NDS9936
Abstract: Vi46 ab-1 national
Text: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9936
LS01130
125-C
bS01130
NDS9936
Vi46
ab-1 national
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NDS9956A
Abstract: No abstract text available
Text: National Semiconductor” M ay 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p ow er field effect tran sisto rs are produced using National's p ro p rie ta ry, high cell density, DMOS technology.
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NDS9956A
b5G113G
DD4D047
NDS9956A
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"NPN Transistors" 2n3567
Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40
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2N699
2N1613
2N1711
2N1890
to-202
tn3742
to-237
"NPN Transistors" 2n3567
NSE459
NSDU05
NSD458
2N6718 TO-237
2N3569
2N6593
2N5336
2N3567
MPSW06
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