B4015L
Abstract: MBR4015LWT
Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
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MBR4015LWT/D
B4015L
MBR4015LWT
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B4015LG
Abstract: diode code yw B4015L MBR4015CTL MBR4015CTLG marking code YW DIODE
Text: MBR4015CTL SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • http://onsemi.com Center−Tap Configuration Guardring for Stress Protection
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MBR4015CTL
MBR4015CTL/D
B4015LG
diode code yw
B4015L
MBR4015CTL
MBR4015CTLG
marking code YW DIODE
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B4015LG
Abstract: B4015L MBR4015CTL MBR4015CTLG SCHOTTKY BARRIER RECTIFIER aka
Text: MBR4015CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Packages are Available*
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MBR4015CTL
MBR4015CTL/D
B4015LG
B4015L
MBR4015CTL
MBR4015CTLG
SCHOTTKY BARRIER RECTIFIER aka
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B4015L
Abstract: No abstract text available
Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package Employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
MBR4015LWT/D
B4015L
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Untitled
Abstract: No abstract text available
Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
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Untitled
Abstract: No abstract text available
Text: MBR4015CTL SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Packages are Available*
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MBR4015CTL
MBR4015CTL/D
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B4015L
Abstract: dmbr4015ctl
Text: MBR4015CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • • • • • • Center−Tap Configuration Guardring for Stress Protection
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MBR4015CTL
B4015L
dmbr4015ctl
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B4015L
Abstract: MBR4015CTL
Text: MBR4015CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • Center–Tap Configuration Guardring for Stress Protection
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MBR4015CTL
r14525
MBR4015CTL/D
B4015L
MBR4015CTL
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B4015LG
Abstract: code onsemi Z Diode B4015L MBR4015CTL MBR4015CTLG
Text: MBR4015CTL SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Packages are Available*
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MBR4015CTL
MBR4015CTL/D
B4015LG
code onsemi Z Diode
B4015L
MBR4015CTL
MBR4015CTLG
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Untitled
Abstract: No abstract text available
Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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B4015L
Abstract: No abstract text available
Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
MBR4015LWT
B4015L
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motorola 039
Abstract: 033 motorola
Text: MOTOROLA Order this document by MBR4015LWT/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR4015LWT Motorola Preferred Device . . . using the Schottky Barrier principle this state–of–the–art device is dedicated to the ORing function in paralleling power supply and has the
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MBR4015LWT/D
MBR4015LWT
MBR4015LWT/D*
motorola 039
033 motorola
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4015L
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBR4015LWT/D SEMICONDUCTOR TECHNICAL DATA Advance Information M B R 4015L W T SWITCHMODE Power R ectifier . . using the Schottky Barrier principle this state-of-the-art device is dedicated to the ORing function in paralleling power supply and has the following features:
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MBR4015LWT/D
4015L
2PHX33778R-0
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rectifier diode 6 amp 400 volt
Abstract: rectifier diode 20 amp 400 volt 4015L 400 amp 20 volt rectifier Diode Marking
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M B R 4015LW T SWITCHMODE Power Rectifier M o to ro la Preferred D e vice . . . u sin g th e S c h o ttk y B a rrie r p rin c ip le th is s t a te - o f- th e - a r t d e v ic e is ded ica te d to th e O R ing fu n ctio n in p a ra lle ling pow e r supp ly and has the
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4015LW
MBR4015LWT
rectifier diode 6 amp 400 volt
rectifier diode 20 amp 400 volt
4015L
400 amp 20 volt rectifier
Diode Marking
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