IC 7403
Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
SOIC-16
NMT2222
IC 7403
MMPQ2222
PZT2222A
SOIC-16
MMBT2222A
NMT2222
PN2222A
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DUAL NPN SOT23-6
Abstract: NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors
Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 B1 Applications • C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information
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ZXTC2045E6
OT23-6
OT236
ZXTC2045E6TA
ZXTC2045E6TC
DUAL NPN SOT23-6
NPN SOT23-6
320 sot236
ZXTC2045E6TA
marking E1 sot236
Surface mount NPN/PNP complementary transistor
ZXTC2045E6
ZXTC2045E6TC
MOSFET sot23-6
SOT23-6, complementary transistors
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ZXTC2045E6TC
Abstract: No abstract text available
Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information
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ZXTC2045E6
OT23-6
OT236
ZXTC2045E6TA
ZXTC2045E6TC
ZXTC2045E6TC
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BSV52
Abstract: 2369A SO2369 SO2369A SOT23 BSV52 n11 sot 65 so2369 n11 807g ic ua 413
Text: BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS • ■ ■ Type Marking BSV52 B2 SO2369 N11 SO 2369A N81 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS.
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BSV52
SO2369/SO2369A
SO2369
OT-23
SO2369/A
BSV52
2369A
SO2369
SO2369A
SOT23 BSV52
n11 sot 65
so2369 n11
807g
ic ua 413
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Dual pnp Dual npn Transistor
Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
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LS3550
OT-23
Dual pnp Dual npn Transistor
n-channel JFET sot23-6
surface mount pico-amp diode
dual P-Channel JFET sot23
A1 sot23 n-channel
dual Channel JFET sot23
"Dual npn Transistor"
LS841 SOIC
J110 spice
A6 SOT-23 MOSFET P-CHANNEL
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LS3250A
Abstract: LS3250B LS3250C LS3550 LS3550A
Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
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LS3550
OT-23
OT-23
LS3550A,
OT23-6.
LS3250A
LS3250B
LS3250C
LS3550A
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PDF
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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Dual Transistors TO-78
Abstract: DUAL NPN SOT23-6 LS3250A NPN SOT23-6 LS3250C LS3250 LS3250B 27B2
Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
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LS3250
OT-23
OT-23
LS3250A,
OT23-6.
Dual Transistors TO-78
DUAL NPN SOT23-6
LS3250A
NPN SOT23-6
LS3250C
LS3250B
27B2
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J201 spice
Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
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LS3250
OT-23
J201 spice
dual P-Channel JFET sot23
2n4416 transistor spice
LS3250A
a7 surface mount diode
J202 TRANSISTOR
fet j310
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PDF
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amelco
Abstract: LS3550A
Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* 1 TIGHT MATCHING EXCELLENT THERMAL TRACKING ABSOLUTE MAXIMUM RATINGS * SOT-23 TOP VIEW 2mV 1 3µV/°C 2 B1 E2 B2 @ 25 °C unless otherwise stated Maximum Temperatures
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LS3550
OT-23
25-year-old,
LS3550
amelco
LS3550A
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Untitled
Abstract: No abstract text available
Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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BSV52
OT-23
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SOT23-6 E2
Abstract: SOT23-6E2
Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS *FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING 1 EXCELLENT THERMAL TRACKING ABSOLUTE MAXIMUM RATINGS 1 TO-78 TOP VIEW * SOT-23 TOP VIEW 2mV 3µV/°C B1 E2 B2 2 @ 25 °C unless otherwise stated
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LS3250
OT-23
LS3250A,
OT23-6.
SOT23-6 E2
SOT23-6E2
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PDF
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BSV52
Abstract: SOT23 BSV52 mark B1 sot23
Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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Original
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BSV52
OT-23
BSV52
SOT23 BSV52
mark B1 sot23
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Untitled
Abstract: No abstract text available
Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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BSV52
OT-23
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2SC1018
Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252
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2S01280
2SC1568
2SC1518
ZTX449
2S01664
2S01225M
2SC1018
sk3024
2S01526
2N3925
2N3818
2S01005
bly14
PTC144
2N3718
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MMPQ2907
Abstract: SOIC-16
Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMPQ2907
SOIC-16
MMPQ2907
SOIC-16
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Untitled
Abstract: No abstract text available
Text: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2
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BCR166.
/SEMB13
BCR166/F/L3
BCR166T/W
SEMB13
EHA07183
EHA07173
BCR166
BCR166F
BCR166L3
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BCR166
Abstract: BCR166F BCR166L3 BCR166T SEMB13 TRANSISTOR wts
Text: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2
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BCR166.
/SEMB13
BCR166/F/L3
BCR166T/W
SEMB13
EHA07183
EHA07173
BCR166
BCR166F
BCR166L3
BCR166
BCR166F
BCR166L3
BCR166T
SEMB13
TRANSISTOR wts
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CBVK741B019
Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMPQ2907
SOIC-16
CBVK741B019
F63TNR
L86Z
MMPQ2907
NDM3000
NDM3001
SOIC-16
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PDF
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Untitled
Abstract: No abstract text available
Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMPQ2907
SOIC-16
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Untitled
Abstract: No abstract text available
Text: BSV52 SOT23 IMPIM SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS: BSV52 - B2 BSV52R - B4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage v CBO o m O < V CES CO LU o >
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OCR Scan
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BSV52
BSV52
BSV52R
100MHz
DS201
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PDF
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bsv52
Abstract: No abstract text available
Text: f Z T SG S-TH O M SO N ^ 7# lüülDSœiiiiSTrœiülOigl BSV52 S02369/S02369A SMALL SIGNAL NPN TRANSISTORS Type Marking BSV52 B2 S02369 N11 S02369A N81 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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OCR Scan
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BSV52
S02369/S02369A
S02369
S02369A
OT-23
S02369/A
007fl07b
BSV52/S02369/S02369A
bsv52
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PDF
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BSV52
Abstract: BSV52R HIGH SPEED SWITCHING NPN SOT23 DS201
Text: SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR BSV52 P AR TM AR KIN G DETAILS: B SV52 - B2 B SV 52R - B4 ABSOLUTE M A X IM U M RATINGS PARAMETER VALUE UNIT V CBO 20 V V CES 20 V 12 V SYM BO L C ollector-B ase V oltag e C olle cto r-E m itte r V oltag e
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OCR Scan
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BSV52
BSV52R
BSV52
100MHz
DS201
HIGH SPEED SWITCHING NPN SOT23
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PDF
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E80F
Abstract: MINI-MELF DIODE RED CATHODE
Text: SCHOTTKY DIODES PACKAGING Quantity per rac. or box Buffix following standard part number Packing Leade DO 35 DO 41 53 mm e xlaj reel No standard execution 4000 3000 26 mm axial Am m opack box — B2 4000 3000 reel — AR 2 (cathode up) — AR 1 (cathode down)
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OCR Scan
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