VPS05604
Abstract: bfs 11
Text: BFS 17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363
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VPS05604
EHA07196
OT-363
Oct-25-1999
VPS05604
bfs 11
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6c2 transistor
Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor
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OT-363
Q62702-F1645
Dec-18-1996
6c2 transistor
transistor marking MCs
Q62702-F1645
transistor BFs 18
SOT 23 CODE MCS
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SOT–23–6 0.05 E S B S 5 A C A 6 4 A1 A B ÇÇÇ ÉÉÉ ÉÉÉ ÇÇÇ b q c c1 H M A E1 A C M 0.10 3 C B b 2 M e1 D 1 ÇÇ ÇÇ ÇÇ 0.20 e PIN 1 IDENTIFIER IN THIS ZONE b1 L SECTION A–A www.lrc.cn DIM A A1 b b1 c c1 D E E1
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178 15T
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015TLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT– 23 L9015TLT1G 15T 3000/Tape&Reel L9015TLT3G
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L9015TLT1G
L9014.
3000/Tape
L9015TLT3G
10000/Tape
178 15T
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ahr 49 transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB
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L2SB1197KXLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
ahr 49 transistor
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MSD601
Abstract: Marking yr sot-23 Marking c0 SC-75 sot-23 Marking yr EIA-481 SOT363 SOT-353 b1
Text: MSD601 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7.0 V Collector Current - Continuous IC 100 mA
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MSD601
OT-23
18-Sep-06
MSD601
Marking yr
sot-23 Marking c0
SC-75
sot-23 Marking yr
EIA-481 SOT363
SOT-353 b1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE 3 • Pb-Free Package is available. 1 2 SOT– 23 TO–236AB MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR Peak Forward Current Peak Forward Surge Current
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LBAS21LT1G
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550*LT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION Device Package Shipping L8550*LT1G SOT-23 3000/Tape&Reel L8550*LT3G SOT-23 3000/Tape&Reel 1 2 SOT– 23 MAXIMUM RATINGS
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L8550
OT-23
3000/Tape
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MSB709
Abstract: SC-75 SOT-353 b1
Text: MSB709 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -7.0 V Collector Current - Continuous IC -100
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MSB709
OT-23
MSB709
18-Sep-06
SC-75
SOT-353 b1
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marking 13Q SOT-23
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013XLT1G FEATURE Pb-Free Package is available. 3 Ordering Information 1 Device Package Shipping L9013XLT1G SOT-23 3000/Tape&Reel L9013XLT3G SOT-23 10000/Tape&Reel 2 SOT-23 TO-236AB MAXIMUM RATINGS
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L9013XLT1G
OT-23
3000/Tape
L9013XLT3G
10000/Tape
O-236AB)
marking 13Q SOT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21SLT1G 3 FETURE • Pb-Free Package is available. 1 2 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol Value Unit VR
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LBAS21SLT1G
236AB)
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Untitled
Abstract: No abstract text available
Text: X LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012XLT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION Device 1 Package Shipping 2 L9012xx X LT1G SOT-23 3000/Tape&Reel L9012XLT3G SOT-23 10000/Tape&Reel SOT-23 TO-236AB
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L9012XLT1G
L9012xx
OT-23
3000/Tape
L9012XLT3G
10000/Tape
O-236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LBSS63LT1G PNP Silicon 3 COLLECTOR 3 1 1 BASE 2 2 Featrues CASE 318–08, STYLE 6 SOT– 23 TO–236AB EMITTER Pb-Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage
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LBSS63LT1G
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating
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LBAS16LT1G
OT-23
3000/Tape
LBAS16LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84BxxxLT1G SERIES 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device SOT– 23 (TO–236AB) PLASTIC CONSTRUCTION
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LBZX84BxxxLT1G
OT-23
V-36V)
236AB)
OT-23
3000/Tape
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM
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LN2302LT1G
236AB)
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84B2V0LT1G Series 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOT– 23 ƽSilicon epitaxial planar
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LBZX84B2V0LT1G
OT-23
V-36V)
LBZX84B2V0LT1G
OT-23
3000/Tape
LBZX84B2V0LT3G
10000/Tape
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CQ 523
Abstract: MARKING CODE cq sot-89
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping
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L2SC2411KXLT1G
L2SA1036K
236AB)
L2SC2411KPLT1G
3000/Tape
L2SC2411KPLT3G
10000/Tape
L2SC2411KQLT1G
L2SC2411KQLT3G
CQ 523
MARKING CODE cq sot-89
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode • Pb−Free Package is Available. LBAW56LT1G 1 CATHODE 3 ANODE 2 CATHODE 3 ORDERING INFORMATION Device PACKAGE Shipping 1 LBAW56LT1G SOT-23 3000 Tape & Reel 2 LBAW56LT3G SOT-23 10000 Tape & Reel
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LBAW56LT1G
LBAW56LT1G
OT-23
LBAW56LT3G
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 2 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. SOT– 23 zConstruction Silicon epitaxial planar z Pb-Free package is available
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LRB411DLT1G
OT-23)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel LMBTA42LT3G 1D SOT-23 10000/Tape&Reel
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LMBTA42LT1G
LMBTA43LT1G
OT-23
3000/Tape
LMBTA42LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. ▼ Simple Drive Requirement LP2301LT1G ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is available 3 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS
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LP2301LT1G
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z Pb-Free Package is Available. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel L2SA1037AKXLT1G SOT23 10000/Tape & Reel 2 SOT– 23
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L2SA1037AKXLT1G
3000/Tape
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LN2306LT1G ▼ Capable of 2.5V gate drive ▼ Lower on-resistance 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS
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LN2306LT1G
236AB)
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