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    B90 3000 Search Results

    B90 3000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USBAM003.0-001 Amphenol Cables on Demand Amphenol CS-USBAM003.0-001 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-A Cable - USB 3.0 Type A Male to Type A Male [5.0 Gbps SuperSpeed] 1m (3.3') Datasheet
    CS-USBAB003.0-002 Amphenol Cables on Demand Amphenol CS-USBAB003.0-002 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-B Cable - USB 3.0 Type A Male to Type B Male [5.0 Gbps SuperSpeed] 2m (6.6') Datasheet
    CS-USBAB003.0-001 Amphenol Cables on Demand Amphenol CS-USBAB003.0-001 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-B Cable - USB 3.0 Type A Male to Type B Male [5.0 Gbps SuperSpeed] 1m (3.3') Datasheet
    CS-USBAM003.0-002 Amphenol Cables on Demand Amphenol CS-USBAM003.0-002 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-A Cable - USB 3.0 Type A Male to Type A Male [5.0 Gbps SuperSpeed] 2m (6.6') Datasheet
    CS-USBAB003.0-003 Amphenol Cables on Demand Amphenol CS-USBAB003.0-003 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-B Cable - USB 3.0 Type A Male to Type B Male [5.0 Gbps SuperSpeed] 3m (9.8') Datasheet
    SF Impression Pixel

    B90 3000 Price and Stock

    TE Connectivity TXR54AB90-2412AI2J

    Circular MIL Spec Strain Reliefs & Adapters TXR54AB90-2412AI2J
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    Mouser Electronics TXR54AB90-2412AI2J
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    Standex-Meder Electronics MK02/1-1B90-3000W

    Reed Sensor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Relay Specialties MK02/1-1B90-3000W 1
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    B90 3000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3115RL

    Abstract: b90 3000 3115RL04WB b80 3000
    Text: 3115RL 80 X 38L NMBTC.COM / 818.341.3355 Characteristic Curves General Specifications Motor Protection: (Pa) In H2O Auto Restart/Polarity Protection P-Q Curve Speed Curve Insulation Resistance: 500 10000 9000 B90 10M Ω or over with a DC500V Megger Static Pressure


    Original     		PDF 3115RL DC500V 3115RL-04W-B50- 3115RL-04W-B60- 3115RL-04W-B70- 3115RL-04W-B80- 3115RL-04W-B90- 3115RL b90 3000 3115RL04WB b80 3000

    Untitled

    Abstract: No abstract text available
    Text: 3115RL 80 X 38L NMBTC.COM / 818.341.3355 Characteristic Curves General Speciications Motor Protection: (Pa) In H2O Auto Restart/Polarity Protection P-Q Curve Speed Curve Dielectric Withstand Voltage: AC 700V 1s Allowable Ambient Temperature Range: 1.60 500


    Original     		PDF 3115RL DC500V 3115RL-04W-B60- 3115RL-04W-B70- 3115RL-04W-B80- 3115RL-04W-B90-

    F8000-FFFFF

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1610T/B 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Extended single-supply voltage range 2.7V to 3.6V for read and write MX29L1610T/B-90 • Regulated single-supply voltage range 3.0V to 3.6V for


    Original     		PDF MX29L1610T/B 16M-BIT MX29L1610T/B-90) MX29L1610T/B-70) 70/90ns 16K-block) 16K-block PM0582 SEP/20/1999 OCT/08/1999 F8000-FFFFF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1610T/B 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Extended single-supply voltage range 2.7V to 3.6V for read and write MX29L1610T/B-90 • Regulated single-supply voltage range 3.0V to 3.6V for


    Original     		PDF MX29L1610T/B 16M-BIT MX29L1610T/B-90) MX29L1610T/B-70) 70/90ns 16K-block) 16K-block StaP15 NOV/06/1998 MAR/22/1999

    Untitled

    Abstract: No abstract text available
    Text: 10.7 mm 0.422" DIAMETER FLUSH DIAPHRAGM TRANSDUCER WITH AMPLIFIED VOLTAGE OUTPUT Model PX101V1-500G10V Shown Smaller Than Actual Size MADE IN USA NIST PX101 Series .72 (18) WIRE CODE: PX101 455 $ Model Shown PIN A B C D CONNECTION +INPUT +OUTPUT -OUTPUT


    Original     		PDF PX101V1-500G10V PX101 PX101 DP41-E, DP25-E, DP24-E PX101V0-2KG10V

    Untitled

    Abstract: No abstract text available
    Text: MX29LV160T/B, MX29LV161T/B FEATURES 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program


    Original     		PDF MX29LV160T/B, MX29LV161T/B 16M-BIT 2Mx8/1Mx16] 70/90ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte program01

    LM 329 N

    Abstract: PB1021B a368 LM RAIL MODEL SR 20
    Text: Models SR-W, SR-WM, SR-V and SR-VM W B T （K） M H3 W2 W1 Outer dimensions Model No. Height Width Length M SR 15W/WM SR 15V/VM SR 20W/WM SR 20V/VM SR 25WY/WMY SR 25VY/VMY SR 30W/WM SR 30V/VM SR 35W/WM SR 35V/VM SR 45W SR 55W SR 70T SR 85T SR 100T SR 120T


    Original     		PDF 25WY/WMY 25VY/VMY SR85T SR100T DimensionsB-223 LM 329 N PB1021B a368 LM RAIL MODEL SR 20

    TSOP 48 Pattern

    Abstract: SA11 SA12 SA13 MX29F800T SA10
    Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption


    Original     		PDF MX29F800T/B 1Mx8/512Kx16] 70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte FEB/04/2002 JUN/06/2002 P39-40 TSOP 48 Pattern SA11 SA12 SA13 MX29F800T SA10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption


    Original     		PDF MX29F800T/B 1Mx8/512Kx16] 70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte Suspends/12/2001 JUN/15/2001 JUL/24/2001

    29F800T

    Abstract: MX29F800BTC-90 22D6H
    Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption


    Original     		PDF MX29F800T/B 1Mx8/512Kx16] 70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte P39-40 OCT/21/2002 MAY/29/2000 29F800T MX29F800BTC-90 22D6H

    SAMSUNG MR18R162GMN0

    Abstract: MR18R162GMN0-CK8
    Text: MR16R162C G MN0 MR18R162C(G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet


    Original     		PDF MR16R162C MR18R162C 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 MR18R162GMN0-CK8

    kmmr18r88c1-rk8

    Abstract: rg6 f connector 750 B36
    Text: KMMR16R84 6/8/C/G AC1 KMMR18R84(6/8/C/G)AC1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)


    Original     		PDF KMMR16R84 KMMR18R84 4/6/8/12/16d 128Mb 144Mb 127mm. kmmr18r88c1-rk8 rg6 f connector 750 B36

    Untitled

    Abstract: No abstract text available
    Text: MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption


    Original     		PDF MX29F800T/B 1Mx8/512Kx16] 70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte pB/04/2002 JUN/06/2002 AUG/13/2002

    MR18R0828BN1-CK8

    Abstract: MR18R0824 A84 marking code
    Text: MR16R0824 6/8/C/G BN1 MR18R0824(6/8/C/G)BN1 Change History Version 1.1 (October 2000) - First copy. - Based on the 1.1 ver. 128/144Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1a (October 2000) * Update based on the latest Rambus RIMM Datasheet Page No.


    Original     		PDF MR16R0824 MR18R0824 128/144Mbit -711MHz/-600MHz) -600MHz) 8Mx16) 128Mb 16K/32ms MR18R0828BN1-CK8 A84 marking code

    29LV160

    Abstract: mxic 29lv160 MX29LV160AT SA10 SA11 29lv160 Flash MX29LV160
    Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program


    Original     		PDF MX29LV160T/B MX29LV160AT/AB 16M-BIT 2Mx8/1Mx16] 70/90ns 9us/11us 16K-Bytex1, 32K-Bytex1, 64K-Byte NOV/21/2002 29LV160 mxic 29lv160 MX29LV160AT SA10 SA11 29lv160 Flash MX29LV160

    SAMSUNG MR18R162GMN0

    Abstract: A76 MARKING CODE MR18R162GMN0-CK8
    Text: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet


    Original     		PDF MR16R1624 MR18R1624 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 A76 MARKING CODE MR18R162GMN0-CK8

    29LV160

    Abstract: No abstract text available
    Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program


    Original     		PDF MX29LV160T/B MX29LV160AT/AB 16M-BIT 2Mx8/1Mx16] 70/90ns 9us/11us 16K-Bytex1, 32K-Bytex1, 64K-Byte MAR/26/2003 29LV160

    29LV160

    Abstract: 29lv160 Flash
    Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program


    Original     		PDF MX29LV160T/B MX29LV160AT/AB 16M-BIT 2Mx8/1Mx16] 70/90ns 9us/11us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0866 29LV160 29lv160 Flash

    ck7 marking code

    Abstract: marking code B49 a35 marking code
    Text: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)


    Original     		PDF MR16R0824 MR18R0824 4/6/8/12/16d 128Mb 144Mb 127mm. ck7 marking code marking code B49 a35 marking code

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 16M 2 M x 8 BIT MB M29 LV 016T-90-12/M B M29 LV 016 B-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs


    OCR Scan     		PDF 016T-90-12/M B-90/-12 40-pin MBM29LV01 6T-9om2/MBM29LV01 FPT-40P-M06) 40007S

    MBM29LV160BB

    Abstract: No abstract text available
    Text: FLASH MEMORY 16 M 2 M x 8 / 1 M x 16 BIT CMOS M B M 2 9 L V 1 6 0 T - 9 0 / - 1 0 /-1 2 / M B M 2 9 L V 1 6 O B -90/-1 0 /-1 2 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    OCR Scan     		PDF 48-pin 46-pin 48-ball 3-10/-12/M LV160 B-90/-10/-12 LCC-46P-M02) C46002S-4C-3 OT-90/-10/-12/M MBM29LV160BB

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs


    OCR Scan     		PDF MBM29LV160T-90-12/MBM29LV16 OB-90/-12 48-pin 46-pin 48-ball 6C-46P-M02) 46002S-4C MBM29LV160T-90/-12/M LV160

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1 61 OT/B 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Extended single-supply voltage range 2.7V to 3.6V for read and write MX29L1610T/B-90 • Regulated single-supply voltage range3.0V to 3.6V for


    OCR Scan     		PDF MX29L1 16M-BIT MX29L1610T/B-90) MX29L1610T/B-70) 70/90ns 16K-block) 16K-block OCT/08/1999 29L1610T/B-90: 29L1610T/B-90

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMMR16R84 6/8/C/G AC1 KMMR18R84(6/8/C/G)AC1 4/6/8/12/16d RIMM Module with 128Mb RDRAMs 4 6 8 1 2 16d RIMM™ Module with 144Mb RDRAMs Overview Key Timing Parameters/Part Numbers The Rambus RIMM™ module is a general purpose highperformance memory module suitable for use in a broad


    OCR Scan     		PDF KMMR16R84 KMMR18R84 4/6/8/12/16d 128Mb 144Mb 128Mb/144Mb