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    DIN 46238

    Abstract: No abstract text available
    Text: MOSAIC SEM IC ONDUCTOR INC S3E D b3S337T 0001370 ÔT1 IMOC 7 ^*4 6 -a s -1 \ molate f M e g x 4 M o n o tith ic D R A M Mosaic Semiconductor MDM41000-80/10/12/X0179 Issue 1.0: September 1992 ADVANCE PRODUCT INFORMATION 1,048,576 x 4 CMOS High Speed Dynamic RAM


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    PDF b3S337T MDM41000-80/10/12/X0179 MIL-STD-883 00013flD MDM41000WMB-80/X0179 MIL-STD-883, DIN 46238

    Untitled

    Abstract: No abstract text available
    Text: mosaic 512K x 32 FLASH MODULE PUMA 2/67/77F16006/A-80/90/12/15 semiconductor, inc. Issue 4 .0 : Novem ber 1996 Description Features Mosaic offers a flexible range of high density • 16 Megabit CMOS 5.0V operation only FLASH • Modules in industry standard packages. These


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    PDF 2/67/77F16006/A-80/90/12/15 512Kx32,

    Untitled

    Abstract: No abstract text available
    Text: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is


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    PDF PUMA67E1001/A-90/12 ThePUMA67E1001/AisalMbitCMOS of90and MIL-STD-883orD0 MIL-STD-883 32Kx32 as64Kx 16and 128Kx8 PUMA67

    Untitled

    Abstract: No abstract text available
    Text: 1Meg x 4 Monolithic DRAM m o l a t e MDM41000-80/10/12 Issue 3.3 : October 1993 S e m ic o n d u c to r 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns 5 Volt Supply ± 10% 1024 Refresh Cycles 16 ms CAS before RAS Refresh


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    PDF MDM41000-80/10/12 b3S3371 00053m MDM41000WMB-10 MIL-STD-883, MIL-STD-883 b3S337T

    Untitled

    Abstract: No abstract text available
    Text: 512K X 8 SRAM molaic MS8512FK-45/55 Issue 3.1 : September 1993 S e m ic o n d u c to r Pin Definition 524,288 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 45/55 ns JEDEC Standard 32 pin DIL footprint Operating Power 1050 mW typ. Low Power Standby


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    PDF MS8512FK-45/55 000223k.

    Untitled

    Abstract: No abstract text available
    Text: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO


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    PDF b35337^ 800jiW MS8256RKXAL 100ns 120ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: MOSAIC SEMICONDUCTOR INC S3E D • b35337T D001B3fl 525 « M O C 256K x 8 CMOS SRAM molaic M S M 8 2 5 6 -4 5 /5 5 /7 0 Issue 2.1 :August 1992 M osaic PRELIMINARY Sem iconductor Inc. r 262,144 x 8 CMOS High Speed Static RAM A Pin Definition Package Type ‘S \V


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    PDF b35337T D001B3fl 700mW 20jiW MIL-STD-883 MSM8256-4 MSM8256SLMB-45

    LM 7420

    Abstract: No abstract text available
    Text: 512K x 8 FLASH mosaic MFM8516-80/90/12/15 Issue 4.1: March 1997 semiconductor, inc. 524,288 bit FLASH EEPROM Features Description • 4 Megabit FLASH memory. The MFM8516 is a 4 Megabit CMOS 5.0V only FLASH Monolithic memory organised as 512K X 8. Access times of 80, 90,120 and 150 ns are


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    PDF MFM8516 b3S337T 002Lic MFM8516GMB-80E MIL-STD-883 512Kx b35337T LM 7420

    7420 ic details

    Abstract: pin diagram ic 7420 IC 7420 function ic 4026 IC 4026 pin diagram 7420 ic
    Text: 32K X 8 EEPROM mosaic MEM832-20/25 Issue 4.1 : June 1996 semiconductor, inc. 32,768 x 8 Non-volatile CMOS EEPROM Description The MEM832 is a 262,144 bit Non-Volatile CMOS EEPROM organised as a 32K x 8 with access times of 200 or 250 ns. The device features hardware and software data


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    PDF MEM832 MILSTD-883. MEM832-20/25 b353371 MEM832VLMB-20 0002b0? 7420 ic details pin diagram ic 7420 IC 7420 function ic 4026 IC 4026 pin diagram 7420 ic

    ci 7420

    Abstract: No abstract text available
    Text: mosaic 128Kx 32 FLASH MODULE PUMA2F4001-15/17/20 Issue4.0: July 1995 semiconductor, inc. Description 4,194,304 bit CMOS FLASH Memory Module The PUMA 2F4001 is a 4 M b it CMOS 5.0V only FLASH memory in a 66 pin ceramic PGA pack­ age, which is configerable as 8 , 1 6 , 3 2 bit wide


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    PDF PUMA2F4001 150ns, 170nsand 200nsareavailable 128Kx PUMA2F4001-15/17/20 b3S337c 00D24bl PUMA2F4001MB-15 ci 7420

    02VO

    Abstract: T 1892 equivalent
    Text: MOSAIC SEMICONDUCTOR INC 4fc.E D b 3 S 3 3 7 ci o c i a i c m mofaic o b im o c 128KX0 SRAM MSM8128X-45/55/70 Issue 3.1: April 1992 Mosaic Semiconductor f Pin Definition Inc. 131,072 x 8 CMOS High Speed Static RAM Features NC A16 A14 1 2 3 A12 4 5 A7 A6 A5


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    PDF b3S337c 128KX0 MSM8128X-45/55/70 MIL-STD-883D CA92121 02VO T 1892 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 128Kx 32 FLASH Module molaic PUMA 2F4001 -12/15/20 Issue 1.1 rNovember 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r 4,194,304 bit CMOS FLASH Memory Pin Definition Features 1 o 08 o 09 o 010 o A14 o A16 o A11 o Access Times of 120 /150 /200 User Configurable as 8 / 1 6 / 3 2 bit wide output.


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    PDF 128Kx 2F4001 103Cycles MIL-STD-883 b3S337T 2F4001-12/15/20 2F4001MB-20 MIL-STD-883C

    Untitled

    Abstract: No abstract text available
    Text: MOSAIC SEMICONDUCTOR INC B 3E D • bBSBBTI G001222 Ibfl ■ HOC T~- H 6 mol aie Í2 8 K X 8 Y SRAM MSM8128X-85/10/12 Issue 3.0 : October 1992 Mosaic Sem iconductor f Pin Definition NC A16 A14 A12 A7 A6 AS A4 A3 A2 A1 AO DO D1 D2 GNO 131,072 X 8 CMOS High Speed Static RAM


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    PDF G001222 MSM8128X-85/10/12 MIL-STD-883 32pin0

    Untitled

    Abstract: No abstract text available
    Text: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.


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    PDF MFM8T516-90/12/15 MFM8T516 0002b42 MFM8T516SMB-90 MIL-STD-883. 8T516 512Kx b3S3371 00D2b43

    d2539

    Abstract: D1959 A3S33 al puma
    Text: MOSAIC S E M I C O N D U C T O R INC 40E D EB a3S33?T 0 0 0 0 S 7 7 4 ^jNOC 7 ^ V 6 -/? - 2 ? PUMA 2U400Q PUMA 2U4000-90/12/15 Issue 1.0 : November 1990 Mosaic Samtconduclor Inc. ADVANCE PRODUCT INFORMATION /" ~ ' Pin Definition 4,194,304 bit CMOS High Speed UV EPROM


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    PDF a3S33 2U400Q 2U4000-90/12/15 2U4000MB-12 U4000 128Kx32 CA92121 2714S6S d2539 D1959 al puma

    Untitled

    Abstract: No abstract text available
    Text: MOSAI C S E M I C O N D U C T O R INC 53E ]> • b 3 S 3 3 7 T 0 G D 1 2 4 5 7b£ B I M O C 256 K x 8 SRAM moXaic MS8256RKX A-55/70 Issue 1.0 : June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition


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    PDF MS8256RKX

    Untitled

    Abstract: No abstract text available
    Text: 4Meg x 1 Monolithic DRAM molate M DM 14000-80/10/12 Issue 3.2 : September 1993 S e m ic o n d u c to r 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP,20 & 24 Pin VIL 5 Volt Supply ±10% 1024 Refresh Cycles 16 ms


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    PDF MIL-STD-883 14000VM MIL-STD-883 00QE331

    Untitled

    Abstract: No abstract text available
    Text: MOSAIC S E M I C O N D U C T O R INC LIE ]> h 35337•= D D G n ? 2 QbT * M O C 128K X 8 SRAM Module moXaic PUMA 67S4000-85/10/12 Issue 1.0 : January 1993 ADVANCE PRODUCT INFORMATION Mosaic Semicondu x- \


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    PDF 67S4000-85/10/12 MIL-STD-883 S4000 128Kx32 256Kx16 512Kx8)

    Untitled

    Abstract: No abstract text available
    Text: / 2^ < ^ mosaic P U M A 2U4000 PUMA2U4000-12/15 semiconductor, inc. Issue4.1 : June 1995 Description 4,194,304 bit CMOS UV EPROM The PUMA2U4000 is a 4 M bit CMOS High Speed UV EPROM in a 66 pin PGA package with access ti mes of 120ns and 150ns. The output width is userconfigerable a s 8 ,16 or 32


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    PDF 2U4000 PUMA2U4000-12/15 PUMA2U4000 120ns 150ns. MIL-STD883. PUMA2U4000MB-12 U4000

    Untitled

    Abstract: No abstract text available
    Text: mosaic 32K X 32 SRAM MODULE semiconductor, inc. PUMA 2S1000-12/15 Issue 4 .2 : June 1996 Description The PUMA 2S1000 is a 1Mbit high speed static RAM organised as 32K x 32 in a 66 pin PGA package. Access times of 120ns or 150ns are available. The devices has a user configurable


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    PDF 2S1000-12/15 2S1000 120ns 150ns MIL-STD-883. b3S337T 2S1000LMB-12 128Kx8

    Untitled

    Abstract: No abstract text available
    Text: 512K X 8 SRAM Module molaic PUMA 67S16000-35/45/55 Issue 1.0 : May 1994 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 16,777,216 bit CMOS High Speed Static RAM g S < S! 3 3 sÜS fls fe S S 3 3 5 I Features Fast Access times of 35/45/55 ns.


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    PDF 67S16000-35/45/55 MIL-STD-883 S16000 512Kx32 D0G5547 CA92121

    Untitled

    Abstract: No abstract text available
    Text: MOSAIC SEMICONDUCTOR INC 4DE D O b3S33?T 0000443 S HMOC T -4 Ù -J 3 -2 7 32K X 8 EEPROM MEM832V/J-85/10/12 Issue 1.0 : February 1990 ADVANCE PRODUCT INFORMATION Pin Definitions 32,768 x 8 CMOS EEPROM Features A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Very Fast Access Times of 85,100,120 ns


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    PDF b3S33 MEM832V/J-85/10/12

    TEESV

    Abstract: D8-14 2F1600 in1010
    Text: 512K x 32 FLASH MODULE molate PUM A 2 F 16000- 15/ 20/25 Issue 1.1 : May 1994 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc 16,777,216 bit CMOS FLASH Memory Module Features Fast Access Times of 150/200/250 ns. 66 pin Ceramic PGA Package. User Configurable as 32 /16 / 8 bit wide.


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    PDF 10jis MIL-STD-883, A0-A18- 512Kx8 b3S337T 2F16000-15/20/25 2F16000MB-15 MIL-STD883 16Mbit, TEESV D8-14 2F1600 in1010

    pinout 7420

    Abstract: No abstract text available
    Text: 128Kx 32 EEPROM Module mosaic PUMA67E4005/A-15/17/20 Issue4.0 : October 1995 semiconductor, inc. Description 4 ,1 9 4 ,3 0 4 bit CMOS EEPROM Module The P U M A 6 7 E 4 0 0 5 /A is a 4M b it CMOS EEPROM module organised as 128k x 32 in a 6 8 pin JEDECJleaded Ceramic Surface Mount Substrate. The output


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    PDF PUMA67E4005/A 200ns. MIL-STD-19 PUMA67E4005/A15/17/20 PUMA67E4005AMB-15 150ns 170ns MIL-STD-883. 128Kx32 512Kx8 pinout 7420