Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC -CXSTRS/R F> 1 6367254 MOTOROLA SC DE|b3ti7254 XSTRS/R 96D 8 2 4 7 5 _ T ~ F □DÔ247T S | D ^ ? - 2 - 7 MAXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage
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OCR Scan
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b3ti7254
7007AB
MD7007F
MQ7007
D7007AB
MD7007
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motorola mt*n06e
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F SbE D b3ti7254 GDTGTlü 1 Order this data sheet by IRFZ44/D MOTOROLA l'T 73cM 3 S E M IC O N D U C T O R TECHNICAL DATA IR F Z 4 4 P o w e r F ie ld E f f e c t T r a n s i s t o r N-Channel Enhancement-Mode Silicon Gate TM OS This T M O S Pow er FET is designed for high voltage,
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OCR Scan
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b3ti7254
IRFZ44/D
IRFZ44
motorola mt*n06e
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2N5583
Abstract: 72s4 MXR5583 25CC
Text: MOTOROLA SC íXSTRS/R F> ñT 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F DE |b3ti7254 007^4^0 7 V'p-Zl — Z 3 89D 7 9 4 6 0 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5583 Die S ource Sam e as 2N5583 HIGH FREQUENCY RF TRANSISTOR P N P S IL I C O N M A X IM U M R A T IN G S
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OCR Scan
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MXR5583
2N5583
2N5583
72s4
MXR5583
25CC
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