ch boost Switching converter built in Power MOS FET. Input voltage is 2.5V～5.5V.


    Original     		PDF BD9641NUV 09027EAT27 BD9641NUV 900kHz. R0039A TMK063CH JMK107BJ106KG VSON010V3030 LMK212BJ106M bd96

    transistor SMD MOSFET 2033

    Abstract: No abstract text available
    Text: PCF8883 Capacitive touch/proximity switch with auto-calibration, large voltage operating range, and very low power consumption Rev. 4 — 17 March 2014 Product data sheet 1. General description The integrated circuit PCF8883 is a capacitive touch and proximity switch that uses a


    Original     		PDF PCF8883 PCF8883 transistor SMD MOSFET 2033

    Untitled

    Abstract: No abstract text available
    Text: PCF8883 Capacitive touch/proximity switch with auto-calibration, large voltage operating range, and very low power consumption Rev. 3 — 23 April 2013 Product data sheet 1. General description The integrated circuit PCF8883 is a capacitive touch and proximity switch that uses a


    Original     		PDF PCF8883 PCF8883

    A3904

    Abstract: A3904ECGTR A3904ECW A3904EEWTR-P IPC7351 JESD51-5 MO-229 CG WLCSP 30 v dac i2c scl 4445
    Text: A3904 Low Voltage Voice Coil Motor Driver Features and Benefits Description ▪ Fixed I2C logic thresholds ▪ 8-bit D-to-A converter ▪ 500 A resolution ▪ Low voltage I2C serial interface ▪ Low current-draw sleep mode ▪ 2.4 to 5.5 V operation ▪ 2 mm x 1.5 mm, 0.38 mm nominal overall height DFN


    Original     		PDF A3904 A3904 A3904ECGTR A3904ECW A3904EEWTR-P IPC7351 JESD51-5 MO-229 CG WLCSP 30 v dac i2c scl 4445

    3904D

    Abstract: c 2437 power mosfet data MO-229X2BCD
    Text: A3904 Low Voltage Voice Coil Motor Driver Features and Benefits Description ▪ Fixed I2C logic thresholds ▪ 8-bit D-to-A converter ▪ 500 A resolution ▪ Low voltage I2C serial interface ▪ Low current-draw sleep mode ▪ 2.4 to 5.5 V operation ▪ 2 mm x 1.5 mm, 0.38 mm nominal overall height DFN


    Original     		PDF A3904 3904D c 2437 power mosfet data MO-229X2BCD

    sum45n25

    Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
    Text: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)


    Original     		PDF VMN-SG2117-0705 sum45n25 PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08

    mosfet base induction heat circuit

    Abstract: mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator Cree SiC MOSFET SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron
    Text: High Heat Flux Applications in Power Electronics Scott G. Leslie Chief Technologist Powerex Inc Youngwood PA High Heat Flux Applications in Power Electronics 2005 1 Power Switching Capacity VA Power Semiconductor Device Power Switching Capacity & Application Map


    Original     		PDF

    CLAY31

    Abstract: van allen belt satellite pico electronics transformers airmate CLC452 F100K LM117 LM7171 10195 solar cell national semiconductor 400045
    Text: VOLUME NO. 14 1998 Industry Migrates to Bare Die and Known Good Die – Virtual Packaging Known Good Die I t was just a few years ago that electronics designers who wanted the smallest form factor for system upgrades were limited to assorted surface-mount packages. More recently, this has


    Original     		PDF

    DG9454

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. SUPER 12 Featured Products version 3.0 www.vishay.com/landingpage/super12/ver3 S12 Super 12 Featured Products 146 CTI SMD Chip Polarized Aluminum Capacitor High temperature up to + 125 °C , low impedance (down to 35 mΩ), AEC-Q200 qualified


    Original     		PDF com/landingpage/super12/ver3 AEC-Q200 SiR662DP -6767GZ-51 VMN-MS6559-1102 DG9454

    smd code s408

    Abstract: ESCC 4001/026 PERKINELMER FLASH TUBE trigger module perkin perkin H20-060-24 solder wire SN97AG3 ic s408 smd NTC 15D PHR0603
    Text: VISHAY IN T ER T ECHN O L O G Y , INC . INTERACTIVE data book thin film products vishay sfernice vse-db0096-0711 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0096-0711 smd code s408 ESCC 4001/026 PERKINELMER FLASH TUBE trigger module perkin perkin H20-060-24 solder wire SN97AG3 ic s408 smd NTC 15D PHR0603

    CPMF-1200-S080B

    Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		PDF CPMF-1200-S080B CPMF-1200-S080B DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die

    CPMF-1200-S160B

    Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		PDF CPMF-1200-S160B CPMF-1200-S160B DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D

    Ultrasonic cleaner circuit diagram

    Abstract: construction of "ultrasonic cleaner"
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27G0021-0100/Rev Ultrasonic cleaner circuit diagram construction of "ultrasonic cleaner"

    bare Die mosfet

    Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G


    Original     		PDF CPMF-1200-S080B CPMF-1200-S080B bare Die mosfet DMOSFET CMF20120 ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit

    DMOSFET

    Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate


    Original     		PDF CPMF-1200-S160B CPMF-1200-S160B DMOSFET CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC Cree SiC MOSFET SiC POWER MOSFET