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    ULTRA HQX

    Abstract: MS62256L-10 MS62256 MS62256L-12 MS62256L-70 MS62256L-70FC MS62256L-85 T-46 ms62256l-70pc MS62256L10PC
    Text: S4E » b3533Tl 00D13TÏ 311 MOSEL IMOVI MS62256 32K x 8 CMOS Static RAM MOSEL-VITELIC r r -4 1 0 -2 3 -1 3 » FEATURES DESCRIPTION • High-speed - 70/85/100/120 ns The MOSEL M S62256 is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and


    OCR Scan     		PDF b3533Tl DDD13TÃ MS62256 MS62256L 385mW MS62256 144-bit MS622iod, 500mV MS62256L-70FC ULTRA HQX MS62256L-10 MS62256L-12 MS62256L-70 MS62256L-85 T-46 ms62256l-70pc MS62256L10PC

    kexz

    Abstract: No abstract text available
    Text: MOSEL-VITELIC b2E » MOSEL-VITELIC • b3533Tl GGGS33L. GES ■ M O V I V104J232, V104J236 512K X 32, 512K x 36 SIMM PRELIMINARY Features Description a 524,288 x 32 bit or 524,288 x 36 bit The V104J232 Memory Module is organized as 524,288 x 32 bits in a 72-lead single-in-line module.


    OCR Scan     		PDF b3533Tl GGGS33L. V104J232, V104J236 72-lead V104J232 QDQE34A 104J232/236 kexz

    weitek

    Abstract: 80386 chipset block diagram of 80386 microprocessor 82c331
    Text: flOSEL-VITELIC 4ÔE D MOSEL • b3533Tl OODlOb? 3 ■ UOVI Product Brief MS82C330 Cache Chipset for 80386 Systems with Write-Thru Cache FEATURES Quad fetch mode uses 16 byte subblocks for improved hit rate - Demand word fetch first strategy reduces miss penalty


    OCR Scan     		PDF b3533Tl MS82C330 MS82C331 MS82C332 MS82C333 64Kbyte PID035 weitek 80386 chipset block diagram of 80386 microprocessor 82c331

    Untitled

    Abstract: No abstract text available
    Text: S4E J> b3533Tl D0D1377 7SQ • MOVI MOSEL MS6264 8K x 8 CMOS StaticRAM n O S E L - V l T E L I C FEATURES DESCRIPTION • Available in 70/100 ns Max. The MOSEL MS6264 is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The


    OCR Scan     		PDF b3533Tl D0D1377 MS6264 MS6264 495mW S6264-70PC P28-1 S6264-70FC S28-2

    Untitled

    Abstract: No abstract text available
    Text: SME » b3533Tl DDDmOb 3fll MOSEL novi MS62256C 32K x 8 CMOS Static RAM nO-SEL-VITELIC FEATURES DESCRIPTION • High-speed - 70/100/120/150 ns The MOSEL MS62256C is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and operates from a single 5 volt supply. It is built with


    OCR Scan     		PDF b3533Tl MS62256C MS62256C 144-bit 28pin 440mW MS62256C) MS62256C-70PC P28-4

    7202A

    Abstract: No abstract text available
    Text: M OSEL V ITEU C MS7200U7201AL/7202AL 256x9,512x9, 1Kx9 CMOS FIFO Features Descriptions • First-In/First-Out static RAM based dual port memory ■ Three densities in a x9 configuration ■ Low power versions ■ Includes empty, full, and half full status flags


    OCR Scan     		PDF MS7200U7201AL/7202AL 256x9 512x9, MS7200L/7201AL/7202AL MS7200-25NC MS7200-25JC MS7200-25FC MS7200-35NQ MS7200-35JC MS7200-35FC 7202A

    Untitled

    Abstract: No abstract text available
    Text: M O SEL VITELIC V53C311616500 3.3 VOLT 1 M X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, (^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, fcc)


    OCR Scan     		PDF V53C311616500 16-bit cycles/64 42-pin 50/44-pin V53C311616500 G0G4151 00QM1S2

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V53C316580500 3.3 VOL T 8 M X 8 EDO PA GE MODE CMOS DYNAMIC RAM 40 50 60 Max. RAS Access Time, tRAC 40 ns 50 ns 60 ns Max. Column Address Access Time, (tcM) 20 ns 25 ns 30 ns Min. EDO Page Mode Cycle Time, (tPC) 16 ns 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)


    OCR Scan     		PDF V53C316580500 V53C316580500 cycles/64 32-pin

    V53C8256H

    Abstract: No abstract text available
    Text: MOSEL VITELIC V53C8256H ULTRA-HIGH PERFORMANCE, LOW POWER 256KX 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 18 ns 20 ns 22 ns 24 ns


    OCR Scan     		PDF V53C8256H 256KX V53C8256H 24-pin 26/24-pin

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO MS6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL MS6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The


    OCR Scan     		PDF ta3S33Tl MS6264A MS6264A S6264AL-45N P28-2 S6264AL-45P P28-1 S6264AL-45S S28-1 S6264AL-55N

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C818H H IG H PERFORM ANCE 5 1 2 K X 16 EDO PA GE MODE CMOS DYNAM IC RAM HIGH PERFO RM ANC E PRELIM INARY 30 35 40 45 50 Max. RAS Access Time, tRAc 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (^ aa) 16 ns 18 ns


    OCR Scan     		PDF V53C818H 16-bit 40-Pin 40/44L-Pin V53CB18H

    Untitled

    Abstract: No abstract text available
    Text: M O S E L VÊTEL IC V53C8256H U LTR A -H IG H PERFO RM ANCE, L O W PO W ER 2 5 6 K X 8 B IT F A S T P A G E M O D E CM O S D YN A M IC R A M H IG H P E R F O R M A N C E Max. RAS Access Time, tRAC 4 5 /4 5 L 5 0 /5 0 L 5 5 /5 5 L 6 0 /6 0 L 45 ns 50 ns 55 ns


    OCR Scan     		PDF V53C8256H 115ns 8256H

    Untitled

    Abstract: No abstract text available
    Text: bEE » MOSEL-VITELIC MOSEL- VITELIC • baSBB^l DDGSOSb 170 ■ MOVI V53C404F HIGH PERFORMANCE, LOW POWER 1 M X 4 BIT FAST PAGE MODE CMOS D YNAMIC RAM H IG H P E R F O R M A N C E V 5 3 C 4 0 4 F Max. RAS Access Time, tRAf. PRELIMINARY 6 0 /6 0 L 7 0 /7 0 L


    OCR Scan     		PDF V53C404F 404FL

    Untitled

    Abstract: No abstract text available
    Text: nOSEL-VITELIC bSE ]> • b3S33Tl G0 Dlfl2ö b?b M M O V I V53C256A FAMILY HIGH PERFORMANCE, LOW POWER 2 5 6 K X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM MOSEL- VITELIC H IG H P E R F O R M A N C E V 5 3 C 2 5 6 A 6 0 /6 0 L 7Q /70L 8 0 /8 0 L 1 0 /1 0 L 60 ns


    OCR Scan     		PDF b3S33Tl V53C256A

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V43648Y04V C TG-75 3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM Features PRELIMINARY The V 4 3648Y 04V (C )T G -75 memory module is organized 8 ,388,608 x 64 bits in a 144 pin S O D IM M . The 8M x 64 memory module uses 8 Mosel-Vitelic 4M x 16 SD R A M . The x64 modules


    OCR Scan     		PDF V43648Y04V TG-75 PC133 3648Y TG-75-04

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC INC. preliminary M SS2105/S3205/S4305/S6605 August 1996 2 1 '7 3 2 '7 4 3 '7 6 0 " V O IC E R O M Features Single power can operate at 2.4V through 6.0V. Current output could drive 8 ohm speaker with a transistor, Vout could drive buzzer directly.


    OCR Scan     		PDF SS2105/S3205/S4305/S6605 55500h) S6605 80000h) PID24S*

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C8257H U LTR A -HIG H SPEED, 256KX 8B IT P A G E M O D E WITH E X TE N D E D DATA O U T P U T ED O A N D C A S B U R S T M O D E CM O S D YN A M IC R A M PR E LIM IN A R Y 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, Orac)


    OCR Scan     		PDF V53C8257H 256KX 45/45L 50/50L 55/55L 60/60L V53C8257H VS3C8257H

    Untitled

    Abstract: No abstract text available
    Text: M O SE L VITELIC PRELIMINARY V62C518256 32Kx8 BIT STATIC RAM Features Description • High-speed: 35,45, 55, 70 ns ■ Ultra low DC operating current of 5mA Max. ■ Low Power dissipation: TTL Standby: 3mA (Max.) CMOS Standby: 20n.A (Max.) ■ Fully static operation


    OCR Scan     		PDF V62C518256 32Kx8 28-pin V62C518256 144-bit b3533Tl

    Untitled

    Abstract: No abstract text available
    Text: M O SEL VTTEUC PRELIMINARY V104J232 512K x 32 SIMM Features Description 524,288 x 32 bit organizations Utilizes 256K x 4 CMOS DRAMs Fast access times 70 ns, 80 ns, 100 ns Fast Page mode operation Low power dissipation _ CAS before RAS refresh, RAS only refresh, and


    OCR Scan     		PDF V104J232 72-lead V104J232 DD03350

    Untitled

    Abstract: No abstract text available
    Text: M O S EL V IT E L IC V53C8129H ULTRA-HIGH PERFORMANCE, 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAC 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Icu ò 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode With EDO Cycle Time, (tpC)


    OCR Scan     		PDF V53C8129H V53C8129H-50 24-pin 26/24-pin QD03fl3b

    Untitled

    Abstract: No abstract text available
    Text: M O S EL V IT E L IC V53C511816502 1M x 16 EDO PA G E M ODE CMOS DYNAM IC RAM OPTIONAL SE LF REFRESH HIGH PERFORMANCE 50 60 Max. RAS Access Time, Jrac 50 ns 60 ns Max. Column Address Access Time, (^;aa ) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (1pC)


    OCR Scan     		PDF V53C511816502 16-bit cycles/16 42-pin 44/50-pin V53C511816502 b3S33Tl

    Untitled

    Abstract: No abstract text available
    Text: M O SEL VITELIC PREW BBtO M V62C51864 8Kx8 B IT STA TIC RAM Features Description • ■ ■ The V 62C 51864 is a 65,536-bit static random access memory organized as 8,192 words by 8 bits. It is built with M O SE L VITE LIC ’s high performance C M O S process. Inputs and three state outputs are


    OCR Scan     		PDF V62C51864 536-bit b3533 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: M O SEL V tTE LiC V53C8512N 3.3 VOLT, LO W POWER 512K x 8 AN D 5 1 2 K x 9 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIM INARY HIGH PERFORMANCE V53C8512N 60/60L 70/70L M ax. R A S A cce ss T im e, Orac 6 0 ns 70 ns M ax. C o lum n A d dre ss A cce ss T im e , tCAA)


    OCR Scan     		PDF V53C8512N 60/60L 70/70L V53C8S12NL V53C8512N January199S b3S33

    v110h

    Abstract: V53C104F
    Text: M O S E L VTTELÊ C V53C 104F H IG H PE R FO RM A N CE, L O W P O W E R 2 5 6 K X 4 B IT F A S T P A G E M O D E CM O S D Y N A M IC R A M 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns


    OCR Scan     		PDF V53C104F V53C104F 60/60L 70/70L 80/80L V53C104FL 200mA 200nA V53C104F-80 V53C104F-1 v110h