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    B50113D Price and Stock

    Bivar Inc MLPS-B-5-0113-D0-6-PLW5-8MM

    LIGHT PIPE RIGID 5.00MM
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    DigiKey MLPS-B-5-0113-D0-6-PLW5-8MM Bulk 10
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    • 10 $18.841
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    Bivar Inc MLPS-B-5-0113-D0-6-PLW5-6MM

    MODULAR LIGHT PIPE SYSTEM, BEZEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLPS-B-5-0113-D0-6-PLW5-6MM Bag 10
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    Bivar Inc MLPS-B-5-0113-D0-6-PLW5-375

    MODULAR LIGHT PIPE SYSTEM, BEZEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLPS-B-5-0113-D0-6-PLW5-375 Bag 10
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    Bivar Inc MLPS-B-5-0113-D0-6-PLW5-500

    MODULAR LIGHT PIPE SYSTEM, BEZEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLPS-B-5-0113-D0-6-PLW5-500 Bag 10
    • 1 -
    • 10 $18.841
    • 100 $18.841
    • 1000 $18.841
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    Bivar Inc MLPS-B-5-0113-D0-6-PLW5-7MM

    MODULAR LIGHT PIPE SYSTEM, BEZEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLPS-B-5-0113-D0-6-PLW5-7MM Bag 10
    • 1 -
    • 10 $18.841
    • 100 $18.841
    • 1000 $18.841
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    B50113D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NSDU45

    Abstract: D40C5 B0517 NSD154 D40K1 T0-202 marking WM npn darlington transistor 150 watts NSD-U45 MPSa13 451
    Text: 40 Devices ; “ i f s'il : Darlington Transistors continued NPN h FE •c PNP 2N6724 ]> Max (Amps) Min 1 25,000 b50113D 003^534 ^CE(sat)® *C * •b lc Max 15,000 451 H P 0 (Amb) (MHz) mA (Volts) Max mA »«A Min 200 1.0 200 2mA 100 500 1.5 1A MNSCS


    OCR Scan     		bSD113D 2N6724 O-237 D40C4 T0-202 D40C5 NSD154 NSDU45 NSDU45 D40C5 B0517 NSD154 D40K1 marking WM npn darlington transistor 150 watts NSD-U45 MPSa13 451 PDF

    SOT 23 1ft

    Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
    Text: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*


    OCR Scan     		N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 OT-23 SOT 23 1ft 2N5484 2NS484 1Ft SOT23 transconductance 2N5485 2N5486 MMBF5486 PDF

    DIODE 3L2

    Abstract: Complementary MOSFET Half Bridge
    Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to


    OCR Scan     		NPS8852H b5D113Q DIODE 3L2 Complementary MOSFET Half Bridge PDF

    NDS8839H

    Abstract: Complementary MOSFET Half Bridge
    Text: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    OCR Scan     		NDS8839H bS0113D NDS8839H Complementary MOSFET Half Bridge PDF

    4-221

    Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
    Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		NDS9958 b501130 0Q400bl 4-221 transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET PDF

    TN2905A

    Abstract: No abstract text available
    Text: TN2905A Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r ~ TN2905A PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. S ee P N 29 0 7 A for characteristics.


    OCR Scan     		TN2905A TN2905A PDF

    2n5461

    Abstract: 2N5462 2N5461 equivalent 2N5460 Low noise audio amplifier MMBF5460 mmbf5461
    Text: S e m i c o n d u c t o r " MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 Mark: 6E /61U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    OCR Scan     		2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 2N5461 equivalent Low noise audio amplifier mmbf5461 PDF

    NDT3055L

    Abstract: 401H6
    Text: e» N a t i on a l M a rch 1 9 9 6 Semiconductor" NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode field effect transistors are produced using National's proprietary, high cel! density, D M O S technology.


    OCR Scan     		NDT3055L bSD1130 b50113D NDT3055L 401H6 PDF

    NDT014

    Abstract: lc 501130
    Text: National June 1996 Semiconductor" NDT014 N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancem ent m o d e pow er field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS tech no lo g y.


    OCR Scan     		NDT014 bS0113D GDMDD73 b50113D NDT014 lc 501130 PDF

    NDC7001C

    Abstract: VX25
    Text: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS


    OCR Scan     		NDC7001C tS0113G Q03T7T3 NDC7001C VX25 PDF

    1403

    Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
    Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.


    OCR Scan     		MMBD1401 OT-23 MMBD1404 UMBD1403 MMBD1405 b50113D 1403 R20 marking M3325 PDF

    BSS63

    Abstract: No abstract text available
    Text: BSS63 Discrete POW ER & Signal Technologies A National Semiconductor" BSS63 Mark: T3 PNP General Pupose Amplifier This device is designed for general purpose am plifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum RatinQS*


    OCR Scan     		BSS63 L501130 BSS63 PDF

    BC547 surface mount

    Abstract: BC548 T0-92 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97
    Text: Low Noise Amplifiers t.3E D Min Max mA MHz Min BC546 110 450 2 10 300 Typ T0-92(97) 1,2C BC846 110 0.01 10 300 Typ TO-236* 1,2C PNP NPN Package Notes 2 BC556 75 475 2 10 300 Typ TO-92(97) 1,2C BC856 125 475 2 10 300 Typ TO-236* 1,2C 2N2484 100 500 0.01 3


    OCR Scan     		tSD1130 BC546 BC846 T0-92 O-236* BC556 BC856 N3962 PN4249 PN4250A BC547 surface mount BC548 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97 PDF

    NDS9933

    Abstract: Transistor c 4138 LA 4138
    Text: National w j f May 1996 Semiconductor” NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor G en eral D e sc rip tio n F eatu res These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DM0S technology.


    OCR Scan     		NDS9933 bSD113D NDS9933 Transistor c 4138 LA 4138 PDF

    B23 zener diode

    Abstract: zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B
    Text: National Semiconductor Ontnhfir 1QQ1 NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		NDP505A/NDP505B, NDP506A/NDP506B hSG113D B23 zener diode zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B PDF

    NDH8447

    Abstract: No abstract text available
    Text: National Semiconductor May 1996 ” NDH8447 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m o d e p o w e r field - effect tran sisto rs are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.


    OCR Scan     		NDH8447 hS01130 NDH8447 PDF

    333 marking Diode

    Abstract: FDLL300 FDLL300A FDLL333
    Text: Discrete POWER & Signal Technologies Semiconductor"' FDH/FDLL 300/A / 333 C O L O R B A N D M A R K IN G D E V IC E LL-34 DO-35 1ST B A N D 2ND B A N D FD LL3 0 0 FD LL300A BRO W N BRO W N GREEN Y ELLO W FD LL3 3 3 BRO W N BLU E THE PLACEMENT O F THE EXPANSION GAP


    OCR Scan     		300/A DO-35 LL-34 FDLL300 FDLL300A FDLL333 MMBD1501/A-1505/A 333 marking Diode FDLL300A PDF

    bc2378

    Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
    Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi


    OCR Scan     		tS0113D J15511 SD1130 bc2378 box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633 PDF

    LD 1106 BS

    Abstract: NDS8426
    Text: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.


    OCR Scan     		NDS8426 RDS10N, bSG1130 LD 1106 BS NDS8426 PDF