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    BUZ102SL Price and Stock

    Infineon Technologies AG BUZ102SL-E3045

    47 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUZ102SL-E3045 21,983
    • 1 $0.9675
    • 10 $0.9675
    • 100 $0.9675
    • 1000 $0.9675
    • 10000 $0.3386
    		Buy Now

    Infineon Technologies AG BUZ102SL

    47 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUZ102SL 18,038
    • 1 $2.3772
    • 10 $2.3772
    • 100 $2.3772
    • 1000 $0.9806
    • 10000 $0.8915
    		Buy Now
    BUZ102SL 2,140
    • 1 $2.3772
    • 10 $2.3772
    • 100 $2.3772
    • 1000 $0.9806
    • 10000 $0.8915
    		Buy Now

    Siemens BUZ102SLE3045A

    N CHANNEL POWER TRANSISTOR Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BUZ102SLE3045A 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    BUZ102SL Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUZ102SL Infineon Technologies SIPMOS Power Transistor Original PDF
    BUZ102SL Siemens Original PDF
    BUZ102SL Siemens SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Original PDF
    BUZ102SL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ102SL Infineon Technologies N-Channel Transistor Scan PDF
    BUZ102SL-4 Infineon Technologies SIPMOS Power Transistor Original PDF
    BUZ102SL-4 Siemens SIPMOS Power Transistor Scan PDF
    BUZ102SL-E3045 Infineon Technologies SIPMOS Power Transistor Original PDF
    BUZ102SLE3045 Infineon Technologies N-Channel Transistor Scan PDF
    BUZ102SLE3045A Infineon Technologies N-Channel SIPMOS Power Transistor Original PDF
    BUZ102SL-E3045A Infineon Technologies SIPMOS Power Transistor Original PDF
    BUZ102SLE3045A Infineon Technologies N-Channel Transistor Scan PDF

    BUZ102SL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Dual N- AND P-Channel Power FET TO-220 PACKAGE

    Abstract: 100S 101S 102S 103S 104S buz102 TRANSISTOR BSP 2000 smd transistor fh p-channel fet to-220
    Text: Power semiconductors Higher cell density, more rugged design MOS-based power semiconductors in S-FET technology can switch currents from a few milliamperes up to several hundred amperes at a voltage of 55 V. Extremely short source lengths make them commutationproof and more resistant to avalanche breakdowns. At the same time, their specific drain-source on


    Original     		PDF T0-220 OT-223 P-DSO-28 Dual N- AND P-Channel Power FET TO-220 PACKAGE 100S 101S 102S 103S 104S buz102 TRANSISTOR BSP 2000 smd transistor fh p-channel fet to-220

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    DIODE BUZ smd

    Abstract: Q67040-S4010-A5 s4010 BUZ102SL E3045 Q67040-S4010-A2 102SL
    Text: BUZ 102SL Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 47 A • Logic Level • dv/dt rated • 175 ˚C operating temperature


    Original     		PDF 102SL BUZ102SL P-TO263-3-2 Q67040-S4010-A6 BUZ102SL E3045 P-TO220-3-1 Q67040-S4010-A2 E3045A DIODE BUZ smd Q67040-S4010-A5 s4010 E3045 102SL

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    2N5101

    Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P
    Text: STI Type: 2N5050 Notes: Polarity: NPN Power Dissipation: 40 VCBO: 125 VCER: 125 ICBO: 125 ICBO ua: 500 hFE: 25 hFE A: 1.0 VCE: 1.0 VBE: 1.2 IC A: .75 COB: 250 fT: 10 Case Style: TO-213AA/TO-66 Industry Type: 2N5050 STI Type: 2N5052 Notes: *BVCEO Polarity: NPN


    Original     		PDF 2N5050 O-213AA/TO-66 2N5052 2N5055 O-206AA/TO-18: 2N5056 2N5101 BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    BUZ102SL

    Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
    Text: BUZ102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level


    OCR Scan     		PDF 102SL BUZ102SL_ P-TQ220-3-1 Q67040-S4010-A2 BUZ102SL E3045A P-TQ263-3-2 Q67040-S4010-A6 E3045 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ