Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23 T/P 1721 C -X X B S 2 0 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D1721C-xxBS20 is a fully decoded 1,048,576-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of sixteen 4-Mb DRAMs 1M x 4 an d four 2-Mb
|
OCR Scan
|
MSC23T1721C-XXBS20
MSC23P1721C-XXBS20
576-Word
72-Bit
MSC23T/D1721C-xxBS20
168-pin
72-bit
MSC23T1721C-xxBS20
|
PDF
|
ABB BOD 1-17 r
Abstract: abb variable frequency drive wiring diagram
Text: O K I Semiconductor MSM6665-01 DOT MATRIX LCD CONTROL DRIVER GENERAL DESCRIPTION The MSM6665-01 is a dot-matrix LCD control driver which has functions of displaying charac ters, cursor and arbitrators. The MSM6665-01 is provided with 17 dot common drivers, 80 dot segment drivers, RAM for
|
OCR Scan
|
MSM6665-01
MSM6665-01
b7EM240
0Dn377
QFP128-P-1420-K
2424D
ABB BOD 1-17 r
abb variable frequency drive wiring diagram
|
PDF
|
dynamic ram binary cell
Abstract: No abstract text available
Text: O K I SEMICONDUCTOR GROUP AT ,6 7 ? 4 2 4 0 O K I O K I SEMICONDUCTOR GROUP 89D 0 2 7 4 6 D L724S40 0D0274L, 4 -c ? 3 '/7 semiconductor_ MSC2311YS8/KS8_ 1,048,576 BY 8 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2311Y S8/KS8 is a fu lly decoded, 1,048,576 words X 8 bit NMOS dynamic random
|
OCR Scan
|
L724S40
0G027ML,
MSC2311YS8/KS8
MSC2311YS8/KS8
MSM411000JS)
MSM411000JS;
dynamic ram binary cell
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM532000B 131,072-Word x 16-Bit Mask ROM DESCRIPTION The OKI MSM532000B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity. The MSM532000B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro
|
OCR Scan
|
MSM532000B
072-Word
16-Bit
MSM532000B
128Kxl6bits
b724240
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6606 80-DOT LCD DRIVER WITH KEY MATRIX G ENERAL DESCRIPTIO N MSM6606 is an LCD driver for a 1/2 duty dynamic display, that can directly drive an LCD for up to 80 segments, and one LED. Due to an internal 5x6 keyscan circuit, keyboard input
|
OCR Scan
|
MSM6606
80-DOT
MSM6606
80-segment
L724540
|
PDF
|
sm 0038 tsop
Abstract: sm 0038 sm 0038 PIN DIAGRAM D2720
Text: O K I S em ic o n d u c to r M SC23T/D 2720A -X X BS9 2,097,152-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M em ory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SOJ
|
OCR Scan
|
MSC23T/D2720A-XXBS9
152-Word
72-Bit
MSC23T/D2720A-xxBS9
16-Mb
168-pin
72-bit
sm 0038 tsop
sm 0038
sm 0038 PIN DIAGRAM
D2720
|
PDF
|
tws 433 tx
Abstract: TSOP32 pad
Text: O K I Semiconductor MSM7570L/ MSM7590L 3V Single-Rail ADPCM CODECs D E S C R IP TIO N The M SM 7570L and M SM 7590L are single-rail, low -voltage, single-channel, full-duplex AD PCM CODECs which perform voice digitization using presampling and reconstruction filters for transmit and
|
OCR Scan
|
MSM7570L
MSM7590L
MSM7590L
MSM7570L
204ameter
2424D
Q0n27fl
tws 433 tx
TSOP32 pad
|
PDF
|
B754
Abstract: S4240
Text: O K I Semiconductor MSM51 V16800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V16800_
152-Word
MSM51V16800
cycles/64ms
MSM51V16800
A0-A11
b724240
B754
S4240
|
PDF
|
SGCT
Abstract: sGCT function IC 741 amp 85to D021 MSM7586-01 MSM7586-01TS-K OD21A AVR QPSK utc8
Text: O K I Semiconductor MSM7586-01 71/4 Shift QPSK MODEM/ADPCM CODEC GENERAL DESCRIPTION The MSM7586 is a CMOS IC developed for use w ith digital cordless telephones. The device provides a ti/ 4 shift QPSK m odem function and a CODEC function w hich perform s transcoding
|
OCR Scan
|
MSM7586-01
MSM7586
SGCT
sGCT function
IC 741 amp
85to
D021
MSM7586-01
MSM7586-01TS-K
OD21A
AVR QPSK
utc8
|
PDF
|
me 555
Abstract: 3tr5 active suspension MD56V62800A 270b5 D56V62800A
Text: E2G1054-18-62 O K I Semiconductor MD56V62800A This version: Jun. 1998 4-B ank x 2,097,152-W ord x 8-Bit SYNCHRONOUS DYNAM IC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
|
OCR Scan
|
E2G1054-18-62
MD56V62800A
152-Word
MD56V62800A
cycles/64
b7E4E40
me 555
3tr5
active suspension
270b5
D56V62800A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: E2G0106-18-42 O K I Semiconductor This,eision:Apr1998 MSM511 6 4 0 0 C_ 4,194,304-Word x 4-Bit D YNAM IC R AM : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
|
OCR Scan
|
E2G0106-18-42
MSM511
304-Word
MSM5116400C
26/24-pin
304-w
|
PDF
|
MSM514256
Abstract: ZIP20-P-400 B72L
Text: O K I Semiconductor MSM5 1 4 2 5 6 C/CL_ 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM514256C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is
|
OCR Scan
|
MSM514256C
MSM514256CL
144-Word
MSM514256C/CL
144-word
a20-pin
26/20-pin
20-pin
MSM514256
ZIP20-P-400
B72L
|
PDF
|
MSC23232C
Abstract: No abstract text available
Text: O K I Semiconductor M SC23232C/CL-XXBS16/DS16 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23232C / CL-xxBS16/DS16 is a fully decoded 2,097,152-word x 32-bit CMOS Dynamic Random. Access M emory M odule com posed of sixteen 4-Mb DRAMs 1M x 4 in SOJ
|
OCR Scan
|
MSC23232C/CL-XXBS16/DS16
152-Word
32-Bit
MSC23232C
/CL-xxBS16/DS16
72-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1V4 10O/SL 4,194,304-Word x 1-Bit D Y N A M IC RAM DESCRIPTION The MSM 51V4100/SL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit configuration. The technology used to fabricate the MSM 51V4100/SL is OKI's CMOS silicon gate
|
OCR Scan
|
10O/SL
304-Word
51V4100/SL
1024cycles/16m
128ms
MSM51V41OO/SL
72424G
|
PDF
|
|
|