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    2N5583 Search Results

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    2N5583 Price and Stock

    GENERIC 2N5583

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N5583 242
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    Advanced Semiconductor Inc 2N5583

    Bipolar Junction Transistor, PNP Type, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5583 46
    • 1 $19.5075
    • 10 $17.34
    • 100 $16.0395
    • 1000 $16.0395
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    Motorola Semiconductor Products 2N5583

    Bipolar Junction Transistor, PNP Type, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5583 15
    • 1 $19.5075
    • 10 $17.34
    • 100 $16.0395
    • 1000 $16.0395
    • 10000 $16.0395
    		Buy Now
    ES Components 2N5583 11
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    SSI 2N5583

    Bipolar Junction Transistor, PNP Type, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5583 13
    • 1 $19.5075
    • 10 $17.34
    • 100 $17.34
    • 1000 $17.34
    • 10000 $17.34
    		Buy Now

    2N5583 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5583 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=30 / Ic=0.5 / Hfe=25/100 / fT(Hz)=- / Pwr(W)=5 Original PDF
    2N5583 Great American Electronics Silicon Epitaxial-Planar Bipolar MW NPN transistor Scan PDF
    2N5583 Motorola The European Selection Data Book 1976 Scan PDF
    2N5583 Motorola European Master Selection Guide 1986 Scan PDF
    2N5583 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5583 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5583 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5583 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5583 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5583 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5583 Unknown Transistor Replacements Scan PDF
    2N5583 Unknown Transistor Replacements Scan PDF
    2N5583LP Semelab Screening Options Available =, Polarity = PNP, Package = TO39 (TO205AD), Vceo = 30V, IC(cont) = 0.5A, HFE(min) = 25, HFE(max) = 100, @ Vce/ic =V / 0mA, FT = -, PD = 5W Original PDF

    2N5583 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5583

    Abstract: No abstract text available
    Text: 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE MAXIMUM RATINGS IC 500 mA VCE -30 V PDISS 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C TJ -65 °C to +200 °C


    Original     		PDF 2N5583 2N5583

    2n5583

    Abstract: No abstract text available
    Text: 2N5583 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5583 O205AD) 19-Jun-02 2n5583

    Untitled

    Abstract: No abstract text available
    Text: 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE TO-39 MAXIMUM RATINGS IC 500 mA VCE -30 V PDISS 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C TJ


    Original     		PDF 2N5583 2N5583

    Untitled

    Abstract: No abstract text available
    Text: 2N5583 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5583 O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: zSztni-Conduakoi Lpi , Jna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Dimensions in mm (inches).


    Original     		PDF 2N5583 500mA 10fiA 100mA 150mA

    2N5583

    Abstract: No abstract text available
    Text: 2N5583 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • High Voltage Switching • High Frequency Amplifier Applications 0.89 max. (0.035)


    Original     		PDF 2N5583 O-205AD) -150mA 2N5583

    2n5583

    Abstract: lm3909
    Text: 2N5583 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits and Semiconductors — Product Line 1 of 1 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ|


    Original     		PDF 2N5583 2N5583 LM3909 LM3909N 1N4510 500ns)

    2N5583

    Abstract: TO39 package
    Text: 2N5583 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5583 O205AD) 1-Aug-02 2N5583 TO39 package

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    2N5583

    Abstract: No abstract text available
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5583 Silicon Epitaxial-Planar Bipolar MW NPN transistor Package Type: TO-39 ABSOLUTE IVAXIMUM RATINGS TCASE = 25°C SYMBOL Rating Collector-Emitter Voltage REB=10Q VcER Collector-Base Voltage VcBO Emitter-Base Voltage ^EBO


    OCR Scan     		PDF 2N5583 30Vdc 100mA 100mA, 300MHz 150mAdc, 15mAdc 00000I3 2N5583

    HA20

    Abstract: MXR5583
    Text: M O T O R O L A SC ÍXSTRS/R F} 6 3 6 7 2 5 4 MOTOROLA SC "ñT X S T R S / R F DE Jb3L.72S4 00714^0 7 89D 79460 V ' F ' Z ! — 2 -2 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MXR5583 Die Source Sam e as 2N5583 HIGH FREQUENCY RF TRANSISTOR PNP SILICON M AXIM UM RATINGS


    OCR Scan     		PDF MXR5583 2N5583 HA20 MXR5583

    2N5583

    Abstract: 72s4 MXR5583 25CC
    Text: MOTOROLA SC íXSTRS/R F> ñT 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F DE |b3ti7254 007^4^0 7 V'p-Zl — Z 3 89D 7 9 4 6 0 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5583 Die S ource Sam e as 2N5583 HIGH FREQUENCY RF TRANSISTOR P N P S IL I C O N M A X IM U M R A T IN G S


    OCR Scan     		PDF MXR5583 2N5583 2N5583 72s4 MXR5583 25CC

    2N5583

    Abstract: T0750
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5583 The RF Line 1C = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR P N P S IL IC O N . . d e sign e d for applications in high frequency am plifiers and non-saturated sw itch ing circuits. H igh gain-b an dw id th product


    OCR Scan     		PDF 2N5583 RF5583HXV 2N5583 T0750

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N5179

    Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 high gain PNP RF TRANSISTOR 2N4957 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors

    MRF965

    Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF965 2N5109 motorola motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943

    2N3866 MOTOROLA

    Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 2N5829 2N5031 MRF904 MRF571 RF572/M RF2369 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175