2N4351 MOTOROLA
Abstract: 3N170 3c169 DFM12 3N169
Text: MOTOROLA SC { D I O D E S / O P T O } 34 636 72 55 M O T O RO LA SC DIODES/OPTO DE|b3b755S CID3ÛD41 3^ c 38041 FIËLD-EFFECT TRANSISTORS DICE (continued) D T - JJT- Z - i 3C169 DIE NO. LINE SOURCE — DFM122 This die provides performance equal to or better than that of
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b3b755S
DFM122
2N4351
3N169
3N170
3N171
MMCS0122
3C169
2N4351 MOTOROLA
3c169
DFM12
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MUR406
Abstract: motorola MUR440 MUR450
Text: 05/27/97 15:03 From Motorola Design-NET Ph : 602-244-359T Fax: 602-244-6693 MOTOROLA S C DIODES/OPTO m E D • b3b755S OOÛbHb? MUR405 MUR410 MUR415 MUR420 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA To Lynn Murphy IbH MUR430 MUR440 MUR450 MUR460 MUR420. MUR440 and MUFHBO
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602-244-359T
b3b755S
MUR405
MUR410
MUR415
MUR420
MUR430
MUR440
MUR450
MUR460
MUR406
motorola MUR440
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motorola opto
Abstract: MMBC1622D6 MMBC1622D7 MMBC1622D8
Text: M O T O R O L A SC -CDIODES/OPTOJ i 6367255 ' * MOTOROLA DlT|b3b755S SC <D I O D E S / O P T O □□30201 34C 38 28 1 tv. r - %i - i j SOT23 continued) MMBC1622D6,7,8 DEVICE NO. SMALL-SIGNAL NPN TRANSISTORS TOP VIEW C I I • Designed for audio-frequency high-gain amplifier
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b3b75SS
MMBC1622D6
MMBC1622D7
MMBC1622D8
motorola opto
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MMBC1622D7
Abstract: No abstract text available
Text: M O T O R O L A SC -CDIODES/OPTO]- 6367255 ' * MOTOROLA 34 SC DlT|b3b755S □□30201 <D I O D E S / O P T O 34C 38 28 1 r- % i-ij >V • SOT23 continued) MMBC1622D6,7,8 DEVICE NO. SMALL-SIGNAL NPN TRANSISTORS TOP n C _ u • Designed for audio-frequency high-gain amplifier
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b3b755S
MMBC1622D6
MMBC1622D7
MMBC1622D8
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2N5271
Abstract: SILICON SMALL-SIGNAL DICE DEL406 SILICON DICE motorola 2N2330
Text: "MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC “ “ 3Ü D T I b3b755S <DIODES/OPTO> 34C 0030010 38010 S D SILICON SMALL-SIGNAL TRANSISTOR DICE continued MPSAC17 DIE NO. — NPN LINE SOURCE — DEL406 4Ek iP This die provides performance similar to that of the following device types:
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b3b755S
DEL406
2N2330
2N2331
2N5271
MPSA16
MPSA17
MPSAC17
SILICON SMALL-SIGNAL DICE
DEL406
SILICON DICE motorola
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2N2646 motorola
Abstract: 2N2647 2N2646 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
Text: M O T O R O L A SC D IOD ES / OP TO 95E D b3b755S QDÖQTQO b m T-iJ'U 2N2646 2N2647 P N Unijunction T ran sisto rs Silicon PN Unijunction Transistors . . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:
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b3b755S
2N2646
2N2647
2N2646 motorola
2N2647
SCR 2N2646
2N2646 Vp
motorola 2n2646
02B1
2N264
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW72LT1 NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter- Base Voltage Symbol Value Unit VCEO 45 Vdc v CBO 50 Vdc Ve b o 5.0 Vdc 'c 100 mAdc Collector Current — Continuous
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BCW72LT1
-236A
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1N3491
Abstract: motorola 1n3495 1N3491R 1N3495 1N3493 1N3492 MR327R 1N3494 N349 MR331
Text: NOTOROLA SC -CDIODES/OPTOJ 1 5 E J> I t,3t?ass 0071533 0 T -— 0 1 — 1 7 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t SILICON RECTIFIERS 25 AMPERE M E D IU M -C U R R E N T S IL IC O N R E C T IF IE R S 50-400 VOLTS DIFFUSED JUNCTION
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1N3491
1N3492
1N3493
1N3494
1N3495
motorola 1n3495
1N3491R
MR327R
N349
MR331
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t2406 MOTOROLA
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TM OS FET 700 mA 240 VOLTS This TM OS medium power field effect transistor is designed for
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MMFT2406T1
OT-223
b3b755S
t2406 MOTOROLA
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