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    B-976 TRANSISTOR Search Results

    B-976 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B-976 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TVU0.5B

    Abstract: B-976 transistor ASI10642 transistor 5200 976 transistor 254000
    Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5B is Designed for UHF and Television Band IV & V Applications. PACKAGE STYLE .205 4L STUD D FEATURES: A • Common Emitter • PG = 12 dB at 0.5 W/860 MHz • Omnigold Metalization System


    Original     		PDF 8-32UNC 8-32U TVU0.5B B-976 transistor ASI10642 transistor 5200 976 transistor 254000

    ASI10642

    Abstract: No abstract text available
    Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5B is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .205 4L STUD D FEATURES: • Common Emitter • PG = 12 dB at 0.5 W/860 MHz • Omnigold Metalization System


    Original     		PDF 8-32UNC ASI10642

    ASI10633

    Abstract: MLN2030SS 254000
    Text: MLN2030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN2030SS is Designed for D A FEATURES: C • • • Omnigold Metalization System B G E F H #8-32UNC MAXIMUM RATINGS J IC 10 A VCB 60 V VCE 35 V PDISS O O -65 C to +200 C


    Original     		PDF MLN2030SS MLN2030SS 8-32UNC ASI10633 ASI10633 254000

    MRF750

    Abstract: No abstract text available
    Text: MRF750 NPN SILICON RF TRANSISTOR PACKAGE STYLE .205" 4L PILL DESCRIPTION: D The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. 3 4 A 2 C 1 FEATURES INCLUDE: B • High Power Gain • Infinite VSWR F G E


    Original     		PDF MRF750 MRF750

    ASI10631

    Abstract: MLN2027SS
    Text: MLN2027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN2027SS is Designed for Class A Linear Applications up to 2.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 6.0 dB at 0.5 W/2.0 GHz • Omnigold Metalization System


    Original     		PDF MLN2027SS MLN2027SS 8-32U ASI10631

    MRF627

    Abstract: MRF-627
    Text: MRF627 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF627 is Designed for Class C, FM Land Mobile and FM Base Applications up to 470 MHz. PACKAGE STYLE .205 4L PILL FEATURES: D • Common Emitter • PG = 13 dB at 0.5 W/470 MHz • Omnigold Metalization System


    Original     		PDF MRF627 MRF627 MRF-627

    ULBM05

    Abstract: No abstract text available
    Text: ULBM05 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM05 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .205 4L PILL FEATURES: D • Common Emitter • PG = 13 dB at 0.5 W/470 MHz • Omnigold Metalization System


    Original     		PDF ULBM05 ULBM05 ASI10674

    5B TRANSISTOR

    Abstract: ASI10642
    Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5B is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V 31.8 W @ TC = 25 C -65 OC to +200 OC


    Original     		PDF 8-32UNC ASI10642 5B TRANSISTOR ASI10642

    ASI10631

    Abstract: MLN2027SS
    Text: MLN2027SS NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The ASI MLN2027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS IC 10 A VCB 60 V VCE 35 V PDISS 140 W @ TC = 25 OC


    Original     		PDF MLN2027SS MLN2027SS 8-32UNC ASI10631 ASI10631

    976 transistor

    Abstract: ASI10625 MLN1030SS
    Text: MLN1030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN1030SS is Designed for D A FEATURES: C • • • Omnigold Metalization System B G E F H #8-32UNC MAXIMUM RATINGS J IC 10 A VCB 60 V VCE 35 V inches / mm inches / mm


    Original     		PDF MLN1030SS MLN1030SS 8-32UNC ASI10625 976 transistor ASI10625

    976 transistor

    Abstract: ASI10674
    Text: ULBM0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L PILL The ASI ULBM0.5 is Designed for D FEATURES: • • • Omnigold Metalization System A C B MAXIMUM RATINGS F IC 0.4 A VCBO 28 V VCEO 12 V G 4.0 V VEBO O PDISS 2.5 W @ TC = 25 C


    Original     		PDF ASI10674 976 transistor ASI10674

    mrf890

    Abstract: No abstract text available
    Text: MRF890 NPN SILICON RF POWER TRANSISTOR E DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. D 2 1 3 A C FEATURES: B • Pg = 9.0 dB min. @ 900 MHz • P1dB = 2.0 Watts min. at 900 MHz


    Original     		PDF MRF890 MRF890 8-32U

    CBSL2SS

    Abstract: ASI10868 8-32UN
    Text: CBSL2SS NPN SILICON RF POWER TRANSISTOR E DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI CBSL2SS is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. D A C FEATURES: • Pg = 9.0 dB min. @ 960 MHz • P1dB = 2.0 Watts min. at 960 MHz


    Original     		PDF 8-32UN ASI10868 CBSL2SS ASI10868

    MRF838A

    Abstract: MRF838
    Text: MRF838A NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz. D 3 4 A 2 C 1 FEATURES INCLUDE: B G • Gold Metallization • Emitter Ballasting


    Original     		PDF MRF838A MRF838A 8-32UNC MRF838

    MLN1030SS

    Abstract: 832u ASI10625
    Text: MLN1030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030SS is Designed for Class A Linear Applications up to 1.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 10 dB at 1.0 W/1.0 GHz • Omnigold Metalization System


    Original     		PDF MLN1030SS MLN1030SS 8-32U ASI10625 832u ASI10625

    MLN2030SS

    Abstract: ASI10633
    Text: MLN2030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN2030SS is Designed for Class A linear Applications up to 2.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 10 dB at 1.0 W/2.0 GHz • Omnigold Metalization System


    Original     		PDF MLN2030SS MLN2030SS 8-32UNC ASI10633

    ASI10641

    Abstract: No abstract text available
    Text: TVU0.5A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5A is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V VEBO 3.5 V J inches / mm


    Original     		PDF 8-32UNC ASI10641 ASI10641

    ASI10621

    Abstract: MLN1027SS
    Text: MLN1027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN1027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS 10 A IC MAXIMUM MINIMUM DIM inches / mm inches / mm


    Original     		PDF MLN1027SS MLN1027SS 8-32UNC ASI10621 ASI10621

    TVU0.5A

    Abstract: B-976 transistor ASI10641
    Text: TVU0.5A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5A is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .205 4L STUD D FEATURES: • Common Emitter • PG = 9.5 dB at 0.5 W/860 MHz • Omnigold Metalization System


    Original     		PDF 8-32UNC ASI10641 TVU0.5A B-976 transistor ASI10641

    H83069RF

    Abstract: TDA1 589 Nippon capacitors
    Text: REJ09B0006-0400H 16 H8/3069RF-ZTAT TM Hardware Manual Renesas 16-Bit Single-Chip Microcomputer The revision list can be viewed directly by clicking the title page. The rivision list summarizes the locations of revisions and additions. Details should always


    Original     		PDF REJ09B0006-0400H H8/3069RF-ZTAT 16-Bit H8/3069RF-ZTATTM H83069RF TDA1 589 Nippon capacitors

    LVDM976

    Abstract: LVDM977 SN75976ADGG SN75LVDM976 SN75LVDM976DGG SN75LVDM976DGGR SN75LVDM977
    Text: SN75LVDM976 SN75LVDM977 www.ti.com SLLS292B – APRIL 1998 – REVISED JANUARY 2000 9-CHANNEL DUAL-MODE TRANSCEIVERS FEATURES • • • • • • • • • • DGG PACKAGE TOP VIEW 9 Channels for the Data and Control Paths of the Small Computer Systems Interface (SCSI)


    Original     		PDF SN75LVDM976 SN75LVDM977 SLLS292B LVDM976) LVDM977) 20-Mil SN75976ADGG LVDM976 LVDM977 SN75976ADGG SN75LVDM976 SN75LVDM976DGG SN75LVDM976DGGR SN75LVDM977

    Q4431

    Abstract: No abstract text available
    Text: 2SC » • û235bQS 000442*1 fl ■ SIEficÄ_., PNP Silicon Darlington Transistors BO 976 BD 978 SIEMENS AKTIENGESELLSCHAF 0 ^ 2 9 ßD 980 B D 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay


    OCR Scan     		PDF 235bQS Q4431 T-33-31 100oC; fl235bQS QQQ4432 j-33-31 BD976 BD978 BD980

    74LS29

    Abstract: No abstract text available
    Text: TYPES SN54LS295B, SN74LS295B 4-BIT RIGHT-SHIFT LEFT-SHIFT REGISTERS WITH 3-STATE OUTPUTS O C T O B E R 1 976— R E V IS E D D E C E M B E R SN 54LS295B 'LS296B Offers Three Times the Sink-Current Capability of 'LS295A I OR W PACKAGE S N 7 4 L S 2 9 5 B . . . D, J O R N P A C K A G E


    OCR Scan     		PDF SN54LS295B, SN74LS295B LS296B LS295A 54LS295B 74LS29

    D965

    Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
    Text: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay


    OCR Scan     		PDF 235bQS Q62702-D963 Q62702-D965 Q62702-D967 fl23SbOS QQQ4432 0443Z BD976 T-33-31 BD980 D965 b098 bd98 d965 hfe BD980 Q62702-D967 QQQ4430