Untitled
Abstract: No abstract text available
Text: SKiiP 12NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K<DR .< .<1Y K/DR -* P HG Q<M 45%7* 2&97'8:*7 *B7?: :76 -* P HG UVSW Q< -[ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +
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12NAB065V1
12NAB065V1
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Untitled
Abstract: No abstract text available
Text: SKiiP 11NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L<DS .< .<1Y L/DS -* Q HG R<J 45%7* 2&97'8:*7 *B7?: :76 -* Q HG VWTX R< -[ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +
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11NAB065V1
11NAB065V1
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Untitled
Abstract: No abstract text available
Text: SKiiP 13NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L<DS .< .<1[ L/DS -* Q HG R<J 45%7* 2&97'8:*7 *B7?: :76 -* Q HG UVNW R< -] Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +
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13NAB065V1
13NAB065V1
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Untitled
Abstract: No abstract text available
Text: SKiiP 14NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L<DT .< .<1Z L/DT -* R HG S<J 45%7* 2&97'8:*7 *B7?: :76 -* R HG VWOX S< -¥ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +
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14NAB065V1
14NAB065V1
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BAT378W
Abstract: No abstract text available
Text: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)
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BAT378W
Capaci125
BAT378W
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BAT378W
Abstract: MARKING CODE B7
Text: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)
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BAT378W
Capaci125
BAT378W
MARKING CODE B7
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Untitled
Abstract: No abstract text available
Text: SKiiP 15AC065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter N<DU .< .<1[ N/DU -* S HG T<L 45%7* 2&97'8:*7 *B7?: :76 -* S HG WXKY T< &B ¥ J O* -^ Diode - Inverter MiniSKiiP 1 3-phase bridge inverter SKiiP 15AC065V1 Features # $%&' )(*& +,- ./0-*
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15AC065V1
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Untitled
Abstract: No abstract text available
Text: SKiiP 37NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper M<DU .< .<1Z M/DU -* S HG T<P 45%7* 2&97'8:*7 *B7?: :76 -* S HG XOVY T< -¥ Diode - Inverter, Chopper MiniSKiiP 3 -* S HG XOVY T< .R .R1Z -¥
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37NAB065V1
37NAB065V1
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Untitled
Abstract: No abstract text available
Text: SKiiP 26NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper M<DS .< .<1Z M/DS -? Q HG R<K 45%7* 2&97'8:*7 *B7?: :76 -* Q HG VWTX R< -¥ Diode - Inverter, Chopper MiniSKiiP 2 -* Q HG VWTX R< .P .P1Z -¥
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26NAB065V1
26NAB065V1
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Untitled
Abstract: No abstract text available
Text: SKM 300GB12T4 12 3& $ / Absolute Maximum Ratings Symbol Conditions IGBT , 7 12 3 7 0:2 3 =+ 0155 15 - ;5 3 <12 - >55 - ? 15 05 B 12 3 <25 - ;5 3 1'5 - >55 - 0225 - 255 - 4 5 60:2 3 4 5 6012
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300GB12T4
300GAL12T4
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Untitled
Abstract: No abstract text available
Text: SKM 300GB12T4 12 3& $ / Absolute Maximum Ratings Symbol Conditions IGBT , 7 12 3 7 0:2 3 =+ 0155 15 - ;5 3 <12 - >55 - ? 15 05 B 12 3 <25 - ;5 3 1'5 - >55 - 0225 - 255 - 4 5 60:2 3 4 5 6012
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300GB12T4
300GAL12T4
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DIODE S3V 94
Abstract: DIODE S3V 43 DIODE S3V 75 IAL66 DIN 50014 S10ms DIN 50014 STANDARD S3V Diode 23
Text: W ITEL-EFUNKEN ELECTRONIC ]> • IAL66 fi^EOO^b PGD7 b7 ? T - U h * 1 CNR 21 TTItUStFQflMKlIMelectronic CreativeTachnotogtes Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor
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D007b7?
IAL66
0806/IEC
0750/T1
0860/IEC
0007bfll
-200-mA
DIODE S3V 94
DIODE S3V 43
DIODE S3V 75
DIN 50014
S10ms
DIN 50014 STANDARD
S3V Diode 23
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1s1588
Abstract: Diode 1S1588 1S1587 1S1536 1s85
Text: TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA ~ b7 Dlf| ^ 7 2 5 0 DISCRETE/OPTO _ 67C_09299_. 1S1585—1S1588 Silicon Epitaxial' Planar Type Diode ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: Low Forward Voltage : Vf =1.0V (Max.) . Small Total Capacitance : Cx=2pF (Max.)
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-CDISCRETE/0PT03-
1S1585--1S1588
1S1585
1S1536
1S1587
1S1588
Diode 1S1588
1s85
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is1555
Abstract: silicon diode 151555 IS1553 1S1555 1s1555 diode silicon diode 1S1555 1S1553-1S1555 1S1553 MARKING toshiba 133 1S1554
Text: TOSHIBA b7 {DISCRETE/OPTO} 9097250 TOSHIBA DE-! TO^ESO OOCHEn? 3 | D I S C R E T E / O P T O _ ^ 67C 09297 D. / - Silicon Epitaxial "Planar Type 1S1553—1S1555 Diode Unit in min GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES :
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1S1553-1S1555
1S1553
1S1554
1S1555
DO-35
SC-40
100mA
is1555
silicon diode 151555
IS1553
1S1555
1s1555 diode
silicon diode 1S1555
1S1553-1S1555
1S1553
MARKING toshiba 133
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IS2460
Abstract: 1S2462 1S2461 1S2460 SC-40 TOSHIBA RECTIFIER
Text: TOSHIBA {DISCRET E/ OPT O} 9097250 TOSHIBA b7 <DISCRETE/OPTO M | ciaci7SSD 0 00 ^ 31 4 " 67C 0 9 3 1 4 ÜT-ot- *>'t\ *’ sllconPlanarTyBe 1S2460-1S2462 Diode GENERAL PURPOSE RECTIFIER APPLICATIONS. Unit in mm FEATURES: H . High Reverse Voltage : VR=200V Min.) (1S2462)
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flS2460~
S2462
1S2462)
1S2460
1S2461
1S2462
IS2460
IS2460
1S2462
1S2461
SC-40
TOSHIBA RECTIFIER
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Untitled
Abstract: No abstract text available
Text: TOSHIBA b7 {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO DeT | t O,î 7ESD ODPTETb 1 * D T 'O S 'O Q 67C 0 92 96 Silicon Epitaxial Planar Typei. 1N4608 Diode TENTATIVE Unit in ram COMMUNICATION A ND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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1N4608
100mA
250mA
350mA
450mA
500mA
500mA,
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OPB760N
Abstract: OPB760T OPB761N OPB762N OPB763N OPB770N OPB770T
Text: Product Bulletin OPB760N June 1996 b7^flSÖG DDD2^tiE MTfi OPTEK Photologic Reflective Object Sensors Types OPB760N, OPB761N, OPB762N, OPB763N Features • Choice of mounting configurations • Choice of output configurations Description The OPB760N series of reflective
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OPB760N
OPB760N,
OPB761N,
OPB762N,
OPB763N
OPB760T
OPB770N
OPB770T
OPB761N
OPB762N
OPB763N
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H 48 zener diode
Abstract: Toshiba 02BZ2.2 02BZ2.2 zener h 48 zener diode 4.7V current rating Zener Diode frequency Diode 02bz3.9 zener diode si 18 02BZ4.7 opto 101
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA b7 <DI SC R E T E / O PT O> *• ~ dF| ^ 7 2 5 0 67C 09264 Silicon Planar Type DQGiam □ f 0/"-//"O7 i 02BZ2.2-02BZ4.7 Zener Diode Unit in mm LOW VOLTAGE REGULATION AND LOW REFERENCE VOLTAGE APPLICATIONS. FEATURES:
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02BZ2
2-02BZ4
02BZ4
H 48 zener diode
Toshiba 02BZ2.2
02BZ2.2
zener h 48
zener diode 4.7V current rating
Zener Diode frequency
Diode 02bz3.9
zener diode si 18
02BZ4.7
opto 101
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05Z5.1
Abstract: irf 1820 Irf 1540 N 05Z5.6 05Z12Y 05Z6.2 05Z12 05Z16 05Z6.8 05Z5.6Y
Text: b7 TOSHIBA { DI SCRET E/ OP TO } 9097250 T O SH I BA dF D IS C R E TE/OPTO > 05Z5.1 -05Z24 I tchtesd 67C 09277 .* oocna? a 1 ~ 0 T ' / / ‘// • Silicon Planar Type Zener Diode Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS.
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-05Z24
500mW
DO-35
BO-40
05Z5.1
irf 1820
Irf 1540 N
05Z5.6
05Z12Y
05Z6.2
05Z12
05Z16
05Z6.8
05Z5.6Y
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1SV162
Abstract: No abstract text available
Text: TOSHIBA { D IS CR ETE/ OP TO} 9097250 TOSHIBA b7 DISCRETE/OPTO D eT | TOTTSSD 0 0 D ‘ìB7fl 3 " j ” ' ~ o T r o U f- 67C 09378 Silicon Epitaxial Planar Type 1SV162 Variable Capacitance Diode Unit in nnn TV TUNER, VHF BAND ELECTRONIC TUNING APPLICATIONS.
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1SV162
C3V/C25V
50MHz
1SV162
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1N4608
Abstract: SC-40 toshiba diode do-35 039 opto TOSHIBA 1N4608
Text: b7 TOSHIBA {DIS CR ETE /O PT O} 9097250 TOSHIBA DISCRETE/OPTO DeT| t O,î7ESD ODPTETb 1 * 67C 09296 Silicon Epitaxial P lanar Typei. D T m0'3’’0 4 1N4608 Diode TENTATIVE Unit in ram COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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1N4608
DO-35
SC-40
100mA
250mA
350mA
450mA
500mA
500mA,
1N4608
SC-40
toshiba diode do-35
039 opto
TOSHIBA 1N4608
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1S2236
Abstract: 09313 DDM313 09312 V10-30
Text: b7 TOSHIBA {DIS CRE TE/ OPT O} dìT| ^7250 Dom3 ia t 1~~ 9097250 TOSHIBA DI SCRETE/OPTO D T ^ l 1/ ? 67C 09312 Silicon Epitaxial Planar Type 1S2236 Variable Capacitance Diode Unit in mm AFC APPLICATION FOR FM RECEIVER. O A FEATURES : . High Q Q=70(Min.) (f=50MHz)
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50MHz
DDM313
1S2236â
1S2236
09313
09312
V10-30
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Untitled
Abstract: No abstract text available
Text: b7 pTI^dttesd QOOTBSB T TOSHIBA {DISCRETE/OPTOï 9097250 TOSHIBA D I S C R E T E /OPTO 67C 0 9 3 5 3 D r - o 7 ~t'jr 1SV99 Silicon EpitaxiaJ ;Pin Type Diode Weight : 0.2g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION
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1SV99
100HHz
00IIH354
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1SV75
Abstract: No abstract text available
Text: b7 TOSHIBA {DISCRETE/OPTOï 9097250 TOSHIBA . , d F | t C H 7 2 S 0 □□DT3SS 7 <D I SC R ET E/ OP TO - Silitíon Epitaxial Planar T y p e i_ . . 1SV75 Variable Capacitance Diode Unit in TV TUNER, VHF BAND ELECTRONIC TUNING APPLICATIONS. FEATURES :
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1SV75
C3V/C25V
50HHz
1SV75
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