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TE Connectivity D38999-27HB2XD D38999/27HB2XD
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DigiKey	D38999-27HB2XD	Bulk			100	1 - 10 - 100 $104.39 1000 $104.39 10000 $104.39	Buy Now
JRH Electronics D38999-27HB2XD D38999/27HB2XD
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DigiKey	D38999-27HB2XD				1	1 $3208.16 10 $1906.655 100 $1906.655 1000 $1906.655 10000 $1906.655	Buy Now
TE Connectivity D38999-25HB2XD D38999/25HB2XD
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DigiKey	D38999-25HB2XD	Bulk			50	1 - 10 - 100 $195.455 1000 $195.455 10000 $195.455	Buy Now
JRH Electronics D38999-25HB2XD D38999/25HB2XD
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DigiKey	D38999-25HB2XD				1	1 $3206.49 10 $1905.673 100 $1905.673 1000 $1905.673 10000 $1905.673	Buy Now
TE Connectivity D38999-21HB2XD D38999/21HB2XD
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DigiKey	D38999-21HB2XD	Bulk			50	1 - 10 - 100 $199.823 1000 $199.823 10000 $199.823	Buy Now

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B2XD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TMS320C54x program to multiply two q15 numbers Abstract: spra454 4 bit left shift circuit for dsp iir filter applications 32x16-bit tms320c54x MEMORY MAPPED REGISTERS ST0 ST1 iIR FILTER implementation in TMS320C54x Text: Extended Precision IIR Filter Design on the TMS320C54x DSP Application on an Audio Equalizer Literature Number: SPRA454 Texas Instruments Europe June 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their	Original	TMS320C54x SPRA454 TMS320C54x program to multiply two q15 numbers spra454 4 bit left shift circuit for dsp iir filter applications 32x16-bit tms320c54x MEMORY MAPPED REGISTERS ST0 ST1 iIR FILTER implementation in TMS320C54x	PDF
kje x6 Abstract: kje y4 KJE T5 256x16e KJE T3 kje y9 KJE T4 Y1 kje Text: IS 42S 16128 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION MAY 1998 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's4M b Synchronous DRAM IS42S16128 is organized as	OCR Scan	400-mil 50-pin IS42S16128 131072-word 16-bit performanS42S16128 DR005-OC IS42S16128 DR005-OC kje x6 kje y4 KJE T5 256x16e KJE T3 kje y9 KJE T4 Y1 kje	PDF
d4564841 Abstract: No abstract text available Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.	OCR Scan	64M-bit uPD4564441 864-bit 54-pin d4564841	PDF
tdq4-M Abstract: HP 2231 IS42S16128 Text: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.	OCR Scan	131072-word 16-bit 50-pin DR005-0A tdq4-M HP 2231 IS42S16128	PDF
Untitled Abstract: No abstract text available Text: ISSI' IS 4 2 S 1 6 1 2 8 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.	OCR Scan	IS42S16128 131072-word 16-bit 16-bit DR005-0A IS42S16128	PDF
Untitled Abstract: No abstract text available Text: ISSI' IS 4 2 S 1 6 1 2 8 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as	OCR Scan	IS42S16128 131072-word 16-bit IS42S16128 005-0B	PDF
Untitled Abstract: No abstract text available Text: 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer	OCR Scan	IS42S16128 131072-word 16-bit 16-bit 1DD4404 DR005-OA IS42S16128 DR005	PDF
Untitled Abstract: No abstract text available Text: ISSI' IS 4 2 S 1 6 1 2 8 ADVANCE INFORMATION MAY 1998 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as	OCR Scan	IS42S16128 131072-word 16-bit PK13197T2	PDF
SMD marking s07 Abstract: smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191 Text: SIEM EN S 16 MBit Synchronous DRAM • HYB 39S16400/800/160CT-8/-10 High Performance: /c K M A X ?CK3 -8 -10 Units 125 100 MHz 8 10 ns ! AC3 6 7 ?CK2 10 12 ns ?AC2 6 8 ns ns • Multiple Burst Read with Single Write Operation • Autom atic and Controlled Precharge	OCR Scan	39S16400/800/160CT-8/-10 fl235b05 SMD marking s07 smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191	PDF
A91A Abstract: pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jUPD45256441,45256841,45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.	OCR Scan	uPD45256441 uPD45256841 uPD45256163 256M-bit 216x4x4, 608x8x4, 304x16x4 54-pin M13394EJ3V0DS00 A91A pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA	PDF
A2XD Abstract: Silicon Integrated System IS42S16128 kjg x6 0020665 Text: ISSI’ IS 4 2 S 1 6 1 2 8 _ 12ÔK Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply	OCR Scan	IS42S16128_ 400-mil 50-pin DR005-OB A2XD Silicon Integrated System IS42S16128 kjg x6 0020665	PDF