MGS903
Abstract: MGS901 MGS902 GC31 MGS907 Aeroflex MGS903 MGS802A Aeroflex MGS905 MGS904 MGS801
Text: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices
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MGS800/900
MIL-PRF-19500
MIL-PRF-38534
MGS903
MGS901
MGS902
GC31
MGS907
Aeroflex MGS903
MGS802A
Aeroflex MGS905
MGS904
MGS801
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B892
Abstract: MGS903 MGS902 MGS901
Text: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices
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MGS800/900
MIL-PRF-19500
MIL-PRF-38534
B892
MGS903
MGS902
MGS901
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MGS903
Abstract: GC210
Text: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices
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MGS800/900
MIL-PRF-19500
MIL-PRF-38534
J-STD-20C
A17031
MGS903
GC210
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Untitled
Abstract: No abstract text available
Text: MGS800/900 Series GaAs Schottky Diodes Description Features The Aerolex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices
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MGS800/900
MIL-PRF-19500
MIL-PRF-38534
A17031
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MGS903
Abstract: MGS905 GB310 Aeroflex MGS905
Text: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices
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MGS800/900
MIL-PRF-19500
MIL-PRF-38534
A17031
MGS903
MGS905
GB310
Aeroflex MGS905
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GC310
Abstract: mgs904 MGS800 mgs801 MGS912 MGS901 equivalent MGS903 GB110 MGS901 b882
Text: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices
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MGS800/900
MIL-PRF-19500
MIL-PRF-38534
A17031
GC310
mgs904
MGS800
mgs801
MGS912
MGS901 equivalent
MGS903
GB110
MGS901
b882
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diode b1c
Abstract: b1c diode
Text: SKS C 120 GDD 69/11 – A3A MA B1C Absolute maximum ratings 1 Symbol IIN MAX IOUT MAX VIN MAX VOUT MAX VBUS MAX FIN MAX FOUT MAX FSW MAX SKiiP stack SKiiPRACK - Type 3A 3-phase IGBT converter This stack can be used as a 2Q 3-phase inverter or a 4Q converter. All values are valid for 2Q and 4Q
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1EF52/-5
diode b1c
b1c diode
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LL46
Abstract: b8544
Text: 03/11/99 13:58:22 Diodes B85-44fr-4BS0->6B38e81932 C88019322 BightFftI Page 00? BAT46 / LL46 GENERAL PURPOSE SCHÛTTKY BARRIER DIODES Features • • • • BAT46 High Breakdown Voltage Low Turn-on Voltage Guard Ring Construction tor Transient Protaction
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B85-44fr-4BS0-
6B38e81932
C88019322
BAT46
BAT46
DO-35.
MIL-STD-202,
DO-35
250nA
LL46
b8544
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B85 diode
Abstract: No abstract text available
Text: Sensors Infrared light emitting diode, cast type SIR-320ST3F The S IR -3 2 0 S T 3 F is a G a A s infrared light emitting d iode h o u se d in clear plastic. This device h a s a high lu m in ou s efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the sa m e time ha s a wide radiation
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SIR-320ST3F
SIR-320ST3F
B85 diode
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mitsubishi avalanche photodiode ingaas ghz
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode suitable for • A c tiv e diameter 50 /¿m receiving the light having low noise, a wavelength band of • L o w noise
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1600nm
1300nm
mitsubishi avalanche photodiode ingaas ghz
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RLD78NP
Abstract: rld78pp
Text: Laser Diodes AIGaAs laser diodes RLD-78PP/RLD-78NP The RLD-78PP and RLD-78NP are the •E x te rn a l dimensions Unit: mm w o rld ’s first m a ss-prod uced laser diodes those are m anufactured by molecular beam epitaxy. The charac teristics of these laser diodes are suit
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RLD-78PP/RLD-78NP
RLD-78PP
RLD-78NP
RLD78NP
rld78pp
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Untitled
Abstract: No abstract text available
Text: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The S1M-20ST is a GaAs infrared light em itting diode housed in clear plastic. Side em ission with a <f> 1.85 mm lens and a 950 nm spectrum suitable for silicon detectors m ake it an ideal light source for sensors. It is particularly suited
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SIM-20ST
SIM-20ST
RPM-20PB.
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sir563
Abstract: CT81
Text: Sensors Infrared light emitting diode, cast type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm spectrum suitable for silicon detectors. It has a wide radiation angle and is ideal for com
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SIR-563ST3F
SIR-563ST3F
sir563
CT81
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B85 diode
Abstract: RLD-78NP15
Text: Laser Diodes AIGaAs laser diode RLD-78NP15 The R LD -78N P15 is th e w o rld ’s first • E x te rn a l dim ensions Unit: mm m a s s -p ro d u c e d la se r d io d e s th a t is m anufactured by m olecular beam epi taxy. The pro p e rtie s, h igh spe ed and
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RLD-78NP15
RLD-78NP15
B85 diode
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Untitled
Abstract: No abstract text available
Text: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The SIM-20ST is a GaAs infrared light emitting diode housed in clear plastic. Side emission with a $ 1.85 mm lens and a 950 nm spectrum suitable for silicon detectors make it an ideal light source for sensors. It is particularly suited
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SIM-20ST
SIM-20ST
RPM-20PB.
-251c
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SIR-34ST3F
Abstract: infrared sensors reliability
Text: Sensors Infrared light emitting diode, cast type SIR-34ST3F The SIR-34ST3F is a G aAs infrared lig h t e m ittin g d io d e ho use d in cle ar plastic. T his de vice has a high lu m ino us efficiency and a 950 nm spectrum suitable for silicon detectors. It is small and at the same tim e has a w ide radiation
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SIR-34ST3F
SIR-34ST3F
infrared sensors reliability
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a0432
Abstract: A-0427 nichicon a423 A0431 A423
Text: HYBRID I.C.s "Hi-Net" nîcKîcon Diode Arrays High-speed switching diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general electronic appliances.
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A0423
A0424
A0425
A0426
A0427
A0428
A0429
A0430
A0431
A0432
A-0427
nichicon a423
A423
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES TYPE NAME FEATURES DESCRIPTION P D 7X X 8 s e rie s are InG aA s pin p h o to d io d e w h ic h has a PD 7XX8 is s u ita b le band of fo r </>80 fx m active diam eter • l0 0 0 ~ 1 6 0 0 n m sensitive area o f <j>80 ¡1 m.
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PD7088
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Photointerrupter rpi 574
Abstract: No abstract text available
Text: Sensors Photointerrupter, encased type RPI-574 The RPI-574 is a transm issive-type photointerrupter. The em itter is a GaAs infrared light em itting diode and the d e tector is a silicon planar phototransistor. A positioning pin is provided on the external case to allow precise m ou nt
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RPI-574
RPI-574
Photointerrupter rpi 574
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B85 diode
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES p ML7XX12 SERIES ect'cai100 M o \c e 'n ûU,c l\rf\^s ar soroepararn InGaAsP - M Q W - F P LASER DIODE ARRAYS TYPE NAME FEATURES DESCRIPTION M L 7X X 1 2 s e rie s are InG aA sP p ro v id e s 12beam s w ith oscillation o f em ission
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cai100
ML7XX12
12beam
1310nm
B85 diode
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML7XX11 SERIES InG aA sP -M Q W -D FB LASER DIODES TYPE NAME FEATURES DESCRIPTION ML7XX11 series are M Q W +— DFB* • L o w threshold current typical laser diodes emitting 10mA •S ta b le single transverse mode oscillation light beam around 131Qnm.
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ML7XX11
131Qnm.
ML776H11F
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Untitled
Abstract: No abstract text available
Text: Laser Diodes AIGaAs laser diodes RLD-78MV The RLD-78MV is the w o rld 's first m a ss-pro duced laser d io d e s to be mass produ ced by m olecular beam epitaxy. Low -noise is achieved th ro u g h se lf-p u lsa tio n . This laser diode is ideal fo r use in video disc
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RLD-78MV
RLD-78MV
ibb43
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IEC50
Abstract: Infrared photosensor
Text: Sensors Reflective photosensor with encased reflector RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity and a built-in visible light filter
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RPR-359F
RPR-359F
IEC50
Infrared photosensor
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smd diode 106a
Abstract: DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S BYG90-90 B85 diode smd diode byg 20
Text: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD
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BYG90-90
BYG90-90
OD106A
b-100
7110fl2b
711002b
01032B3
smd diode 106a
DIODE MARKING B85
smd diode byg
SOD106A
smd 106a
byg 100 diode
smd diode 1S
B85 diode
smd diode byg 20
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