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    BA 7321 Price and Stock

    Vishay Intertechnologies MBA02040C7321FRP00

    Metal Film Resistors - Through Hole .4watt 7.32Kohms 1% 1/8watt body size
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    Mouser Electronics MBA02040C7321FRP00 8,217
    • 1 $0.39
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    • 100 $0.115
    • 1000 $0.056
    • 10000 $0.045
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    Vishay Intertechnologies MBA0204BC7321FCT00

    Metal Film Resistors - Through Hole MBA/SMA 0204-50 1% KL CT 7K32
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    Mouser Electronics MBA0204BC7321FCT00
    • 1 $0.35
    • 10 $0.298
    • 100 $0.116
    • 1000 $0.048
    • 10000 $0.039
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    Vishay Intertechnologies MBA02040C7321FCT00

    Metal Film Resistors - Through Hole MBA/SMA 0204-50 1% CT 7K32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MBA02040C7321FCT00
    • 1 $0.35
    • 10 $0.298
    • 100 $0.116
    • 1000 $0.048
    • 10000 $0.039
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    Vishay Intertechnologies MBA0204VC7321FCT00

    Metal Film Resistors - Through Hole MBA/SMA 0204-50 1% CECC 06 CT 7K32
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    Mouser Electronics MBA0204VC7321FCT00
    • 1 $0.36
    • 10 $0.263
    • 100 $0.105
    • 1000 $0.051
    • 10000 $0.041
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    Vishay Intertechnologies MBA0204BC7321FC100

    Metal Film Resistors - Through Hole MBA/SMA 0204-50 1% KL C1 7K32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MBA0204BC7321FC100
    • 1 $0.64
    • 10 $0.474
    • 100 $0.276
    • 1000 $0.155
    • 10000 $0.141
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    BA 7321 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A13B1

    Abstract: No abstract text available
    Text: 1 1234455678 96ABCADEFCC1C3C66C 1 131C7BA1C C C C C C C 13C9A1C 1 CDE33AAF1116511C11551 !61"F#$11#%71 1 #&11&11C12&6!'&1 ' !1!155(1&&11 !51 !61'51!*11)!571#&51C1! 137E+,11(151'51 1


    Original     		PDF 96ABCADEF CDE33AAF 137-E+ 01C3B2 1399F+ A13B1

    DP3SZ128512X16NY5

    Abstract: SA10 SA11 SA12 SA13 Dense-Pac Microsystems
    Text: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of


    Original     		PDF 30A193-00 DP3SZ128512X16NY5 DP3SZ128512X16NY5 128Kx16 512Kx16 SA10 SA11 SA12 SA13 Dense-Pac Microsystems

    D0000H-DFFFFH

    Abstract: No abstract text available
    Text: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of


    Original     		PDF 30A193-00 DP3SZ128512X16NY5 DP3SZ128512X16NY5 128Kx16 512Kx16 D0000H-DFFFFH

    IRF7521D1

    Abstract: ba 7321
    Text: PD- 91646B IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A


    Original     		PDF 91646B IRF7521D1 forward-481 IRF7521D1 ba 7321

    IRF7506

    Abstract: marking code EA SMD MOSFET
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching


    Original     		PDF 1268D IRF7506 IA-481 IRF7506 marking code EA SMD MOSFET

    IRF7524D1

    Abstract: No abstract text available
    Text: PD -91648B IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V


    Original     		PDF -91648B IRF7524D1 forward-481 IRF7524D1

    IRF7506

    Abstract: No abstract text available
    Text: PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2


    Original     		PDF 1268D IRF7506 IA-481 IRF7506

    IRF7311

    Abstract: IRF7101 DIODE smd marking 82a
    Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1435 IRF7311 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description


    Original     		PDF IRF7311 IRF7311 IRF7101 DIODE smd marking 82a

    IRF7101

    Abstract: IRF7421D1 diode schottky 117c
    Text: PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode 1 8 2 7 3 6 4 5 A A D VDSS = 30V D


    Original     		PDF IRF7421D1 IRF7101 IRF7421D1 diode schottky 117c

    diode schottky 117c

    Abstract: IRF7101 IRF7421D1
    Text: Previous Datasheet Index Next Data Sheet PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode


    Original     		PDF IRF7421D1 diode schottky 117c IRF7101 IRF7421D1

    DB95

    Abstract: No abstract text available
    Text: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 A123456789AABCDCEFCAFBAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A A CA5E 3CD1AEA89 F !"#$%A89A&' 5 *A'BA1EEA !"ACCDCB A(+63&,6A(&+A A


    Original     		PDF 123456789AABCDCEF 1234567891231324567189A15BC7DE9618BFD 93731A EDB41 12A31 189AAB 1D76F FD27A 1BE12 F66F3 DB95

    IRF7501

    Abstract: No abstract text available
    Text: PD - 91265H IRF7501 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2


    Original     		PDF 91265H IRF7501 IRF7501

    ir*526

    Abstract: HEXFET SO-8 IRF7526D1
    Text: PD -91649B IRF7526D1 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -30V


    Original     		PDF -91649B IRF7526D1 forwar-481 ir*526 HEXFET SO-8 IRF7526D1

    IRF7504

    Abstract: rce marking
    Text: PD - 9.1267G IRF7504 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2 VDSS = -20V


    Original     		PDF 1267G IRF7504 IRF7504 rce marking

    73001AB

    Abstract: rtt 10 foxboro foxboro 931 foxboro control valve drum ic cxa 2165 sis 486 LK15 75XXX-XX cdb 4121 e
    Text: 73001BA-02 FOX 1 Hardware System Overview and Reference Manual VOLUME 2 COMPUTER REFERENCE MANUAL tOXBORO FOX 1 USER DOCUMENTATION 73001AA 73001AB 73001EA 73001EB 73001EC 73001 BA-02 Hardware System Overview and Reference Manual VOLUME 2 COMPUTER REFERENCE MANUAL


    OCR Scan     		PDF 73001BA- 73001AA 73001AB 73001BA-2 rtt 10 foxboro foxboro 931 foxboro control valve drum ic cxa 2165 sis 486 LK15 75XXX-XX cdb 4121 e

    Untitled

    Abstract: No abstract text available
    Text: FAST CMOS OCTAL REGISTER TRANSCEIVER WITH PARITY Integrated Device Technology, Inc* FEATURES PRELIMINARY IDT73210/A/B IDT73211/A/B 73210/211 Single-level pipeline register from Port A to Port B 73210 Two level pipeline register from Port B to Port A 73211 Single level pipeline register from Port B to Port A


    OCR Scan     		PDF IDT73210/A/B IDT73211/A/B IL-STD-883, 32-pin IDT73210 MASS771 IDT73210/A/B, IDT73211/A/B MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 MICROSYSTEMS A D V A N C ED INFO RM ATIO N D E S C R IP T IO N : PIN -O U T DIAGRAM The D P3SZ12851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry new m em ory subsystem using D ense-P ac M ic ro s y s te m s ’ TSO P s ta c k in g


    OCR Scan     		PDF DP3SZ128512X16NY5 P3SZ12851 30A193-00

    8a12

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION D ESC R IPT IO N : T h e D P 3 S Z 1 2851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry n e w m em o ry subsystem using D e n s e - P a c M ic r o s y s t e m s ' T S O P s ta c k in g


    OCR Scan     		PDF 28512X16N 128Kx16 512Kx16 8a12

    TBA 931

    Abstract: me 555 DP3SZ128512X16NY5 SA10 A1020A-2 sa2011 sa2111
    Text: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH D P3SZ12 8 5 1 2 X 1 6N Y 5 MICROSYSTEMS A D VA N C ED IN FO R M A TIO N D E S C R IP T IO N : P IN -O U T D IA G R A M The D P3SZ12851 2X1 6N Y 5 m o d u le s are a re vo lu tio n a ry new m em ory subsystem using


    OCR Scan     		PDF DP3SZ128512X16NY5 DP3SZ128512X16NY5 128Kx16 512Kx16 30A193-00 TBA 931 me 555 SA10 A1020A-2 sa2011 sa2111

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 256 Megabit CMOS DRAM w/ Parity DPD8MX36RKY5 VI i C R O S Y S I’ K M s PRELIMINARY DESCRIPTION: The DPD8MX36RKY5 is the 8 Meg x 36 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 4 Meg x 16 and


    OCR Scan     		PDF DPD8MX36RKY5 DPD8MX36RKY5 50ri5 30A165-26

    73216-0870

    Abstract: No abstract text available
    Text: 13 12 10 17.45 1A M A T E R IA L S A N D FIN IS H E S D E C B O D Y: S T A IN L E S S S T E E L PLATED GOLD C O N T A C T : B E R Y L LIU M C O PPER PLATED GOLD IN S U L A T O R : T E F L O N P R E S S RING: B R A S S PLATED GOLD. 3.18 REF 0 ^ 2 5 REF 4 PLACES


    OCR Scan     		PDF SD-73216-087 73216-0870

    dpsd3

    Abstract: No abstract text available
    Text: DENSE-PAC / H - 'D éhshs M I C R O S Y S T Ii M S 128 Megabit Synchronous DRAM DPSD32MX4RY5 High Density Memory Device DESCRIPTION: The /H -D tttsus series is a family of interchangeable memory modules. The 128 Megabit SD R A M is a member of this family which utilizes the new and innovative space


    OCR Scan     		PDF DPSD32MX4RY5 DPSD32MX4RY5 100MHz) 83MHz) dpsd3

    smd diode S6 66a

    Abstract: REGULATOR SMD MARKING CODE ASC
    Text: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching


    OCR Scan     		PDF 1269E IRF7507 A135OE smd diode S6 66a REGULATOR SMD MARKING CODE ASC

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 1024 Megabit CMOS DRAM DP3ED32MX32RW VI i ' R O S Y S I H M S PRELIMINARY DESCRIPTION: The DP3ED32MX32RW is the 32 Meg x 32 Dynamic RAM module in the family of modules that utilize the space saving TSOP technology. The module is constructed of sixteen 16M x 4 dynamic RAM surface mounted on an industry standard 72-pin


    OCR Scan     		PDF DP3ED32MX32RW DP3ED32MX32RW 72-pin 30A174-00