B3B75SM Search Results

B3B75SM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N4015 Abstract: 2N4015 MOTOROLA 2n4016 Contextual Info: M Q T OR CL A SC XSTRS/R F D \| b3b75SM DGflbBTS 7 \| M AXIM UM RATIN GS Symbol Value Unit Collector-Emitter Voltage VcEO 60 Vdc Collector 1 to Collector 2 Voltage Voltage Rating and Lead to Case VC1C2 ±200 ±200 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage	OCR Scan	b3b75SM 2N4015 2N4016 2N4015 MOTOROLA	PDF
transistor k 425 Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 \| BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED	OCR Scan	r-33-73 BU522 BU522A BU522B BU522) BU522A) BU522B) BU522A, transistor k 425 sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A	PDF
TZ 1167 Abstract: bu208D U/25/20/TN26/15/850/TZ 1167 Contextual Info: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 \| T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection	OCR Scan	b3b75SM TZ 1167 bu208D U/25/20/TN26/15/850/TZ 1167	PDF
MJF16006A Abstract: vqe 14e wMR918 MTP8P10 lr 2905 transistor AM503 MUR8100 P6302 MJF16006 TCA 700 y Contextual Info: motorola sc xstrs / r IME D I b3b75SM OOIGMB? 1 \| f Order this data sheet by MJF16006A/D MOTOROLA B SEMICONDUCTOR " P -3 3 -II TECHNICAL DATA MJF16006A Designer's Data Sheet Full Pak N PN S ilicon P o w er Transistor 1.0 kV Switchm ode III Series For Isolated Package Applications	OCR Scan	b3b75sm MJF16006A/D 33-II MJF16006A AN1040. C64449 MJF16006A vqe 14e wMR918 MTP8P10 lr 2905 transistor AM503 MUR8100 P6302 MJF16006 TCA 700 y	PDF
D2369 Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b75SM OO' i S b E M MOTOROLA T «flO Tb 3-JZZ5' SEMICONDUCTOR TECHNICAL DATA 0H0 PRELIMINARY DATA MMCM2369AHXV/HS (SINGLE) MD2369AFHXV/HS (DUAL) MQ2369AHXV/HS (QUAD) m m Discrete Military Operation PROCESSED TO MIL-S-19500/317	OCR Scan	b3b75SM MMCM2369AHXV/HS MD2369AFHXV/HS MQ2369AHXV/HS MIL-S-19500/317 MMCM2369A MD2369AF MQ2369A D2369	PDF
C4171 Abstract: MCI455 MJ6308 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 2N6308 AM503 MJ16006 MTP8P10 Contextual Info: M OTO RO LA SC XSTRS/R F MOTOROLA 1EE D SEM IC O N D U C T O R TECHNICAL DATA I Order this data sheet by MJ6308/D b3b?254 QOflSbSb Designer's Data Sheet S w itc h m o d e N P N Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p lication s	OCR Scan	MJ6308/D MJ6308 2N6308 2N6308 MJ6308 C4171 MCI455 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 AM503 MJ16006 MTP8P10	PDF
MTP10N06E Abstract: 221A-04 72SM AN569 MTM10N06E evod Contextual Info: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T \| 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s	OCR Scan	0Cn0G33 MTM10N06E 221A04 MTP10N06E MTP10N06E 221A-04 72SM AN569 MTM10N06E evod	PDF
mt 1389 de Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB Contextual Info: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B	OCR Scan	3b72S4 MM3735 MM3737 MIL-S-19500/395B O-116) mt 1389 de mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB	PDF
3203 MOSFET Abstract: MOTOROLA T3E IM40t AN569 MTM15N40E TMOS power FET motorola mosfet Contextual Info: MOTOROLA SC XSTRS/R F bfiE » • h3b.7ESM GQTflST3 T32 noTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM15IM40E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed for high voltage, high speed	OCR Scan	b3b7254 MTM15N40E -DDTfiS11) 1Q000 3203 MOSFET MOTOROLA T3E IM40t AN569 MTM15N40E TMOS power FET motorola mosfet	PDF
2N3720 Abstract: 2n3867 Contextual Info: MOTOROLA SC XSTRS/R 12E D \| F b 3 fc,7 2 S 4 Q 0 ÛMM 7 7 5 \| 2N3719, 2N3720 2N3867, 2N3868 2N6303 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON PNP POWER TRANSISTORS . designed for high-speed, medium-current switching and highfrequency amplifier applications.	OCR Scan	2N3719, 2N3720 2N3867, 2N3868 2N6303 2N3719 2N3867 2N3720 2n3867	PDF
mfw transistor Contextual Info: MOTOROLA SC XSTRS/R F 2bE D m {^ 7 2 5 1 * 00=10527 2 MOTOROLA SEM ICO NDUCTOR. .- . TECHNICAL DATA 'T - V S - iS 1 lt> mfw DM0 PRELIMINARY DATA MRH280NHXV, MRH280NHS PRO C ESSED TO MIL-S-19500 Discrete Military Operation RADIATION TOLERANT TRANSISTOR	OCR Scan	MRH280NHXV, MRH280NHS MIL-S-19500 70Vdc b3b75SM MRH240NHXV mfw transistor	PDF