NPD5564
Abstract: NPD5566 NPD8303 npd5565 2N5565 T071 2N5906 dual jfets NPD5566 Dual jfets
Text: Dual JFETs • b5D1130 DD^^SDS bSD « N S C S NATL SEHICOND DISCRETE N Channel vP Device (V) Min Max G* VGS1-2 (mmho) Min Max Vos (mV) Max Drift (nV/C) A V bs Max ßfc ■oss Match Match % % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50
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b5D1130
T0-71
T0-78
NPD5564
NPD5566
NPD8303
npd5565
2N5565
T071
2N5906
dual jfets
NPD5566 Dual jfets
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NZT6715
Abstract: TN6715A
Text: TN6715AI NZT6715 & _ D iscrete P O W E R & S ig n a l Technologies National Se m i ro n d u c I o r " TN6715A NZT6715 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.
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TN6715A
O-226
NZT6715
OT-223
b501130
0Cm07Sb
b5D1130
NZT6715
TN6715A
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NDS8839H
Abstract: Complementary MOSFET Half Bridge
Text: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
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NDS8839H
bS0113D
NDS8839H
Complementary MOSFET Half Bridge
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BD371C-10
Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o
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b50113D
L5D1130
T-03-01
BD371C-10
BD371D
BF494
BF936
yc 236
b055
BC338-25 NATIONAL SEMICONDUCTOR
BD371B
BD371C
BD371C-6
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DG40B
Abstract: DY TRANSISTOR PN918
Text: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R
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PN918
MMBT918
PN918
OT-23
bSD113D
Q40bQc
DG40B
DY TRANSISTOR
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FRP1620CC
Abstract: FRP1610CC FRP1605CC FRP1615CC FRP1640CC FRP1650CC FRP1660CC FRP2005CC FRP2010CC FRP2015CC
Text: z j m N a S e t m i o i n c a o l n Dual Rectifiers, Common Cathode d u c t o r If Avg. A V TO-220AB (38) 50 10 50 0.95 8 16 FRP1610CC TO-220AB (38) 100 10 100 0.95 8 FRP1615CC T0220A B (38) 150 10 150 0.95 FRP1620CC TO-22ÛAB (38) 200 10 200 FRP1640CC TO-220AB
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FRP1605CC
O-220AB
FRP1610CC
FRP1615CC
FRP1620CC
FRP1640CC
FRP1650CC
FRP1660CC
FRP2005CC
FRP2010CC
FRP2015CC
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BAV70
Abstract: BAV74 BAV70 ON diode bav70 BAV99
Text: BAV70 / BAV74 & Discrete POW ER & Signa l Technologies National Semiconductor" BAV70 / 74 High Conductance Ultra Fast Diode Sourced from P ro ce ss 1 P. S e e B A V 9 9 for characteristics. Absolute Maximum Ratings* T A = 25°C unless otherwise noted Value
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BAV70
BAV99
BAV74
100HA
BAV70 ON
diode bav70
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Untitled
Abstract: No abstract text available
Text: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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m 861
Abstract: NDB6051 NDP6051 GCMOz 225si T-50113
Text: é> Na t io na I Semiconductor'' M ay 19 96 NDP6051/ NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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May1996
NDP6051/NDB6051
m 861
NDB6051
NDP6051
GCMOz
225si
T-50113
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ir 728p
Abstract: 728p Mark T92 BSR18A
Text: Discrete POWER & Signal Technologies S e m i c o n d u c t o r “ BSR18A & -, . , national BSR18A Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA.
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BSR18A
b501130
ir 728p
728p
Mark T92
BSR18A
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transistor 6D
Abstract: D040 MMBTH81 MPSH81 transistor BUV 92
Text: MPSH811MMBTH81 D is c r e te POV rE R & S i g n a l T ech r o lo g ie s National Semiconductor MPSH81 MMBTH81 S0T# B Mark: 3 D PNP RF Transistor This device is designed fo r general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA
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MPSH81
MMBTH81
b5D1130
D040a0fl
bSD1130
transistor 6D
D040
MMBTH81
MPSH81
transistor BUV 92
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BF245C
Abstract: BF245A BF256B BF244A BF244B BF244C BF245B BF256A BF256C BSR56
Text: <J CT> Oì <J> h- O) O) 0> o> ^ ^ 55 8 8 8 8 8 8 in in in 8 8 8 U. z S • s « p ll ^ £ i i in m N ip in in SL H h >8 s o 8 >8 2 2 u. a o o o o CN CM CM CM « 5 S r> r* r* in in in in <£><£><£> <0 CO CO <0 CO 3 3 4.5 4.5 4.5 in in in in in in in m in in in m
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BF244A
BF244B
BF244C
BF245A
BF245B
BF245C
BF256A
BF256B
BF256C
BSR56
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50113G
Abstract: BSR17A dc f 7403
Text: BSR17A Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " & BSR17A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.
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BSR17A
bSD113D
50113G
BSR17A
dc f 7403
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BF244A
Abstract: "N-Channel JFET" bf244c BF244B jfet s00 BF244
Text: " BF244A BF244B BF244C BF244A / BF244B / BF244C uctor D iscrete POWER &. Signal Technologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low capacitance. Sourced from Process 50.
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BF244A
BF244B
BF244C
L501130
"N-Channel JFET"
bf244c
jfet s00
BF244
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