Q4431
Abstract: No abstract text available
Text: 2SC » • û235bQS 000442*1 fl ■ SIEficÄ_., PNP Silicon Darlington Transistors BO 976 BD 978 SIEMENS AKTIENGESELLSCHAF 0 ^ 2 9 ßD 980 B D 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay
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235bQS
Q4431
T-33-31
100oC;
fl235bQS
QQQ4432
j-33-31
BD976
BD978
BD980
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74LS29
Abstract: No abstract text available
Text: TYPES SN54LS295B, SN74LS295B 4-BIT RIGHT-SHIFT LEFT-SHIFT REGISTERS WITH 3-STATE OUTPUTS O C T O B E R 1 976— R E V IS E D D E C E M B E R SN 54LS295B 'LS296B Offers Three Times the Sink-Current Capability of 'LS295A I OR W PACKAGE S N 7 4 L S 2 9 5 B . . . D, J O R N P A C K A G E
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SN54LS295B,
SN74LS295B
LS296B
LS295A
54LS295B
74LS29
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TVU0.5B
Abstract: B-976 transistor ASI10642 transistor 5200 976 transistor 254000
Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5B is Designed for UHF and Television Band IV & V Applications. PACKAGE STYLE .205 4L STUD D FEATURES: A • Common Emitter • PG = 12 dB at 0.5 W/860 MHz • Omnigold Metalization System
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8-32UNC
8-32U
TVU0.5B
B-976 transistor
ASI10642
transistor 5200
976 transistor
254000
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D965
Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
Text: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay
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235bQS
Q62702-D963
Q62702-D965
Q62702-D967
fl23SbOS
QQQ4432
0443Z
BD976
T-33-31
BD980
D965
b098
bd98
d965 hfe
BD980
Q62702-D967
QQQ4430
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ASI10642
Abstract: No abstract text available
Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5B is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .205 4L STUD D FEATURES: • Common Emitter • PG = 12 dB at 0.5 W/860 MHz • Omnigold Metalization System
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8-32UNC
ASI10642
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ASI10633
Abstract: MLN2030SS 254000
Text: MLN2030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN2030SS is Designed for D A FEATURES: C • • • Omnigold Metalization System B G E F H #8-32UNC MAXIMUM RATINGS J IC 10 A VCB 60 V VCE 35 V PDISS O O -65 C to +200 C
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MLN2030SS
MLN2030SS
8-32UNC
ASI10633
ASI10633
254000
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MRF750
Abstract: No abstract text available
Text: MRF750 NPN SILICON RF TRANSISTOR PACKAGE STYLE .205" 4L PILL DESCRIPTION: D The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. 3 4 A 2 C 1 FEATURES INCLUDE: B • High Power Gain • Infinite VSWR F G E
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MRF750
MRF750
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ASI10631
Abstract: MLN2027SS
Text: MLN2027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN2027SS is Designed for Class A Linear Applications up to 2.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 6.0 dB at 0.5 W/2.0 GHz • Omnigold Metalization System
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MLN2027SS
MLN2027SS
8-32U
ASI10631
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MRF627
Abstract: MRF-627
Text: MRF627 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF627 is Designed for Class C, FM Land Mobile and FM Base Applications up to 470 MHz. PACKAGE STYLE .205 4L PILL FEATURES: D • Common Emitter • PG = 13 dB at 0.5 W/470 MHz • Omnigold Metalization System
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MRF627
MRF627
MRF-627
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ULBM05
Abstract: No abstract text available
Text: ULBM05 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM05 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .205 4L PILL FEATURES: D • Common Emitter • PG = 13 dB at 0.5 W/470 MHz • Omnigold Metalization System
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ULBM05
ULBM05
ASI10674
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5B TRANSISTOR
Abstract: ASI10642
Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5B is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V 31.8 W @ TC = 25 C -65 OC to +200 OC
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ASI10642
5B TRANSISTOR
ASI10642
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ASI10631
Abstract: MLN2027SS
Text: MLN2027SS NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The ASI MLN2027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS IC 10 A VCB 60 V VCE 35 V PDISS 140 W @ TC = 25 OC
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MLN2027SS
MLN2027SS
8-32UNC
ASI10631
ASI10631
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976 transistor
Abstract: ASI10625 MLN1030SS
Text: MLN1030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN1030SS is Designed for D A FEATURES: C • • • Omnigold Metalization System B G E F H #8-32UNC MAXIMUM RATINGS J IC 10 A VCB 60 V VCE 35 V inches / mm inches / mm
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MLN1030SS
MLN1030SS
8-32UNC
ASI10625
976 transistor
ASI10625
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976 transistor
Abstract: ASI10674
Text: ULBM0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L PILL The ASI ULBM0.5 is Designed for D FEATURES: • • • Omnigold Metalization System A C B MAXIMUM RATINGS F IC 0.4 A VCBO 28 V VCEO 12 V G 4.0 V VEBO O PDISS 2.5 W @ TC = 25 C
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ASI10674
976 transistor
ASI10674
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CBSL2SS
Abstract: ASI10868 8-32UN
Text: CBSL2SS NPN SILICON RF POWER TRANSISTOR E DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI CBSL2SS is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. D A C FEATURES: • Pg = 9.0 dB min. @ 960 MHz • P1dB = 2.0 Watts min. at 960 MHz
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8-32UN
ASI10868
CBSL2SS
ASI10868
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MRF838A
Abstract: MRF838
Text: MRF838A NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz. D 3 4 A 2 C 1 FEATURES INCLUDE: B G • Gold Metallization • Emitter Ballasting
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MRF838A
MRF838A
8-32UNC
MRF838
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MLN1027SS
Abstract: ASI10621
Text: MLN1027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027SS is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 11 dB at 0.5 W/1.0 GHz • Omnigold Metalization System
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MLN1027SS
MLN1027SS
8-32U
ASI10621
ASI10621
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MLN1030SS
Abstract: 832u ASI10625
Text: MLN1030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030SS is Designed for Class A Linear Applications up to 1.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 10 dB at 1.0 W/1.0 GHz • Omnigold Metalization System
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MLN1030SS
MLN1030SS
8-32U
ASI10625
832u
ASI10625
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MLN2030SS
Abstract: ASI10633
Text: MLN2030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN2030SS is Designed for Class A linear Applications up to 2.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 10 dB at 1.0 W/2.0 GHz • Omnigold Metalization System
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MLN2030SS
MLN2030SS
8-32UNC
ASI10633
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ASI10641
Abstract: No abstract text available
Text: TVU0.5A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5A is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V VEBO 3.5 V J inches / mm
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8-32UNC
ASI10641
ASI10641
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ASI10621
Abstract: MLN1027SS
Text: MLN1027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN1027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS 10 A IC MAXIMUM MINIMUM DIM inches / mm inches / mm
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MLN1027SS
MLN1027SS
8-32UNC
ASI10621
ASI10621
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TVU0.5A
Abstract: B-976 transistor ASI10641
Text: TVU0.5A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5A is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .205 4L STUD D FEATURES: • Common Emitter • PG = 9.5 dB at 0.5 W/860 MHz • Omnigold Metalization System
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8-32UNC
ASI10641
TVU0.5A
B-976 transistor
ASI10641
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H83069RF
Abstract: TDA1 589 Nippon capacitors
Text: REJ09B0006-0400H 16 H8/3069RF-ZTAT TM Hardware Manual Renesas 16-Bit Single-Chip Microcomputer The revision list can be viewed directly by clicking the title page. The rivision list summarizes the locations of revisions and additions. Details should always
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REJ09B0006-0400H
H8/3069RF-ZTAT
16-Bit
H8/3069RF-ZTATTM
H83069RF
TDA1 589
Nippon capacitors
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LVDM976
Abstract: LVDM977 SN75976ADGG SN75LVDM976 SN75LVDM976DGG SN75LVDM976DGGR SN75LVDM977
Text: SN75LVDM976 SN75LVDM977 www.ti.com SLLS292B – APRIL 1998 – REVISED JANUARY 2000 9-CHANNEL DUAL-MODE TRANSCEIVERS FEATURES • • • • • • • • • • DGG PACKAGE TOP VIEW 9 Channels for the Data and Control Paths of the Small Computer Systems Interface (SCSI)
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SN75LVDM976
SN75LVDM977
SLLS292B
LVDM976)
LVDM977)
20-Mil
SN75976ADGG
LVDM976
LVDM977
SN75976ADGG
SN75LVDM976
SN75LVDM976DGG
SN75LVDM976DGGR
SN75LVDM977
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