BA 508 IC Search Results

BA 508 IC Result Highlights (5)

Part	Manufacturer	Description
D1U74T-W-1600-12-HB4AC	Murata Manufacturing Co Ltd	AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs
D1U54T-M-2500-12-HB4C	Murata Manufacturing Co Ltd	2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR
MHM411-21	Murata Manufacturing Co Ltd	Ionizer Module, 100-120VAC-input, Negative Ion
SCL3400-D01-1	Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
SCC433T-K03-004	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor

BA 508 IC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
WED9LAPC2B16P8BC Abstract: WED9LAPC2C16V4BC WED9LAPC2C16V4BI Text: WED9LAPC2C16V4BC 512K x 32 SSRAM / 512K x 64 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller F E AT U R E S DESCRIPTION n Clock speeds: SSRAM: 100 MHz SDRAM: 100 MHz The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous DRAM array	Original	WED9LAPC2C16V4BC LUCTAPC640 WED9LAPC2C16V4BC WED9LAPC2B16P8BC, WED9LAPC2C16V4BI WED9LAPC2B16P8BC WED9LAPC2C16V4BI	PDF
Untitled Abstract: No abstract text available Text: WED9LAPC2C16V4BC 512K x 32 SSRAM / 512K x 64 SDRAM External Memory Solution for Lucents LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION n Clock speeds: SSRAM: 100 MHz SDRAM: 100 MHz The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous DRAM array	Original	WED9LAPC2C16V4BC LUCTAPC640s LUCTAPC640 WED9LAPC2C16V4BC WED9LAPC2C16V4BI	PDF
BA 508 Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC WED9LAPC3C16V8BI Text: WED9LAPC3C16V8BC 512K x 32 SSR AM / 1M x 64 SDR AM SSRAM SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT ’S LUCT APC640 A TM PORT CONTROLLER LUCENT’S LUCTAPC640 ATM FEATURES DESCRIPTION n Clock speeds: The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous DRAM array packaged in a 21mm x 21mm 192 lead BGA.	Original	WED9LAPC3C16V8BC LUCTAPC640 WED9LAPC3C16V8BC LUCTAPC640 WED9LAPC2B16P8BC, WED9LAPC3C16V8BI BA 508 WED9LAPC2B16P8BC WED9LAPC3C16V8BI	PDF
WED9LAPC2C16V8BC Abstract: WED9LAPC2C16V8BI Text: WED9LAPC2C16V8BC 512K x 32 SSR AM / 1M x 64 SDR AM SSRAM SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT ’S LUCT APC640 A TM PORT CONTROLLER LUCENT’S LUCTAPC640 ATM FEATURES DESCRIPTION n Clock speeds: The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous DRAM	Original	WED9LAPC2C16V8BC LUCTAPC640 WED9LAPC2C16V8BC LUCTAPC640 APC2B16P8BC, WED9LAPC2C16V8BI WED9LAPC2C16V8BI	PDF
WED3DL644V Abstract: apa0 Text: WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION n n n n n n The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm by 22mm, BGA.	Original	WED3DL644V 4Mx64 WED3DL644V 4x1Mx64. 4Mx16 100MHz 133MHz, 125MHz apa0	PDF
Untitled Abstract: No abstract text available Text: WED416S16030C 4M x 16 Bits x 4 Banks Synchronous DRAM PRELIMINARY* FEATURES DESCRIPTION n Single 3.3V power supply The WED416S16030C is 268,435,456 bits of synchronous high data rate DRAM organized as 4 x 4,196,304 words x 16 bits. Synchronous design allows precise	Original	WED416S16030C 100MHz WED416S16030C WED416S16030C7SI WED416S16030C75SI WED416S16030C8SI WED416S16030C10SI 133MHz	PDF
TAPC640 Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC Text: WED9LAPC2B16P8BC 4M x 32 SDR AM / 2M x 8 SDR AM SDRAM SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TTAPC640 APC640 A TM PORT CONTROLLER ATM DESCRIPTION FEATURES n Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in	Original	WED9LAPC2B16P8BC TAPC640 WED9LAPC2B16P8BC WED9LAPC2C16V4BC, APC2B16P8BC WED9LAPC2C16V4BC	PDF
Untitled Abstract: No abstract text available Text: WED9LC6416V 128Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous	Original	WED9LC6416V 128Kx32 SSRAM/4Mx32 TMS320C6201 TMS320C6701 MO-163 TMS320C6000 WED9LC6416VxxBC 4Mx32 4Mx16	PDF
Electronic Designs Abstract: WHITE ELECTRONIC DESIGNS WED3DL644V Text: WED3DL644V White Electronic Designs 4Mx64 SDRAM FEATURES DESCRIPTION n n n n n n The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm	Original	WED3DL644V 4Mx64 WED3DL644V 4x1Mx64. 4Mx16 100MHz 133MHz, 125MHz Electronic Designs WHITE ELECTRONIC DESIGNS	PDF
EDI9LC644V Abstract: TMS320C6000 TMS320C6201 TMS320C6701 Text: EDI9LC644V EDI9LC644AV 128Kx32 SSRAM/1Mx32 SDRAM External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The EDI9LC644VxxBC is a 3.3V, 128K x 32 Synchronous Pipeline	Original	EDI9LC644V EDI9LC644AV 128Kx32 SSRAM/1Mx32 TMS320C6000 EDI9LC644VxxBC 1Mx32 1Mx16 TMS320C6201 EDI9LC644V TMS320C6201 TMS320C6701	PDF
Untitled Abstract: No abstract text available Text: WED9LAPC3C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENTS LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION n Clock speeds: The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous DRAM array packaged in a 21mm x 21mm 192 lead BGA.	Original	WED9LAPC3C16V8BC LUCTAPC640 WED9LAPC3C16V8BC WED9LAPC2B16P8BC, WED9LAPC3C16V8BI	PDF
Untitled Abstract: No abstract text available Text: WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SDRAM: 100 MHz The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in a	Original	WED9LAPC2B16P8BC LUCTAPC640 WED9LAPC2B16P8BC WED9LAPC2B16P8BI	PDF
WED9LAPC2B16P8BC Abstract: WED9LAPC2C16V4BC Text: WED9LAPC2C16V4BC 512K x 32 SSRAM / 512K x 64 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SSRAM: 100 MHz • SDRAM: 100 MHz The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous DRAM array	Original	WED9LAPC2C16V4BC LUCTAPC640 WED9LAPC2C16V4BC WED9LAPC2B16P8BC, WED9LAPC2C16V4BI WED9LAPC2B16P8BC	PDF
ED07 Abstract: ED16-23 TMS320C671 Text: WED3DL328V 8Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and	Original	WED3DL328V 8Mx32 WED3DL328V 4x1Mx32. 8Mx16 TMS320C6000 TMS320C, C6211 ED07 ED16-23 TMS320C671	PDF

ED16-23 Abstract: TMS320C TMS320C6000 WED3DL328V Text: WED3DL328V 8Mx32 SDRAM PRELIMINARY FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and	Original	WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 TMS320C6000 TMS320C, C6211 ED16-23 TMS320C	PDF
EDI416S4030A Abstract: No abstract text available Text: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,	Original	EDI416S4030A EDI416S4030A 83MHz 100MHz) 83MHz) len471) EDI416S4030A10SI 1Mx16bitsx4banks 100MHz EDI416S4030A12SI	PDF
WED416S8030A Abstract: No abstract text available Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,	Original	WED416S8030A WED416S8030A 83MHz 100MHz) 83MHz) lengt471) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI	PDF
TMS320C6000 Abstract: TMS320C6201 TMS320C6701 WED9LC6816V 4Mx32 BGA Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline	Original	WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6201 TMS320C6701 4Mx32 BGA	PDF
TMS320C6000 Abstract: TMS320C6201 TMS320C6701 WED9LC6416V Text: WED9LC6416V 128Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous	Original	WED9LC6416V 128Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6416VxxBC 4Mx32 4Mx16 TMS320C6201 TMS320C6201 TMS320C6701 WED9LC6416V	PDF
TMS320C6000 Abstract: TMS320C6201 TMS320C6701 WED9LC6416V Text: WED9LC6416V White Electronic Designs 128Kx32 SSRAM/4Mx32 SDRAM EXTERNAL MEMORY SOLUTION FOR TEXAS INSTRUMENTS TMS320C6000 DSP FEATURES DESCRIPTION n The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous Pipeline SRAM and a 4M x 32 Synchronous DRAM array constructed with one 128K x 32 SSRAM and two 4M x 16	Original	WED9LC6416V 128Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6416VxxBC TMS320C6201 TMS320C6701 TMS320C6201 TMS320C6701 WED9LC6416V	PDF
SDA10 Abstract: No abstract text available Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline	Original	WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6201 TMS320C6701 MO-163 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 SDA10	PDF
Untitled Abstract: No abstract text available Text: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,	Original	EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks 100MHz	PDF
Untitled Abstract: No abstract text available Text: WED416S16030A White Electronic Designs 4M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S16030A is 268,435,456 bits of synchronous high data rate DRAM organized as 4 x 4,196,304 words x 16 bits. Synchronous design allows precise	Original	WED416S16030A 100MHz WED416S16030A WED416S1630C7SI WED416S1630C75SI WED416S1630C8SI WED416S1630C10SI 133MHz 125MHz	PDF
EDI416S4030A Abstract: No abstract text available Text: EDI416S4030A White Electronic Designs 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION n n n n n The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with	Original	EDI416S4030A EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A10SI 1Mx16bitsx4banks 100MHz EDI416S4030A12SI	PDF

BA 508 IC Search Results

BA 508 IC Result Highlights (5)

BA 508 IC Datasheets Context Search

WED9LAPC2B16P8BC

Untitled

BA 508

WED9LAPC2C16V8BC

WED3DL644V

Untitled

TAPC640

Untitled

Electronic Designs

EDI9LC644V

Untitled

Untitled

WED9LAPC2B16P8BC

ED07

ED16-23

EDI416S4030A

WED416S8030A

TMS320C6000

TMS320C6000

TMS320C6000

SDA10

Untitled

Untitled

EDI416S4030A