Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC -CDIODES/OPTOJ ! I 6 3 6 7 2 5 5 MOTOROLA SC 34 ßF|b3b75S5 34C <DI O D E S / O PT O D03Û1Û3 3 | 38183 r - x t - n MMCF2221, MMCF2221A SILICON) MMCF2222, MMCF2222A FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS F lip -C h ip — General purpose N P N sw itching and a m p lifie r transistor
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b3b75S5
MMCF2221,
MMCF2221A
MMCF2222,
MMCF2222A
2N2221
CF2907,
CF2221
CF2221A
CF2222
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2N6576
Abstract: SILICON DICE motorola 2N6578
Text: MOTOROLA SC O I O D E S / O P T O } 6367255 MOTOROLA 34 SC DE|b3b75S5 D I O D E S /O P T O GD37ma 37942 D T '3 3 ~0 ( SILICON POW ER TRANSISTOR DICE (continued) 2C6056 DIE NO. — NPN LINE SOURCE — PL500.10 T his die provides perform ance equal to or better than that of
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b3b75S5
GD37ma
PL500
2C6056
2N6383
2N6384
2N6385
2N6576
2N6577
2N6578
SILICON DICE motorola
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CMOS 4560 motorola
Abstract: 74HC157 74hc157 on
Text: MOTOROLA SC Í L O G I O 05 m T| b3b75S5 00Û0B3S M T-é¿-2/-5í MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA MC54/74HC157 MC54/74HC158 Quad 2 -In p u t Data Selectors/ M ultiplexers J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CM OS The MC54/74HC157 and HC158 are identical in pinout to the LS157 and LS158.
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b3b75S5
MC54/74HC157
HC158
LS157
LS158.
HC157
HC158.
CMOS 4560 motorola
74HC157
74hc157 on
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC 6367255 34 -CDIODES/OPTO} MOTOROLA SC b3b75S5 0030204 7 DIODES/OPTO 34C 38204 D MICRO-T (continued) MMT75 — PNP MMT76 — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdensity packaging is required.
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b3b75S5
MMT75
MMT76
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MMT75
Abstract: MMT76 9.1 V
Text: MOTOROLA SC 6367255 -CDIODES/OPTO} MOTOROLA SC 34 b3b75S5 DIODES/OPTO 34C 0030204 38204 D MICRO-T (continued) MMT75 MMT76 — PNP — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdenslty packaging is required.
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b3b75SS
MMT75
MMT76
MMT75-PNP
MMT75
MMT76
9.1 V
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mjec15030
Abstract: transistor motorola parameters S transistor NPN mjec15031 2N6416 2N6418 5031-PNP 2N6417 MJE-15031 SILICON DICE motorola
Text: MOTOROLA [ SC 34 {D IO D E S /O PTO 6367255 MOTOROLA SC D [F|b3b75S5 DIODES/OPTO 34c SILICON POWER TRANSISTOR DICE (continued) DIE NPN PNP 37967 y. NO.MJEC15030—NPN LINE SOURCE — PL500.E532 0D37Tb7 DIE ^ NO.MJEC1 5031—PNP LINE SOURCE — PL500.E533
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b3b75S5
0D37Tb7
MJEC15030--
5031--PNP
PL500
2N6416
2N6417
D44H10
D44H11
mjec15030
transistor motorola
parameters S transistor NPN
mjec15031
2N6418
5031-PNP
MJE-15031
SILICON DICE motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage Symbol Value Unit Vdc VCES 30 C ollector-B ase Voltage VCBO 30 Vdc E m itter-B ase Voltage
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MPSW13
MPSW14
00T34b3
MPSW13
b3b7255
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mpf102
Abstract: mpf102 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N-Channel — Depletion MAXIMUM RATINGS Symbol Value VDS 25 Vdc Drain-Gate Voltage Vd G 25 Vdc Gate-Source Voltage Rating Drain-Source Voltage Unit vgs -2 5 Vdc Gate Current 'g 10 mAdc Total Device Dissipation @ Ta = 25°C
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O-226AA)
MPF102
b3b7255
mpf102
mpf102 equivalent
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MAD1103P
Abstract: mad1108P MAD130 MAD1107P MAD130P MAD1103 MAD130C 817 opto IFR 740 MAD1103F
Text: MOTOROLA SC DIODES/OPTO bêE » • b3b?255 DDÔ7H1] MAD130 MADI103 MAD1107 MAD1108 MOTOROLA <§ SEMICONDUCTORS P .O . B O X 2 0 9 1 2 • P H O E N IX . A R I Z O N A TÛD ■ M0T7 85036 DIODE ARRAY These diode arrays are m u ltip le diode ju n c tio n s fa b rica te d by a
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MAD130
MADI103
MAD1107
MADI108
C309M
MAD1103P
mad1108P
MAD1107P
MAD130P
MAD1103
MAD130C
817 opto
IFR 740
MAD1103F
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MLL5236B
Abstract: MLL5243B MLL5221B MLL5222B MLL5223B MLL5224B MLL5225B MLL5226B MLL5227B MLL5228B
Text: M O T O R O L A SC D I O D E S / O P T O 3TE D E9 b 3 b 7 B S S 00fi3fl41 1 E3I10T7 MLL5221B thru MLL5263B T -n -n E LE C TR IC A L C H ARACTERISTICS (T* = 25'C unless otherwise noted. Based on dc measurements at thermal equilibrium; case temperature maintained at 30 + 2°C. VF= 0.9 Max @ lF = 10 mA for all types.)
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b3b72SS
E3I10T7
MLL5221B
MLL5263B
MLL5222B
MLL5223B
MLL5224B
MLL5225B
MLL5226B
MLL5236B
MLL5243B
MLL5227B
MLL5228B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M C100LVEL29 M C100EL29 Dual Differential Data and Clock D Flip-Flop With Set and Reset The MC100LVEL29 is a dual m aster-slave flip flop. The device features fully differential Data and Clock inputs as well as outputs. The
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C100LVEL29
C100EL29
MC100LVEL29
MC100EL29
DL140)
b3b75S5
BR1330
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"marking nh"
Abstract: 1SMB10 1SMB10A 1SMB11 1SMB11A 1SMB12 1SMB12A 1SMB13 1SMB170 403A-01
Text: M O T O R O L A SC D IOD ES / OP T O 5SÉ b3L7555 DDÒIBET □ J> MOTOROLA Order this data sheet by 1SMB5.Ô/D T - a - 2 3 SEMICONDUCTOR piivjì TECHNICAL DATA 1SMB5.0, A Zener O vervoltage Transient Su p p re sso rs thru 1SM B170, A . . . this device is designed specifically for transient voltage suppression. The wide leads
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b3L7555
T-a-23
"marking nh"
1SMB10
1SMB10A
1SMB11
1SMB11A
1SMB12
1SMB12A
1SMB13
1SMB170
403A-01
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MGT01000
Abstract: CS thyristor cs 3-04 7623A MGT01200 pearson 411 1N6292 221A-04 SG diodes high speed low power thyristor Gate Turn-Off Thyristors
Text: MOTOROLA SC DIODES/OPTO k3b?2S5 0001103 =| • 25E D r - a s w f Gate Turn-Off Thyristors The GTO is a family of asym metric gate turn-off thyristors designed primarily for dc power switching applications such as motor drives, switching power supplies, inverters, or wherever a need exists for high surge current capabilities and fast
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GT01000
MGT01200
MGT01000
b3b72S5
mgt01000
1000m
mgt01200
1200m,
mgt01400
CS thyristor cs 3-04
7623A
pearson 411
1N6292
221A-04
SG diodes
high speed low power thyristor
Gate Turn-Off Thyristors
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SG DIODE
Abstract: ic Thyristor firing circuit GT01000 MGT01200 GTO MOTOROLA
Text: M O T O R O L A SC DIODE S/ OP TO h3b7'2SS GQail03 =| • 2SE D r - a s w f MGT01000 MGT01200 Gate Turn-Off Thyristors The GTO is a fam ily of asym m etric gate turn-off thyristors designed prim arily for dc pow er sw itching applications such as m otor drives, sw itching pow er supplies,
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GQail03
b3b75S5
MGT01000
MGT01200
MGT01000
1000M
MGT01200
1200M,
MGT01400
1400M,
SG DIODE
ic Thyristor firing circuit
GT01000
GTO MOTOROLA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO 5S E b3b7SSS D 0DÔ1337 T Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener Overvoltage Transient Su ppressors . . . the 1 .5 S M C 6 .8 se rie s is d e sig n e d to protect vo lta ge sensitive c o m p o n e n ts from high
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5SMC200,
fl/89
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MCR3918-2
Abstract: 79192 MCR3918
Text: M O T O R O L A SC -CDIODES/OPTOï 01 bBti7SS5 D O T T l ñ ñ i T MCR3818 Series MCR3918 Series Silicon Controlled Rectifier Reverse Blocking Triode Thyristor . . . d esig ned fo r in d ustrial and co n su m e r ap plications such as pow er su pp lies, battery ch arg ers, tem perature, m otor, light and w eld er controls.
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MCR3818,
MCR3918-2
79192
MCR3918
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC D I O D E S / O P T 0 b3L?555 OOÔ13Db T SSE D Order this data sheet by MUR3005W T MOTOROLA T ' i i ' O I _ • SEMICONDUCTOR ■ ■ ■ TECHNICAL DATA MUR3005W T thru Sw itchm ode Pow er Rectifiers . designed for use in switching power supplies, inverters and as free wheeling diodes,
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MUR3005W
O-247
340F-01
O-247AC
MUR3005WT
MUR3060WT
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