transistor 1203
Abstract: No abstract text available
Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSA1203
KSA1203
KSC2883
OT-89
KSA1203OTF
KSA1203YTF
transistor 1203
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MARKING CODE B3 sot-89
Abstract: MY sot-89 NPN medium power transistor in a SOT package
Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking
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KSC2982
KSC2982
OT-89
KSC2982ATF
KSC2982BTF
KSC2982CTF
KSC2982DTF
MARKING CODE B3 sot-89
MY sot-89
NPN medium power transistor in a SOT package
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B3 transistor
Abstract: KSA1203 KSC2883
Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSA1203
KSC2883
OT-89
KSA1203
B3 transistor
KSC2883
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KSC2982
Abstract: No abstract text available
Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking
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KSC2982
OT-89
KSC2982
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Untitled
Abstract: No abstract text available
Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSC2883
KSA1203
OT-89
KSC2883
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transistor B3 OF
Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSC2883
KSA1203
OT-89
KSC2883
transistor B3 OF
B3 transistor
KSA1203
B3 marking transistor
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Untitled
Abstract: No abstract text available
Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89
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KSD1621
KSB1121
OT-89
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tm 1621
Abstract: qs marking sot-89 QS 100 NPN Transistor KSB1121 KSD1621 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF MARKING CODE B3 sot-89
Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89
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KSD1621
KSB1121
OT-89
tm 1621
qs marking sot-89
QS 100 NPN Transistor
KSB1121
KSD1621
KSD1621RTF
KSD1621STF
KSD1621TTF
KSD1621UTF
MARKING CODE B3 sot-89
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C5026M-O
Abstract: equivalent transistor for c5026m QS 100 NPN Transistor KSC5026M KSC5026MOS
Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage 1100
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KSC5026M
O-126
C5026M-O
equivalent transistor for c5026m
QS 100 NPN Transistor
KSC5026M
KSC5026MOS
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Untitled
Abstract: No abstract text available
Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low gate charge (typical 8.5 nC)
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FQD2N60C/FQU2N60C
FQD2N60C/FQU2N60C
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FDU2N60C
Abstract: N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U
Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQD2N60C/FQU2N60C
FQD2N60C/FQU2N60C
FDU2N60C
N-Channel 600V MOSFET
FQD2N60C
FQU2N60C
600v 2A ultra fast recovery diode
2250U
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Untitled
Abstract: No abstract text available
Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units Collector-Base Voltage 1100 V
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KSC5026M
O-126
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MJD310
Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
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MRF282SR1
MRF282ZR1
MJD310
mallory 25 uF capacitor
transistor marking z11
transistor marking z9
transistor z9
rm73b2b120jt
TRANSISTOR 3052
100B390JCA500X
MRF282
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZXTN4004K 150V NPN LED DRIVING TRANSISTOR IN TO252 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA, VCE = 0.25V IC cont = 1A Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
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ZXTN4004K
150mA,
AEC-Q101
J-STD-020
MIL-STD-202,
DS35458
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Untitled
Abstract: No abstract text available
Text: 2DB1182Q 32V PNP SURFACE MOUNT TRANSISTOR IN TO252 Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
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2DB1182Q
AEC-Q101
J-STD-020
MIL-STD-202,
DS35651
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diode zener c26
Abstract: A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570NT1 MRF1570T1 mrf1570
Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570NT1
diode zener c26
A113
AN211A
AN215A
AN721
MRF1570FNT1
MRF1570N
MRF1570T1
mrf1570
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C38 diode
Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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470on.
AN215A,
MRF1570NT1
MRF1570FNT1
MRF1570T1
MRF1570FT1
C38 diode
Z15 marking diode
z15 Diode glass
C36 marking
diode marking c34
c38 transistor
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J042
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570T1
MRF1570NT1
MRF1570FNT1
MRF1570FT1
J042
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zener diode marking c24
Abstract: transistor c36 j063
Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570N
zener diode marking c24
transistor c36
j063
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transistor marking z9
Abstract: Arco Variable Capacitors MRF282
Text: Freescale Semiconductor Technical Data MRF282 Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
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MRF282
MRF282SR1
MRF282ZR1
transistor marking z9
Arco Variable Capacitors
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ZXTN4004KTC
Abstract: ZXTN4004K ZXTN4004
Text: A Product Line of Diodes Incorporated ZXTN4004K 150V NPN LED DRIVING TRANSISTOR IN TO252 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA, VCE = 0.25V IC cont = 1A Lead Free, RoHS Compliant (Note 1)
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ZXTN4004K
150mA,
AEC-Q101
J-STD-020
ZXTN4004KTC
ZXTN4004
DS35458
ZXTN4004KTC
ZXTN4004K
ZXTN4004
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Untitled
Abstract: No abstract text available
Text: 2DB1184Q 50V PNP SURFACE MOUNT TRANSISTOR IN TO252-3L Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
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2DB1184Q
O252-3L
AEC-Q101
J-STD-020
DS31504
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2n7226
Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,
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MIL-PRF-19500/592C
MIL-S-19500/592B
2N7224,
2N7225,
2N7227,
2N7228,
2N7224U,
2N7225U,
2N7227U,
2N7228U
2n7226
transistor substitution chart
2N7224
2N7224U
2N7225
2N7225U
2N7227
2N7227U
2N7228
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b3a transistor
Abstract: Transistor Bo 47 MARKING B3A marking b3n
Text: UMB3N IMB3A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB3N (UMT6) 2.0±0.2 |l.3±0Jj package marking: UMB3N and IMB3A; B3 0 .6 5 I w (2 ) («B BBC i t package contains two independent
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SC-74)
DTA143TKA)
SC-70)
SC-59)
b3a transistor
Transistor Bo 47
MARKING B3A
marking b3n
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