b2535
Abstract: b2545 b2535 diode U4T DIODE Motorola b2545 2535c B2545 M BR2545CT
Text: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBR2535CT/D
B2535,
B2545
MBR2535CT
MBR2545CT
MBR2545CT
-220A
b3b7255
b2535
b2535 diode
U4T DIODE
Motorola b2545
2535c
B2545 M
BR2545CT
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b2535
Abstract: b2545 B2545 M b2535 diode
Text: MOTOROLA MBR2535CT MBR2545CT SEM ICONDUCTOR TECHNICAL DATA MBR2545CT is a Motorola Preferred Device Sw itchm ode Power R e ctifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBR2535CT
MBR2545CT
MBR2545CT
MBR2535CT,
b2535
b2545
B2545 M
b2535 diode
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Motorola b2545
Abstract: b2535 b2535 diode b2545 b2545 MOTOROLA 221A-06 MBR2535CT MBR2545CT
Text: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:
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MBR2535CT/D
MBR2535CT
MBR2545CT
MBR2545CT
26otorola,
Motorola b2545
b2535
b2535 diode
b2545
b2545 MOTOROLA
221A-06
MBR2535CT
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B2545
Abstract: Motorola b2545
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifiers M B R F2545C T M otorola P referred D evice The SW ITCHM O DE Power Rectifier em ploys the Schottky Barrier principle in a large area m e ta l-to -silico n power diode. S ta te -o f-th e -a rt geom etry features
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MOTOROLA B2545
Abstract: b2545 MOTOROLA B2545
Text: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e ctifier The SW ITCHM O DE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-the-art geometry features
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MBRF2545CT/D
MOTOROLA B2545
b2545 MOTOROLA
B2545
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S chottky Pow er R ectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-sllicon power diode. S tate-of-the-art geometry features
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MBRF2545CT/D
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Motorola b2545
Abstract: B2545 b2545 MOTOROLA 221D AN1040 MBRF2545CT
Text: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF2545CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features
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MBRF2545CT/D
MBRF2545CT
Motorola b2545
B2545
b2545 MOTOROLA
221D
AN1040
MBRF2545CT
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B2545
Abstract: Motorola b2545
Text: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features
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MBRF2545CT/D
B2545
Motorola b2545
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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