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    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23 T/P 1721 C -X X B S 2 0 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D1721C-xxBS20 is a fully decoded 1,048,576-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of sixteen 4-Mb DRAMs 1M x 4 an d four 2-Mb


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    PDF MSC23T1721C-XXBS20 MSC23P1721C-XXBS20 576-Word 72-Bit MSC23T/D1721C-xxBS20 168-pin 72-bit MSC23T1721C-xxBS20

    ABB BOD 1-17 r

    Abstract: abb variable frequency drive wiring diagram
    Text: O K I Semiconductor MSM6665-01 DOT MATRIX LCD CONTROL DRIVER GENERAL DESCRIPTION The MSM6665-01 is a dot-matrix LCD control driver which has functions of displaying charac­ ters, cursor and arbitrators. The MSM6665-01 is provided with 17 dot common drivers, 80 dot segment drivers, RAM for


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    PDF MSM6665-01 MSM6665-01 b7EM240 0Dn377 QFP128-P-1420-K 2424D ABB BOD 1-17 r abb variable frequency drive wiring diagram

    dynamic ram binary cell

    Abstract: No abstract text available
    Text: O K I SEMICONDUCTOR GROUP AT ,6 7 ? 4 2 4 0 O K I O K I SEMICONDUCTOR GROUP 89D 0 2 7 4 6 D L724S40 0D0274L, 4 -c ? 3 '/7 semiconductor_ MSC2311YS8/KS8_ 1,048,576 BY 8 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2311Y S8/KS8 is a fu lly decoded, 1,048,576 words X 8 bit NMOS dynamic random


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    PDF L724S40 0G027ML, MSC2311YS8/KS8 MSC2311YS8/KS8 MSM411000JS) MSM411000JS; dynamic ram binary cell

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM532000B 131,072-Word x 16-Bit Mask ROM DESCRIPTION The OKI MSM532000B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity. The MSM532000B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro­


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    PDF MSM532000B 072-Word 16-Bit MSM532000B 128Kxl6bits b724240

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM6606 80-DOT LCD DRIVER WITH KEY MATRIX G ENERAL DESCRIPTIO N MSM6606 is an LCD driver for a 1/2 duty dynamic display, that can directly drive an LCD for up to 80 segments, and one LED. Due to an internal 5x6 keyscan circuit, keyboard input


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    PDF MSM6606 80-DOT MSM6606 80-segment L724540

    sm 0038 tsop

    Abstract: sm 0038 sm 0038 PIN DIAGRAM D2720
    Text: O K I S em ic o n d u c to r M SC23T/D 2720A -X X BS9 2,097,152-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M em ory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SOJ


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    PDF MSC23T/D2720A-XXBS9 152-Word 72-Bit MSC23T/D2720A-xxBS9 16-Mb 168-pin 72-bit sm 0038 tsop sm 0038 sm 0038 PIN DIAGRAM D2720

    tws 433 tx

    Abstract: TSOP32 pad
    Text: O K I Semiconductor MSM7570L/ MSM7590L 3V Single-Rail ADPCM CODECs D E S C R IP TIO N The M SM 7570L and M SM 7590L are single-rail, low -voltage, single-channel, full-duplex AD PCM CODECs which perform voice digitization using presampling and reconstruction filters for transmit and


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    PDF MSM7570L MSM7590L MSM7590L MSM7570L 204ameter 2424D Q0n27fl tws 433 tx TSOP32 pad

    B754

    Abstract: S4240
    Text: O K I Semiconductor MSM51 V16800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V16800_ 152-Word MSM51V16800 cycles/64ms MSM51V16800 A0-A11 b724240 B754 S4240

    SGCT

    Abstract: sGCT function IC 741 amp 85to D021 MSM7586-01 MSM7586-01TS-K OD21A AVR QPSK utc8
    Text: O K I Semiconductor MSM7586-01 71/4 Shift QPSK MODEM/ADPCM CODEC GENERAL DESCRIPTION The MSM7586 is a CMOS IC developed for use w ith digital cordless telephones. The device provides a ti/ 4 shift QPSK m odem function and a CODEC function w hich perform s transcoding


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    PDF MSM7586-01 MSM7586 SGCT sGCT function IC 741 amp 85to D021 MSM7586-01 MSM7586-01TS-K OD21A AVR QPSK utc8

    me 555

    Abstract: 3tr5 active suspension MD56V62800A 270b5 D56V62800A
    Text: E2G1054-18-62 O K I Semiconductor MD56V62800A This version: Jun. 1998 4-B ank x 2,097,152-W ord x 8-Bit SYNCHRONOUS DYNAM IC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


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    PDF E2G1054-18-62 MD56V62800A 152-Word MD56V62800A cycles/64 b7E4E40 me 555 3tr5 active suspension 270b5 D56V62800A

    Untitled

    Abstract: No abstract text available
    Text: E2G0106-18-42 O K I Semiconductor This,eision:Apr1998 MSM511 6 4 0 0 C_ 4,194,304-Word x 4-Bit D YNAM IC R AM : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS


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    PDF E2G0106-18-42 MSM511 304-Word MSM5116400C 26/24-pin 304-w

    MSM514256

    Abstract: ZIP20-P-400 B72L
    Text: O K I Semiconductor MSM5 1 4 2 5 6 C/CL_ 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM514256C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is


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    PDF MSM514256C MSM514256CL 144-Word MSM514256C/CL 144-word a20-pin 26/20-pin 20-pin MSM514256 ZIP20-P-400 B72L

    MSC23232C

    Abstract: No abstract text available
    Text: O K I Semiconductor M SC23232C/CL-XXBS16/DS16 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23232C / CL-xxBS16/DS16 is a fully decoded 2,097,152-word x 32-bit CMOS Dynamic Random. Access M emory M odule com posed of sixteen 4-Mb DRAMs 1M x 4 in SOJ


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    PDF MSC23232C/CL-XXBS16/DS16 152-Word 32-Bit MSC23232C /CL-xxBS16/DS16 72-pin

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1V4 10O/SL 4,194,304-Word x 1-Bit D Y N A M IC RAM DESCRIPTION The MSM 51V4100/SL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit configuration. The technology used to fabricate the MSM 51V4100/SL is OKI's CMOS silicon gate


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    PDF 10O/SL 304-Word 51V4100/SL 1024cycles/16m 128ms MSM51V41OO/SL 72424G