Untitled
Abstract: No abstract text available
Text: 4bE D b3b72S4 GQTET? T • M0Tb"P33-3 | MOT OROL A SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6052HV Chip PNP Silicon Darlington Power Transistor DM0 unm Discrete Military Operation . . .designed for general-purpose am plifier and low-frequency switching applications.
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b3b72S4
P33-3
2C6052HV
2C6059HW
Rang1000
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Untitled
Abstract: No abstract text available
Text: 4bE D • b3b72S4 aOTERôl 1 ■HOTt"T=33-l"] MOTOROLA SC CXSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6193HV Chip PNP Silicon Medium-Power Transistor DMO JfJr.ji Utfuf . .for use in switching and wide-band amplifier applications. DÌSCTG tG • Saturation Voltage — 1.2 Vdc @ 5.0 Ade
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b3b72S4
2C6193HV
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MJ10016HX
Abstract: No abstract text available
Text: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall
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b3b72S4
MJ10016HX,
MJ10016HX
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bd529
Abstract: transistors bd525 BD530 B0525 BD525 BD525-1 BD525-5 BD526 BD527 BD528
Text: MOTOROLA SC 6367254 ÍXSTRS/R DF|b3b72S4 F> MOTOROLA. SC ÍXSTR S/R 96 D 8 0 6 0 7 F T DDflObO? S D - 3 3 - 0 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON A M PLIFIER TR A N SISTO R S 6 0 - 8 0 - 100 VOLTS 10 WATTS NPN SILICON AN N ULAR* A M P LIFIER TR A N S IS TO R S
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b3b72S4
BD525
BD527
BD529
BD526,
BD528,
BD530
B0525.
BD525-1.
bd529
transistors bd525
BD530
B0525
BD525-1
BD525-5
BD526
BD528
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MTM12N10
Abstract: 221A-06 25CC MTP12N10E
Text: MOTOROLA SC XSTRS/R F bflE D • b3b72S4 00TÔ57Û 72b »nOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M TP 12N 10E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silico n Gate •Motorola Preferred Device
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b3b72S4
MTM12N10
MTP12N10E
MTM12N10,
MTM12N10
221A-06
25CC
MTP12N10E
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md2369
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R 1SE F D § b3b72S4 G0flbS71 7 | -p M 3 ~ 2 .5 ' MHQ2369 MPQ2369 MHQ2369 f C A S E 632-08, STYLE 1 '] TO-116 M A X I M U M R A T IN G S Symbol Value U nit Collector-Emitter Voltage V cEO 15 Vdc Collector-Base Voltage V cB O 40 Vdc Emitter-Base Voltage
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b3b72S4
G0flbS71
MHQ2369
MPQ2369
O-116
MPQ2369
md2369
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MJ50BD45
Abstract: No abstract text available
Text: MOT OROL A SC XSTRS/R F 4bE D b3b72S4 0 0 ci b 4 4 4 b H0 T b Orcler this data sheet b y M PD 1204/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T - 5 2 - \ 3 - q o MPD1204 EM S D river M odule For Driving High Current Bipolar Power Modules The MPD1204 is designed to d rive high cu rre n t, b ip o la r p o w e r Energy M an a g e m e n t
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b3b72S4
1204/D
MPD1204
MJ50BD45
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539 MOTOROLA transistor
Abstract: LT4700 transistor rf m 2528 Transistor motorola 513 552 transistor motorola 52604 MOTOROLA 03460
Text: 12E 0 I b3b72S4 aoa?24S T | M OTGRCLA SC MOTOROLA T - U -X I XSTRS/R F SE M IC O N D U C T O R TECHNICAL DATA LT4700 The RF Line N P N Silicon High Frequency Transistor 1C = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . designed primarily for use in low noise, small-signal amplifiers in satellite down con
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b3b72S4
LT4700
539 MOTOROLA transistor
LT4700
transistor rf m 2528
Transistor motorola 513
552 transistor motorola
52604 MOTOROLA
03460
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EM- 546 motor
Abstract: 2N6545 2N6545 Motorola 2N6544
Text: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,
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b3b72S4
2N6545
EM- 546 motor
2N6545 Motorola
2N6544
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bfy50
Abstract: FY51
Text: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B | BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage
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b3b72S4
BFY52
b3b75S4
BFY50
37-rt
FY51-52
FY51
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2N869A
Abstract: 2N869A JAN 2N4453 2N869A JANTX TO206AA 313 Motorola
Text: MO T O R O L A SC X S TR S/ R F 12E D | b3b72S4 Q O Ö b a S 1» T-Z7-IS 2N869A M A X IM U M R A T IN G S R ating C o llector-E m itter Voltage Sym bol 2N869A 2N4453 U n it VcEO 18 18 Vdc Vdc 25 C o llector-E m itter Voltage VcES Collector-Base Voltage V cB O
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b3b72S4
2N869A
2N869A
2N4453
2N4453
2N869A JAN
2N869A JANTX
TO206AA
313 Motorola
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Motorola Transistor 3-252
Abstract: Motorola 3-252
Text: 4bE D • b3b72S4 QORHTHfl 3 ■ nOTf'FZl-Cft MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR) TECHNICAL DATA 2C3251AHV Chip PNP Silicon Small-Signal Transistor A IM »#####/ . .designed for dc to VHF amplifier and general-purpose switching applications. DiSCr&t&
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b3b72S4
2C3251AHV
unlX10-4
T-27-09
2C3251AHY
Motorola Transistor 3-252
Motorola 3-252
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transistor Bf 966
Abstract: MRF486 2204B 1N4997 221A-04 RF POWER TRANSISTOR NPN MOTOROLA LINEAR HF arco 429
Text: MO T O R O L A SC XSTRS/R 4bE T> F b3b72S4 00=14703 S MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF486 The R F Line NPN SILICON RF POWER TRANSISTOR 40 W (PEP) - 30 MHz . . d e s ig n e d p rim a rily fo r ap p licatio n as a h ig h -p o w e r linear a m p lifie r fro m 1.5 to 30 M H z, in single s id eb an d m o b ile , m a rin e
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MRF486
O-220AB
b3b72S4
transistor Bf 966
MRF486
2204B
1N4997
221A-04
RF POWER TRANSISTOR NPN
MOTOROLA LINEAR HF
arco 429
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MTA2N60E
Abstract: Motorola Transistor 3-252 MTM6N60 63386 MTH6N55 AN569 MTH6N60 Motorola Case 1-06 Motorola 3-252
Text: motorola sc -c x s t r s / r f > •=10 D E | b3b72S4 0DÛ33ÛL, fl | 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F 98D 6 3 3 8 6 T '3 MOTOROLA D q-13 SEMICONDUCTOR TECHNICAL DATA M TH6N55 M TH6N60 M TM 6N 60 Designer's Data Sheet Pow e r Field Effect T ran sisto r
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T-39W3
221D-02
MTA2N60E
31034T-0
MTA2N60E
Motorola Transistor 3-252
MTM6N60
63386
MTH6N55
AN569
MTH6N60
Motorola Case 1-06
Motorola 3-252
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 OOflbSöG Ö | MHQ3798 CASE 632-08, STYLE 1 TO-116 M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value U nit VCEO VCBO V eb O 40 Vdc Collector Current — Continuous
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b3b72S4
MHQ3798
O-116
2N3810
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2N10E
Abstract: MTM12N10
Text: MOTOROLA SC XSTRS/R F bfl E J> m b3b72S4 0 0 T ÔS 7 Û 72b » n O T b MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M T P 1 2N 10 E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T h e se T M O S Pow er F ET s are d e sign e d for m ed iu m voltage,
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b3b72S4
O-204AA)
97A-01
97A-03
97A-03
O-204AE)
2N10E
MTM12N10
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MD2219AFHXV
Abstract: md2219af MMCM2222AHXV MMCM2222AHXV/HS
Text: MOTOROLA SC XSTR S/R F 4bE » • b3b72S4 0012675 2 ■ flO T b '7 ^ 2 7 -O f MOTOROLA SEMICONDUCTOR! TECHNICAL DATA É&â DM0 MD2219AFHXV/HS (DUAL) MMCM2222AHXV/HS (SINGLE) Surface Mountable Small-Signal Transistors u /fiii Discrete Military Operation 50 Volt, 200 Milliampere Bipolar NPN
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b3b72S4
MD2219AFHXV/HS
MMCM2222AHXV/HS
MMCM2222A
MD2219AF
MMCM2222
MD2219AFHXV
MMCM2222AHXV
MMCM2222AHXV/HS
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MRF5109HX
Abstract: MRF510
Text: nOTOROLA SC X S TR S /R 4bE F D • b3b72S4 00R 2*î21 5 ■ MOTI» ^ 3 /- « 2 3 MOTOROLA SEMICONDUCTOR I TECHNICAL DATA MRF5109HX,HXV DM0 u/un NPN Silicon High Frequency Transistor Discrete Military Operation . .designed specifically for broadband applications requiring good linearity. Usable as a
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b3b72S4
MRF5109HX
MRF510
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TRANSISTOR mj900
Abstract: MJ901 MJ900 mj1001
Text: m o to ro la sc x s trs /r 12E f D I b3b72S4 0004^73 b | 7 ^3 3 - 3 / r - 3 3 '2 8 PNP MJ900, MJ901 MOTOROLA SEMICONDUCTOR NPN TECHNICAL DATA MJ1000, MJ1001 8.0 AMPERE D A R L IN G TO N POWER TRANSISTO RS C O M PLEM EN TA R Y SILICO N M EDIUM -POW ER C O M PLEM ENTARY
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b3b72S4
MJ900,
MJ901
MJ1000,
MJ1001
MJ900
MJ1000*
MJ901,
MJ1001
TRANSISTOR mj900
MJ901
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CA2850R
Abstract: CA2851R MOTOROLA wideband hybrid amplifiers MOTOROLA wideband hybrid CA2850
Text: MOTOROL A SC XSTRS/R F 4bE D • b3b72S4 OGRSHf i O S ■ MOTb -¡^ 7 ^ - 0 9 -0 1 MOTOROLA m SEM IC O N D U C T O R TECHNICAL DATA The RF Line W id e b an d Linear A m p lifie rs . d e sign e d for am plifier applications in 50 to 100 o h m sy ste m s requiring w ide
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b3b72S4
-32dB
CA2850R
CA2851R
MOTOROLA wideband hybrid amplifiers
MOTOROLA wideband hybrid
CA2850
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iskaa
Abstract: chip die npn transistor
Text: 4bE » • b3b72S4 ÜQTSRSS Q ■ H 0 T b T - 3 > ^ \ MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR ■ h h h b h b h h b h TECHNICAL DATA 2C3501HV Chip NPN Silicon. Small-Signal Transistor A IM »ff# ff# . .designed for general-purpose switching and amplifier applications.
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b3b72S4
2C3501HV
iskaa
chip die npn transistor
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MTW54N05E
Abstract: Mott diode sc 3467
Text: MOTOROLA SC XSTRS/R F bfiE D • b3b72S4 OOSflflbl 17S ■MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TM O S E-FET P ow er Field E ffe c t Transistor M TW 54N 05E M o to ro la P re fe rre d D evice N-Channel Enhancem ent-M ode Silicon G ate
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b3b7254
MTW54N05E
Mott diode
sc 3467
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Untitled
Abstract: No abstract text available
Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,
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b3b72S4
MJ10014
MJ10014
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SC X S T R S/ R F 1SE D | b3b72S4 QOÖbbQO T j| M A X IM U M RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage Ve b o 12 Vdc Collector Current — Continuous 'c 300 mAdc
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b3b72S4
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