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    B3 MARKING TRANSISTOR Search Results

    B3 MARKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) Visit Rochester Electronics LLC Buy
    54F350/BEA Rochester Electronics LLC 54F350 - Shifter, F/FAST Series, 4-Bit, TTL, CDIP16 - Dual marked (5962-8607501EA) Visit Rochester Electronics LLC Buy
    5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/B2A Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) Visit Rochester Electronics LLC Buy

    B3 MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 1203

    Abstract: No abstract text available
    Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSA1203 KSA1203 KSC2883 OT-89 KSA1203OTF KSA1203YTF transistor 1203 PDF

    MARKING CODE B3 sot-89

    Abstract: MY sot-89 NPN medium power transistor in a SOT package
    Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking


    Original     		KSC2982 KSC2982 OT-89 KSC2982ATF KSC2982BTF KSC2982CTF KSC2982DTF MARKING CODE B3 sot-89 MY sot-89 NPN medium power transistor in a SOT package PDF

    B3 transistor

    Abstract: KSA1203 KSC2883
    Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSA1203 KSC2883 OT-89 KSA1203 B3 transistor KSC2883 PDF

    KSC2982

    Abstract: No abstract text available
    Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking


    Original     		KSC2982 OT-89 KSC2982 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSC2883 KSA1203 OT-89 KSC2883 PDF

    transistor B3 OF

    Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSC2883 KSA1203 OT-89 KSC2883 transistor B3 OF B3 transistor KSA1203 B3 marking transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89


    Original     		KSD1621 KSB1121 OT-89 PDF

    tm 1621

    Abstract: qs marking sot-89 QS 100 NPN Transistor KSB1121 KSD1621 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF MARKING CODE B3 sot-89
    Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89


    Original     		KSD1621 KSB1121 OT-89 tm 1621 qs marking sot-89 QS 100 NPN Transistor KSB1121 KSD1621 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF MARKING CODE B3 sot-89 PDF

    C5026M-O

    Abstract: equivalent transistor for c5026m QS 100 NPN Transistor KSC5026M KSC5026MOS
    Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage 1100


    Original     		KSC5026M O-126 C5026M-O equivalent transistor for c5026m QS 100 NPN Transistor KSC5026M KSC5026MOS PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C PDF

    FDU2N60C

    Abstract: N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FDU2N60C N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units Collector-Base Voltage 1100 V


    Original     		KSC5026M O-126 PDF

    MJD310

    Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
    Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZXTN4004K 150V NPN LED DRIVING TRANSISTOR IN TO252 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA, VCE = 0.25V IC cont = 1A Lead-Free Finish; RoHS Compliant (Notes 1 & 2)


    Original     		ZXTN4004K 150mA, AEC-Q101 J-STD-020 MIL-STD-202, DS35458 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2DB1182Q 32V PNP SURFACE MOUNT TRANSISTOR IN TO252 Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		2DB1182Q AEC-Q101 J-STD-020 MIL-STD-202, DS35651 PDF

    diode zener c26

    Abstract: A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570NT1 MRF1570T1 mrf1570
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 diode zener c26 A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570T1 mrf1570 PDF

    C38 diode

    Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		470on. AN215A, MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 C38 diode Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor PDF

    J042

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		MRF1570T1 MRF1570NT1 MRF1570FNT1 MRF1570FT1 J042 PDF

    zener diode marking c24

    Abstract: transistor c36 j063
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570N zener diode marking c24 transistor c36 j063 PDF

    transistor marking z9

    Abstract: Arco Variable Capacitors MRF282
    Text: Freescale Semiconductor Technical Data MRF282 Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		MRF282 MRF282SR1 MRF282ZR1 transistor marking z9 Arco Variable Capacitors PDF

    ZXTN4004KTC

    Abstract: ZXTN4004K ZXTN4004
    Text: A Product Line of Diodes Incorporated ZXTN4004K 150V NPN LED DRIVING TRANSISTOR IN TO252 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA, VCE = 0.25V IC cont = 1A Lead Free, RoHS Compliant (Note 1)


    Original     		ZXTN4004K 150mA, AEC-Q101 J-STD-020 ZXTN4004KTC ZXTN4004 DS35458 ZXTN4004KTC ZXTN4004K ZXTN4004 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2DB1184Q 50V PNP SURFACE MOUNT TRANSISTOR IN TO252-3L Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		2DB1184Q O252-3L AEC-Q101 J-STD-020 DS31504 PDF

    2n7226

    Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,


    Original     		MIL-PRF-19500/592C MIL-S-19500/592B 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, 2N7228U 2n7226 transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 PDF

    b3a transistor

    Abstract: Transistor Bo 47 MARKING B3A marking b3n
    Text: UMB3N IMB3A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB3N (UMT6) 2.0±0.2 |l.3±0Jj package marking: UMB3N and IMB3A; B3 0 .6 5 I w (2 ) («B BBC i t package contains two independent


    OCR Scan     		SC-74) DTA143TKA) SC-70) SC-59) b3a transistor Transistor Bo 47 MARKING B3A marking b3n PDF