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    Panasonic Electronic Components SF4B-A48G(V2)

    LIGHT CURTAIN ARM/FOOT 45MM
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    DigiKey SF4B-A48G(V2) Box
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    RS SF4B-A48G(V2) Bulk 1
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    Panasonic Electronic Components SF4B-A48G<V2>

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    Master Electronics SF4B-A48G<V2>
    • 1 $3594.77
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    BA48G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8355F

    Abstract: 130C JESD22
    Text: Cypress Semiconductor Package Qualification Report QTP# 99331 VERSION 2.0 December, 2000 48 Lead Fine Pitch Ball Grid Array FBGA 7mm x 8.5mm ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Kim-Ngan Nguyen


    Original     		PDF BA48G 48-ball O925255 CY62146VLL-BAIB 150C/-55) 8355F 130C JESD22

    BA36B

    Abstract: fBGA 80 package
    Text: Package Diagrams Ball Grid Array Packages 36-Ball Thin BGA BA36A 51-85099-B 1 Package Diagrams 36-Ball 7.00 mm x 8.5 mm x 1.2 mm Thin BGA BA36B 51-85105-*C 2 Package Diagrams 42-Ball FBGA (7.0 x 5.0 x 1.2 mm) BA42 51-85139-*C 3 Package Diagrams 48-Ball (8.0 x 14.0 x 1.1 mm) Thin BGA BA47


    Original     		PDF 36-Ball BA36A 51-85099-B 36-Ball BA36B 42-Ball 48-Ball BA48A 51-85096-D BA36B fBGA 80 package

    CY7C1069AV33

    Abstract: CY7C1069AV33-10ZI CY7C1069AV33-10BAC CY7C1069AV33-10BAI CY7C1069AV33-10ZC CY7C1069AV33-12BAC CY7C1069AV33-12BAI CY7C1069AV33-12ZC CY7C1069AV33-12ZI
    Text: CY7C1069AV33 PRELIMINARY 2M x 8 Static RAM Features device is accomplished by enabling the chip by taking CE1 LOW and CE2 HIGH and Write Enable (WE) inputs LOW. • High speed — tAA = 10 ns • Low active power — 180 mW (max.) • Operating voltages of 3.3 ±0.3V


    Original     		PDF CY7C1069AV33 CY7C1069AV33 CY7C1069AV33-10ZI CY7C1069AV33-10BAC CY7C1069AV33-10BAI CY7C1069AV33-10ZC CY7C1069AV33-12BAC CY7C1069AV33-12BAI CY7C1069AV33-12ZC CY7C1069AV33-12ZI

    CY7C1061AV25

    Abstract: CY7C1061AV25-8ZC CY7C1061AV25-8ZI CY7C1061A CY7C1061AV25-10BAI
    Text: CY7C1061AV25 PRELIMINARY 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).


    Original     		PDF CY7C1061AV25 I/O15) CY7C1061AV25 CY7C1061AV25-8ZC CY7C1061AV25-8ZI CY7C1061A CY7C1061AV25-10BAI

    CY7C1061

    Abstract: CY7C1061AV33 CY7C1061AV33-8ZC CY7C1061AV33-8ZI CY7C1061AV33-8BAI CY7C1061AV33-12ZI
    Text: CY7C1061AV33 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). • High speed


    Original     		PDF CY7C1061AV33 I/O15) 15-ns 10-ns 48BGA pF/10 54-pin CY7C1061 CY7C1061AV33 CY7C1061AV33-8ZC CY7C1061AV33-8ZI CY7C1061AV33-8BAI CY7C1061AV33-12ZI

    CY7C1061

    Abstract: CY7C1061AV25 CY7C1061AV25-8ZC CY7C1061AV25-8ZI
    Text: CY7C1061AV25 PRELIMINARY 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).


    Original     		PDF CY7C1061AV25 I/O15) CY7C1061AV25 CY7C1061 CY7C1061AV25-8ZC CY7C1061AV25-8ZI

    CY7C1061AV

    Abstract: CY7C1061AV33-10ZI CY7C1061AV33-12BAI
    Text: CY7C1061AV33 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). • High speed


    Original     		PDF CY7C1061AV33 I/O15) 61AV33 48BGA pF/10 54-pin CY7C1061AV CY7C1061AV33-10ZI CY7C1061AV33-12BAI

    cy7c1069av33-10zc

    Abstract: CY7C1069AV33
    Text: CY7C1069AV33 2M x 8 Static RAM Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW max. • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs


    Original     		PDF CY7C1069AV33 CY7C1069AV33 15-ns 10-ns 48BGA pf/10 54-pin cy7c1069av33-10zc

    CY7C1069AV33-10ZI

    Abstract: CY7C1069AV33 CY7C1069AV33-10BAC CY7C1069AV33-10BAI CY7C1069AV33-10ZC CY7C1069AV33-8BAC CY7C1069AV33-8BAI CY7C1069AV33-8ZC CY7C1069AV33-8ZI BA48G
    Text: CY7C1069AV33 2M x 8 Static RAM Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW max. • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs


    Original     		PDF CY7C1069AV33 CY7C1069AV33 15-ns 10-ns 48BGA pf/10 54-pin 48fBGA CY7C1069AV33-10ZI CY7C1069AV33-10BAC CY7C1069AV33-10BAI CY7C1069AV33-10ZC CY7C1069AV33-8BAC CY7C1069AV33-8BAI CY7C1069AV33-8ZC CY7C1069AV33-8ZI BA48G

    Untitled

    Abstract: No abstract text available
    Text: CY7C1061AV33 PRELIMINARY 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).


    Original     		PDF CY7C1061AV33 I/O15) CY7C1061AV33

    CY7C1069AV33

    Abstract: No abstract text available
    Text: CY7C1069AV33 PRELIMINARY 2M x 8 Static RAM Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW max. • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs


    Original     		PDF CY7C1069AV33 CY7C1069AV33

    CY7C1061AV33-10ZI

    Abstract: CY7C1061 CY7C1061AV33 CY7C1061AV33-10ZC CY7C1061A
    Text: PRELIMINARY CY7C1061AV33 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).


    Original     		PDF CY7C1061AV33 I/O15) CY7C1061AV33 CY7C1061AV33-10ZI CY7C1061 CY7C1061AV33-10ZC CY7C1061A