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    B535 Search Results

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    B535 Price and Stock

    American Bright Optoelectronics BL-HB535A-TRB

    LED BLUE CLEAR 0805 SMD
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    DigiKey BL-HB535A-TRB Cut Tape 13,287 1
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    BL-HB535A-TRB Digi-Reel 13,287 1
    • 1 $0.41
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    BL-HB535A-TRB Reel 9,000 3,000
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    Mouser Electronics BL-HB535A-TRB 2,784
    • 1 $0.41
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    Master Electronics BL-HB535A-TRB 12,000
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    Infineon Technologies AG BB535E7904HTSA1

    DIODE VAR CAP 30V 20MA SOD-323
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    DigiKey BB535E7904HTSA1 Digi-Reel 12,000 1
    • 1 $0.34
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    BB535E7904HTSA1 Cut Tape 12,000 1
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    BB535E7904HTSA1 Reel 9,000 3,000
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    Mouser Electronics BB535E7904HTSA1 3,214
    • 1 $0.31
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    Newark BB535E7904HTSA1 Cut Tape 7,262 5
    • 1 $0.291
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    Rochester Electronics BB535E7904HTSA1 6,000 1
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    TME BB535E7904HTSA1 2,961 1
    • 1 $0.302
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    Ameya Holding Limited BB535E7904HTSA1 6,984
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    Chip One Stop BB535E7904HTSA1 Cut Tape 3,720
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    EBV Elektronik BB535E7904HTSA1 5 Weeks 3,000
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    Comchip Technology Corporation Ltd CZRB5357B-HF

    DIODE ZENER 20V 5W DO214AA
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    DigiKey CZRB5357B-HF Cut Tape 6,492 1
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    CZRB5357B-HF Digi-Reel 6,492 1
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    CZRB5357B-HF Reel 3,000 3,000
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    Mouser Electronics CZRB5357B-HF 1,473
    • 1 $0.49
    • 10 $0.405
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    • 1000 $0.24
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    NAC CZRB5357B-HF 3,000
    • 1 $0.55
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    Comchip Technology Corporation Ltd CZRB5350B-HF

    DIODE ZENER 13V 5W DO214AA
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    DigiKey CZRB5350B-HF Reel 6,000 3,000
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    Mouser Electronics CZRB5350B-HF 4,732
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    Bristol Electronics CZRB5350B-HF 2,209
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    NAC CZRB5350B-HF 3,000
    • 1 $0.55
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    • 10000 $0.237
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    Comchip Technology Corporation Ltd CZRB5352B-HF

    DIODE ZENER 15V 5W DO214AA
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    DigiKey CZRB5352B-HF Cut Tape 5,957 1
    • 1 $0.63
    • 10 $0.537
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    CZRB5352B-HF Digi-Reel 5,957 1
    • 1 $0.63
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    Mouser Electronics CZRB5352B-HF 5,619
    • 1 $0.63
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    • 1000 $0.264
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    Karl Kruse GmbH & Co KG CZRB5352B-HF 3,000
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    NAC CZRB5352B-HF 3,000
    • 1 $0.55
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    B535 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BA41-00727A

    Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m


    Original
    965GM BA41-00727A TP17351 7SZ08 TP16469 TP16470 LTST-C193TBKT-AC A3212ELH/HED55XXU12 MT539 TP16471 LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus PDF

    RTL8192

    Abstract: RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308
    Text: Point LABEL-LOGO BEZEL-ODD KNOB-ODD LENS-ODD HDD Componet BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A Object description LABEL-LOGO_SAMSUNG;NP,SEC,ARTPAPER+OPP COATING,-,-,-,-,W


    Original
    BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A BA43-00207A BA69-40003A BA44-00242A BA81-07036A BA42-00235A RTL8192 RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308 PDF

    Untitled

    Abstract: No abstract text available
    Text: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special


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    b53531 002MLi21 BF510 BF510) BF511) BF512) BF513) bb53531 D02MbE4 PDF

    B32655 MKP

    Abstract: b32655 Siemens B32655 MKP 0,68 x 630 V Siemens B32655 MKP MKP CAPACITORS
    Text: B535b05 0 0 3 7 b clS 3 • S I E G MKP Capacitors i SIEMENS AKTIENGESELLSCHAF B 32655 M7E D _ A-05-17-27 Metallized polypropylene capacitors - standard version Self-healing wound capacitor w ith face-end contacts, comprising a polypropylene dielectric. Built into flam e-retardant, rectangular plastic case, epoxy resin sealed to ensure


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    B535b05 B32655 MKP b32655 Siemens B32655 MKP 0,68 x 630 V Siemens B32655 MKP MKP CAPACITORS PDF

    Untitled

    Abstract: No abstract text available
    Text: • B535b05 Q0cÎS6ci4 S4b SIEMENS Mini PROFETÒ BSP 550 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load


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    B535b05 Q67000-S311 fl235bOS PDF

    Q67100-H5092

    Abstract: SDA 2516-5
    Text: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V


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    Q67100-H5092 00b3272 SDA 2516-5 PDF

    BUZ102SL

    Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
    Text: BUZ102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level


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    102SL BUZ102SL_ P-TQ220-3-1 Q67040-S4010-A2 BUZ102SL E3045A P-TQ263-3-2 Q67040-S4010-A6 E3045 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ PDF

    A4t 29 smd

    Abstract: smd a4t
    Text: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current


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    O-220 C67078-S1310-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A4t 29 smd smd a4t PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064


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    13N05L SPD13N05L P-T0252 Q67040-S4124 SPU13N05L P-T0251 Q67040-S4116-A2 S35bQ5 Q133777 SQT-89 PDF

    KT 117A

    Abstract: SMD CODE HBA
    Text: BSP 315P I nf ineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Typ Package BSP 315 P SOT-223 Ordering Code Q67042-S4004 Marking


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    OT-223 BSP315P Q67042-S4004 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T KT 117A SMD CODE HBA PDF

    Untitled

    Abstract: No abstract text available
    Text: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current


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    08N05L P-T0252 Q67040-S4134 P-T0251 SPD08N05L SPU08N05L Q67040-S4182-A2 S35bQ5 Q133777 SQT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package


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    BSS98 Q62702-S053 Q62702-S517 Q62702-S635 E6288 E6296 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6


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    BSP318S OT-223 Q67000-S127 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    kd smd transistor

    Abstract: No abstract text available
    Text: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated


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    28N03L SPD28N03L Q67040-S4139-A2 P-T0252 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L S35bG5 Q133777 SQT-89 kd smd transistor PDF

    smd diode code b54

    Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
    Text: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current


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    BUZ101S P-T0220-3-1 Q67040-S4013-A2 E3045A P-T0263-3-2 Q67040-S4013-A6 E3045 smd diode code b54 smd transistor c015 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-220 C67078-S1317-A2 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    SMD Transistor t30

    Abstract: transistor SMD t30
    Text: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level


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    30N03L SPP30N03L P-T0220-3-1 Q67040-S4737-A2 P-T0263-3-2 Q67040-S4143-A3 SPB30N03L S35bQ5 Q133777 SQT-89 SMD Transistor t30 transistor SMD t30 PDF

    28N05L

    Abstract: No abstract text available
    Text: Infineon h te c imPr° n ol o g i Ive<& SPD 28N05L Hosion “ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage '/DS Drain-Source on-state resistance f l DS on) 0.026 Si A 28 t> • Enhancement mode Continuous drain current


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    28N05L SPD28N05L SPU28N05L Q67040-S4122 P-T0251 P-T0252 Q67040-S4114-A2 S35bG5 Q133777 SQT-89 28N05L PDF

    Transistor SMD SM 942

    Abstract: No abstract text available
    Text: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30


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    30N03 67040-S 144-A -T0251-3-1 146-A S35bQ5 Q133777 SQT-89 B535bQ5 Transistor SMD SM 942 PDF

    Untitled

    Abstract: No abstract text available
    Text: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n


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    70N10L SPP70N10L SPB70N10L P-T0220-3-1 Q67040-S4175 P-T0263-3-2 Q67040-S4170 S35bQ5 Q133777 SQT-89 PDF

    transistor SMD 1gs

    Abstract: 46n03l smd 1Gs SD-46 Diode
    Text: , • - SPP 46N03L Inf ineon technology SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel ^D S Drain-Source on-state resistance . Enhancement mode f l D S o n Continuous drain current • Avalanche rated 30 V 0 .0 1 2


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    46N03L SPP46N03L P-T0220-3-1 Q67040-S4147-A2 SPB46N03L P-T0263-3-2 Q67040-S4743-A2 S35bQ5 Q133777 SQT-89 transistor SMD 1gs 46n03l smd 1Gs SD-46 Diode PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter


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    BUZ21 O-220 C67078-S1338-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS 129 Infine on technologies SIPMOS Small-Signal Transistor • • • • • • • 240 V 0.15 A ^DSfon 20 O N channel Depletion mode High dynamic resistance Available grouped in VGs th> V DS 1D Type Pin C onfigu ration Marking Tape and Reel Information


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    Q62702-S015 E6288 Q67000-S116 E6296: 235b05 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M x 4-Bit Dynamic RAM HYB 314400BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 ’C operating temperature • Fast Page Mode Operation • Performance: • -50 -60 -70 50 60 70 ns ^RAC RAS access time


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    314400BJ/BJL-50/-60/-70 P-SOJ-26/20-5 PDF