S1 DIODE
Abstract: Marking B23 Q62702-B20-S1 Q62702-B21-S1 Q62702-B22-S1 Q62702-B23-S2 marking 27 diode top marking S1
Text: Silicon Tuning Varactors ● Abrupt junction tuning diode ● Tuning range 120 V BBY 24 … BBY 27 Type Marking Ordering Code BBY 24-S1 – Q62702-B20-S1 BBY 25-S1 Q62702-B21-S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1 P
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24-S1
Q62702-B20-S1
25-S1
Q62702-B22-S1
27-S2
Q62702-B21-S1
26-S1
Q62702-B23-S2
CT120
S1 DIODE
Marking B23
Q62702-B20-S1
Q62702-B21-S1
Q62702-B22-S1
Q62702-B23-S2
marking 27 diode
top marking S1
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Power DIODE A30
Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Text: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs
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QS34XR245
32-Bit
QS34XR245Q3
QS3R245
80-pin
QS34XR245
MDSL-00253-02
Power DIODE A30
b12 diode
DIODE B12 41
QS3R245
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diode b29
Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
Text: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND
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QS34XVH245
32-Bit
150MHz
80-pin
QS34XVH245
MDSL-00273-03
diode b29
B14 diode on semiconductor
b12 diode
DIODE B12 51
DIODE B21
DIODE B31
a30 DIODE
DIODE A30
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diode A23
Abstract: QS3245 QS34X2245 QS34X245
Text: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs
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QS34X245,
QS34X2245
32-Bit
QS34X245
QS34X245
QS3245
QS34X2245
80-pin
diode A23
QS3245
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Untitled
Abstract: No abstract text available
Text: IDTQS34X2245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES FEATURES: • • • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc
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IDTQS34X2245
32-BIT
IDTQS34X2245
80-pin
L0201-02,
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
IDTQS34XVH245
500MHz
80-Pin
34XVH245
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH2245
32-BIT
IDTQS34XVH2245
80-Pin
34XVH2245
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH2245
32-BIT
80-Pin
34XVH2245
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
500MHz
80-Pin
34XVH245
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CA3049T
Abstract: ca3049 CA3102 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8
Text: S E M I C O N D U C T O R CA3049, CA3102 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB Typ . . . . . . . . . . . . . . . . . . . 200MHz The CA3049T and CA3102 consist of two independent
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CA3049,
CA3102
500MHz
200MHz
CA3049T
CA3102
500MHz.
ca3049
J307
CA3102 equivalent
CA3102E
CA3102M
I9 transistor
CA3102M96
m1k8
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BU7988KVT
Abstract: DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number
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56bit
BU7988KVT
150MHz
112MHz
224MHz)
TQFP100V
500pcs
08T241A
BU7988KVT
DIODE B12 51
TQFP100V Package
TA10
TA12
TA16
TQFP100V
B12 2N DIODE
diode b22
diode td15
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Diode Mark ON B14
Abstract: Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package
Text: LVDS Interface ICs 56bit LVDS Receiver 8:56 DeSerializer BU7985KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number
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56bit
BU7985KVT
150MHz
112MHz
180MHz)
20MHz
112MHz.
TQFP100V
500pcs
Diode Mark ON B14
Diode Mark B14
schottky barrier diode b22
BU7985KVT
schottky B22
diode b27
BU7988
BU7988KVT
TQFP100V
TQFP100V Package
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diode td15
Abstract: diode td13 DIODE B12 51 B12 68 diode
Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number
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56bit
BU7988KVT
150MHz
112MHz
224MHz)
TQFP100V
diode td15
diode td13
DIODE B12 51
B12 68 diode
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schottky barrier diode b22
Abstract: g17g diode td15
Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number
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56bit
BU7988KVT
150MHz
112MHz
224MHz)
TQFP100V
R1010A
schottky barrier diode b22
g17g
diode td15
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diode marking 226
Abstract: DIODE B21 625 diode BY 225 diode philips bav23s L31 diode MBB057 marking RAV j353 diode BY 226
Text: ^53^31 0024352 b21 M I A P X P h ilip s S e m ico n d uctors Product spe cification Silicon planar epitaxial high-speed diode N AMER DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope intended for surface mounting. The
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BAV23S
BAV23S
100hA
diode marking 226
DIODE B21
625 diode
BY 225 diode
philips bav23s
L31 diode
MBB057
marking RAV
j353
diode BY 226
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siemens 27 s1 diode
Abstract: Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 Q62702-B21 3SB05
Text: SIEM EN S Silicon Tuning Varactors BBY24 . BBY 27 • Abrupt junction tuning diode • Tuning range 120 V Type Marking Ordering Code BBY 24-S1 - Q62702-B20-S1 BBY 25-S1 Q62702-B21 -S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1
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24-S1
Q62702-B20-S1
25-S1
Q62702-B21
EHA07001
26-S1
Q62702-B22-S1
27-S2
Q62702-B23-S2
B235bOS
siemens 27 s1 diode
Marking B23
BBY24
Q62702-B20-S1
Q62702-B22-S1
Q62702-B23-S2
T120
3SB05
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Untitled
Abstract: No abstract text available
Text: S QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot SwaP Applications HotSwitch ductor Inc q s 34xvh 245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state
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32-Bit
34xvh
50MHz
80-pin
QS34XVH245
QS34Xropagation
MDSL-00273-03
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Untitled
Abstract: No abstract text available
Text: 1DI2OOK-O55 200a " £±' <* 7— )l : Outline D rawings - M.O-w 18.0 _ 2 ÌO . 20.0 . 27.0 POWER TRAN SISTO R MODULE ’ Features • High Voltage • 7 'J — V 's p y - f # — Kfài • A S O ^ /a I ' • Including Free W heeling Diode
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1DI2OOK-O55
B22Hit
E82988
I95T/R89)
Shl50
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DSAIH0002559
Abstract: No abstract text available
Text: DO-35 High Voltage I Current Use Advantages 1N5194 thru 1N5196 I Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.
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DO-35
1N5194
1N5196
DO-213AA
1N5195
200mAdc,
1N5194/95/96
DSAIH0002559
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA75AA100
E76102
100msec
00V-----IB,
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RM3 transistors
Abstract: B13 transistors
Text: BIPOLAR TRANSISTORS E q u ivalen t Circuit F W D : F ree w h e e l d io d e S U D . S p e e d u p d io d e F R D : F ast re c o v e ry d iode Fig. A1 Fig. B1 Fig. B2 Fig. B3 Fig. B4 Fig. B5 Fig. B6 Fig. B8 Fig. B9 Fig. B11 Fig. B12 D io d e Diode Fig. B10
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B21oE2
B1oE20oE2
RM3 transistors
B13 transistors
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LED photo darlington transistor IC PACKAGE
Abstract: PHOTO TRANSISTOR Rise time of photo transistor "photo transistor" transistor AS 337 OC701
Text: O K I electronic components OC701 PHOTO COUPLER GENERAL DESCRIPTION The OC701 is a photocoupler formed by combining a GaAs infrared light emitting diode as the input element, and a silicon photo Darlington transistor as an output element. Eencased in a 6-pin plastic
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QC701_
OC701
E86831
2424D
OC701
2424o
LED photo darlington transistor IC PACKAGE
PHOTO TRANSISTOR
Rise time of photo transistor
"photo transistor"
transistor AS 337
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MG75G2YL1A
Abstract: 1-B215
Text: MG75G2YL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current: Gain : hf,E=80 Min. (Ic=7 5A)
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MG75G2YL1A
MG75G2YL1A
1-B215
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LED photo darlington transistor IC PACKAGE
Abstract: OC70 PHOTO TRANSISTOR QC701 OC701 QC701-1 led 6pin LED PHOTO TRANSISTOR
Text: O K I electronic components OC701 PHOTO COUPLER GENERAL DESCRIPTION The OC701 is a photocoupler formed by combining a GaAs infrared light emitting diode as the input element, and a silicon photo Darlington transistor as an output element. Eencased in a 6-pin plastic
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QC701_
OC701
E86831
2424D
OC701
2424o
LED photo darlington transistor IC PACKAGE
OC70
PHOTO TRANSISTOR
QC701
QC701-1
led 6pin
LED PHOTO TRANSISTOR
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