TO-206A
Abstract: BFY 83 BFY90T BFY 99 BFY90 MOTOROLA
Text: • MOTOROLA SC CXSTRS/R F MbE D b3fci72S4 G O T m a a MOTOROLA 4 ■MOTb T ■ SEMICONDUCTOR BFX89 BFY90 TECHNICAL DATA T h e R F L ine fT = 2 .0 G H z @ 1 0 m A HIG H FREQUENCY T R A N SISTO R S NPN SILICON HIGH-FREQUENCY TRANSISTORS N P N S IL IC O N . . . d e s ig n e d for V H F a n d U H F a p p lic a t io n s w h e r e h ig h -g a in , lo w *
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b3fci72S4
BFX89
BFY90
TO-206A
BFY 83
BFY90T
BFY 99
BFY90 MOTOROLA
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BCY791x
Abstract: bcy791 BCV79-VII BCY79X BCY79IX BCY79-X BCY79 BCY79-VIII BCY78 bcy78 MOTOROLA
Text: MOTOROLA SC XSTRS/R 12E D | F b3fci72S4 QGflt.M73 7 | r -y t - z I BCY78-VII, -Vili, -IX, -X BCY79-VII, -Vili, -IX, -X MAXIM UM RATINGS R a tin g Coliector-Em itter Voltage S ym b o l BCY 78 BCY 79 U n it VCEO 32 45 Vdc Co llector-Em ittar Voltage R B E 10 Ohm s
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BCY78-VII,
BCY791x
bcy791
BCV79-VII
BCY79X
BCY79IX
BCY79-X
BCY79
BCY79-VIII
BCY78
bcy78 MOTOROLA
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mosfet L 3055 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET
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OT-223
MMFT3055E
mosfet L 3055 motorola
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2N3946 MOTOROLA
Abstract: 2N3947 2N3946 2N3946 equivalent 2N3947 MOTOROLA
Text: M OTOROLA SC XSTRS/R F 12E D | b3b?254 G0flfc.3fl0 G | M A X IM U M R A T IN G S Symbol Value Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Rating Unit Ve b o 6.0 Vdc Collector Current — Continuous ic 200 mAdc
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2N3946,
2N3947
2N3946
2N3946 MOTOROLA
2N3946
2N3946 equivalent
2N3947 MOTOROLA
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MRF843
Abstract: MRF843F N75-5
Text: 12E 0 I b3b?ES4 G0fi?fltì 4 3 | /-3V l| MOTOROLA SC XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF843 MRF843F The RF Line N P N Silicon RF Pow er Transistors 15 W 806-960 MHz RF POW ER T R A N SIST O R S C O M M O N BA SE N PN SILICON . designed for 12.5 Volt UHF large-signal, common-base applications in industrial and
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MRF843
MRF843F
56-590-65-3B
MRF843F
N75-5
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MJH16032
Abstract: MJE16032 MJH16034 P6302 circuit 7403 u3 AM503 MJE16034 mje16
Text: MQTORCLA SC XSTRS/R F 12E 0 § b3fc,7SS4 000542=1 T | T -3 S -I3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16032 MJ E 16034 MJH16032 MJH16034 Designer's Data Sheet IMPIM Silicon Power Transistors Switchmode III Series T h e se tra n s is to rs are d esig n e d fo r h ig h -vo ltag e, hig h -sp eed , p o w e r s w itc h in g in in d u c
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221a-04
tq-220ab)
O-218AC
MJH16032
MJE16032
MJH16034
P6302
circuit 7403 u3
AM503
MJE16034
mje16
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2n5641
Abstract: No abstract text available
Text: MOT OROL A SC XSTRS/R 4bE F b3b?2S4 1> OtnMOßb MOTOROLA 1 ^ SEMICONDUCTOR TECHNICAL DATA 7 3 3 - 0 1 2N5641 The RF Line 7.0 W - 175 MHz R F PO W ER T R A N S IS T O R NPN SILIC O N N PN S IL IC O N R F P O W E R T R A N S IS T O R . . . designed prim arily for wideband large-signal am plifier stages in
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2N5641
b3b7254
2n5641
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