marking BA
Abstract: transistor mark BA ba 2nd year PG05BAUSM
Text: SEMICONDUCTOR PG05BAUSM MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking BA 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA PG05BAUSM hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
PG05BAUSM
marking BA
transistor mark BA
ba 2nd year
PG05BAUSM
|
ba 2nd years
Abstract: transistor mark BA KRX101E marking BA
Text: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
KRX101E
ba 2nd years
transistor mark BA
KRX101E
marking BA
|
ba 2nd years
Abstract: KRX101U b.a 1st year ba 2nd year ba 1st year
Text: SEMICONDUCTOR KRX101U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
|
Original
|
PDF
|
KRX101U
ba 2nd years
KRX101U
b.a 1st year
ba 2nd year
ba 1st year
|
ba 2nd years
Abstract: KRX201E marking BA
Text: SEMICONDUCTOR KRX201E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
KRX201E
ba 2nd years
KRX201E
marking BA
|
transistor mark BA
Abstract: KRX201U ba 2nd years
Text: SEMICONDUCTOR KRX201U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
KRX201U
transistor mark BA
KRX201U
ba 2nd years
|
transistor mark BA
Abstract: KTC9011S ktc90
Text: SEMICONDUCTOR KTC9011S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BAF 2 1 Item Marking Description Device Mark BA KTC9011S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
KTC9011S
OT-23
transistor mark BA
KTC9011S
ktc90
|
CST4.00MGW
Abstract: CSAC4.00MGC SABC504-2EM CB CST4.00MGW040 CSA4.00MG SAK-C505 c166 development AP2424 Specification Quartz Crystals 8Mhz SAB-C504-2EM
Text: Microcontrollers ApNote AP242401 Ceramic Resonator Oscillators and the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the ceramic resonator oscillator functionality and gives
|
Original
|
PDF
|
AP242401
C500/C166
AP242401
CST4.00MGW
CSAC4.00MGC
SABC504-2EM CB
CST4.00MGW040
CSA4.00MG
SAK-C505
c166 development
AP2424
Specification Quartz Crystals 8Mhz
SAB-C504-2EM
|
SAB-C504-2EM
Abstract: SAF-C509-LM SAB80C517A-N18-T3 SAB80C517A-N18 SABC504-2EM CB CSAC4.00MGC CSACV24 CST4.00MGW SAB80C537 CST16.00MXW040
Text: Microcontrollers ApNote AP242401 Ceramic Resonator Oscillators and the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the ceramic resonator oscillator functionality and gives
|
Original
|
PDF
|
AP242401
C500/C166
AP242401
SAB-C504-2EM
SAF-C509-LM
SAB80C517A-N18-T3
SAB80C517A-N18
SABC504-2EM CB
CSAC4.00MGC
CSACV24
CST4.00MGW
SAB80C537
CST16.00MXW040
|
Untitled
Abstract: No abstract text available
Text: v IP Network Server NSC2U v Front and Rear I/O flexibility, with up to 8 x Gb NICs in front v Short depth, ruggedized 2U chassis v “Appliance” look and feel v Long life support 3 years v Dual, redundant AC or DC power option v Hardware RAID option v Industry-leading performance/watt
|
Original
|
PDF
|
|
F222
Abstract: No abstract text available
Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)
|
Original
|
PDF
|
OneNAND128
KFG2816Q1M-DEB
OneNAND128
KFG2816D1M-DEB
KFG2816U1M-DIB
67FBGA
/48TSOP1
F222
|
AXLE20
Abstract: No abstract text available
Text: Issue: 03 Specification AXLE20 Oscillator type : TCXO Parameter min. Frequency range Standard frequencies Frequency stability Initial tolerance vs. temperature in operating temperature range steady state vs. supply voltage variation vs. load change long term (aging) per year
|
Original
|
PDF
|
AXLE20
1000h,
2000h,
8000h
D-74821
AXLE20
|
SLC NAND endurance 100k years
Abstract: 802AH
Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)
|
Original
|
PDF
|
OneNAND128
KFG2816Q1M-DEB
OneNAND128
KFG2816D1M-DEB
KFG2816U1M-DIB
67FBGA
/48TSOP1
SLC NAND endurance 100k years
802AH
|
Untitled
Abstract: No abstract text available
Text: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date RD 3-19-13 BA 3-19-13 TITLE: Ceramic Crystal Oscillator PART #: B 3-2013
|
Original
|
PDF
|
MIL-STD-790
MIL-PRF-38534
OC5T28636XCSERX
66708R
|
Flash MCp nand DRAM 107-ball
Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
Text: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM
|
Original
|
PDF
|
KAG00J007M-FGG2
256Mb
32Mx8)
4Mx16x4Banks)
107-Ball
80x13
Flash MCp nand DRAM 107-ball
dq15d
SAMSUNG MCP
130 MCP NAND DDR
512M nand mcp
SAMSUNG MCp nand ddr
KAG00J007M-FGG2
UtRAM Density
nand mcp samsung ka
|
|
|
SAMSUNG MCP
Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
Text: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM
|
Original
|
PDF
|
K5D5657DCM-F015
256Mb
32Mx8)
4Mx16x4Banks)
107-Ball
SAMSUNG MCP
Flash MCp nand DRAM 107-ball
K5D5657DCM-F015
SAMSUNG 256Mb mcp Qualification Reliability
dq15d
samsung mcp 107-ball
|
Samsung MCP
Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
Text: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM
|
Original
|
PDF
|
K5D5657ACM-F015
256Mb
32Mx8)
4Mx16x4Banks)
128Mb
107-Ball
80x13
Samsung MCP
MCP NAND
K5D5657ACM
K5D5657ACM-F015
MCP 256M nand samsung mobile DDR
|
K5D1258
Abstract: k5d12 SAMSUNG MCP
Text: Target MCP MEMORY K5D1258KCM-D075 Document Title Multi-Chip Package MEMORY 512M Bit 64Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date Initial issue. - 512Mb NAND B-Die_ Ver 0.1 - 256Mb Mobile SDRAM F-Die_Ver 1.1 March 10, 2005
|
Original
|
PDF
|
K5D1258KCM-D075
64Mx8)
2Mx32x4Banks)
512Mb
256Mb
119-Ball
K5D1258
k5d12
SAMSUNG MCP
|
Untitled
Abstract: No abstract text available
Text: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN ISO 9001 FM 75597 Originator Date Engineering Date RD 3-19-13 BA 3-19-13 D 3-2013 All Added Screening Requirement
|
Original
|
PDF
|
MIL-STD-790
MIL-PRF-38534
OC5T33330XMSEXX
66692R
|
63FBGA
Abstract: KFG1216U2B 67-ball samsung "NOR Flash" 512MB
Text: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
OneNAND512Mb
KFG1216U2B-xIB6)
KFG1216U2B
512Mb
80x11
KFG1216U2B)
63ball
63FBGA
KFG1216U2B
67-ball
samsung "NOR Flash" 512MB
|
KFG1216U2B
Abstract: OneNAND 63FBGA Flash Memory SAMSUNG OneNAND
Text: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
OneNAND512Mb
KFG1216U2B-xIB6)
KFG1216U2B
512Mb
80x11
KFG1216U2B)
63ball
KFG1216U2B
OneNAND
63FBGA
Flash Memory SAMSUNG OneNAND
|
qualcomm nand
Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
Text: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
KBE00500AM-D437
512Mb
KBE00500AM-D437
SG2002063-01
qualcomm nand
SAMSUNG MCP
KBE00500AM
NAND FLASH DDP
MCP Specification
UtRAM Density
2gb nand mcp
137FBGA
SAMSUNG 256Mb NAND Flash Qualification Reliability
|
MCP 67 MV- A2
Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
Text: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K5D1G13ACD-D075
512Mb
K5D1G13ACD-D075000
SG2002063-01
MCP 67 MV- A2
K5D1G13ACD
SAMSUNG MCP
MCP MEMORY
K5D1G
K5D1G1
K5D1G13
SAMSUNG MCP Qualification Report
137FBGA
k5d1g13a
|
63FBGA
Abstract: KFG5616D1M-DEB KFG5616Q1M KFG5616Q1M-DEB KFG5616U1M-DIB 8017h
Text: OneNAND256 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND256 Part No. VCC core & IO Temperature PKG KFG5616Q1M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/48TSOP1 KFG5616D1M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/48TSOP1 KFG5616U1M-DIB 3.3V(2.7V~3.6V)
|
Original
|
PDF
|
OneNAND256
KFG5616Q1M-DEB
63FBGA
/48TSOP1
KFG5616D1M-DEB
KFG5616U1M-DIB
KFG5616D1M-DEB
KFG5616Q1M
KFG5616Q1M-DEB
KFG5616U1M-DIB
8017h
|
ctb-34
Abstract: rb60 51 MARKING V1J fmlg12 333X ES01 ES01A ES01F ES01Z EU02
Text: •1 3SE D SANKEN ELECTRIC CO LTD Fast Recovery Diodes E 3 7 ^ 0 7 4 1 GOOGÖDS 0 E 3SAKJ7^ 03" û I eVrh: 100~ 1500V Eio:0.5~ i.2A RH/ES/RS/RH/RU/EU V rm V Io Ifsm (A) (A) 450 650 850 250 450 650 1550 250 450 650 1600 650 850 — Ir |R(H) trr (M ) (//A )
|
OCR Scan
|
PDF
|
Q0DG605
ES01Z
ES01A
MI-10/15
SFPB-64
ctb-34
rb60 51
MARKING V1J
fmlg12
333X
ES01
ES01F
EU02
|