E222870
Abstract: No abstract text available
Text: B&B ELECTRONICS SCPx11-0712r001ds page 1/2 2011 B&B Electronics. All rights reserved SCP211 & SCP311 RS-232 to RS-422/485 Converters • Isolated and Non-Isolated Models ESD Protection - 8 kV Contact, 15 kV Air Rugged Metal Case Wide Operating Temperature Models
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SCPx11-0712r001ds
SCP211
SCP311
RS-232
RS-422/485
RS-422/485
E222870
E222870
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Untitled
Abstract: No abstract text available
Text: B&B ELECTRONICS USO9ML2-0712ds page 1/2 2011 B&B Electronics. All rights reserved USO9ML2 USB to RS-232 Converter With Isolation • 2 kV Isolation ESD Protection - 4 kV Contact, 8 kV Air Compact In-Line Case USB 2.0 Full Speed Compatible 12 Mbps
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USO9ML2-0712ds
RS-232
EN55022
EN61000-6-1
EN61000-4-2
EN61000-4-3
80-1000MHz;
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Untitled
Abstract: No abstract text available
Text: B&B ELECTRONICS USR60x-2112ds page 1/4 2011 B&B Electronics. All rights reserved USR602 & USR604 Heavy Duty USB to Serial Converters With Port to Port Isolation • 2 kV Port to Port Isolation ESD Protection - 8 kV Contact, 15 kV Air Rugged Metal Case & High Retention USB Connector
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USR60x-2112ds
USR602
USR604
RS-232/422/485
USR602
USR604
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SSB1526-A
Abstract: din 50010 B84143-B
Text: 3-Line Filters B84143-B*-R110 for Converters and Power Electronics B84143-B*-R112 Power line filters for three-phase systems Rated voltage 480/275 and 520/300 V~, 50/60 Hz Rated current 8 to 200 A Construction • Three-line filter ■ Metal case ■ Book size
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B84143-B
-R110
-R112
SSB1526-A
din 50010
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Frequency Mixer - SRA-17WH Frequency Mixers LO Power Level 17 dBm Pin Configuration Port LO RF IF Gnd Ext. Case Gnd Not Used 8 1 3,4^ 2,5,6,7 SRA-17WH current ratings: a. RF power, 200mW b. Peak IF current, 40mA print this page
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200mW
SRA-17WH
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B84143-B
Abstract: B84143-B12-R B84143-B16-R B84143-B25-R B84143-B36-R B84143-B80-R B84143-B8-R
Text: 3-Line Filters B84143-B*-R for Converters and Power Electronics Power line filters for three-phase systems Rated voltage 440/250 V~, 50/60 Hz Rated current 8 A to 80 A Construction • Three-line filter ■ Metal case Features ■ Very high insertion loss
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B84143-B
B84143-B12-R
B84143-B16-R
B84143-B25-R
B84143-B36-R
B84143-B80-R
B84143-B8-R
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2N117
Abstract: 2n117 texas ScansUX7
Text: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . DL-S B 8 8 9 6 , M A R C H 1 9 6 8 9 to 2 0 beta spread Spedficaly designed for high gaia at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.
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2N117
2n117 texas
ScansUX7
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Untitled
Abstract: No abstract text available
Text: ESC D • 023SbG5 OOOHÖbS □ « S I E G BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T - 3 3 - i3 B U X 8 2 and B U X 8 3 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors
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023SbG5
05-KO
BUX83
23SbOS
BUX82
023Sb
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2N118
Abstract: X10-4 I15-0 ScansUX7
Text: TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . D L -S 5 8 8 9 7 , M A R C H 1 9 5 8 18 to 4 0 beta sprawl SpedficaHy designa i for Ugh gaia at htgii t— porat— s mochanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.
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2N118
X10-4
7S222
I15-0
ScansUX7
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2N117
Abstract: 2n117 texas
Text: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.
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2N117
2n117 texas
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2N118A
Abstract: ScansUX7
Text: TYPE 2N118A N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 8 9 8 , M A R C H 1 9 6 8 - R E V I S E D M A R C H 1 9 7 3 18 to 8 6 beta spread Specifically designed for Ugh gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.
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2N118A
1968-revised
ScansUX7
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2N118A
Abstract: No abstract text available
Text: TYPE 2N118A N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN NO. DL-S 7 3 8 9 8 , M A R C H 1 9 6 8 - R E V I S E D M A R C H 1 9 7 3 18 to 86 beta spread Specifically designed for high gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.
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2N118A
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Untitled
Abstract: No abstract text available
Text: W005G THRU W10G GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1 . 5 Amperes FEATURES Case Style WPG ^ 0 .3 8 8 9 .8 6 n u o to b a \ ♦ Plastic material has Underwriters Laboratory Flammability Recognition 94V-0
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W005G
E54214
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2N119
Abstract: No abstract text available
Text: TYPE 2N119 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58899, M A R C H 1958 36 to 8 6 beta spread Specifically designed for high gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grains.
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2N119
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diode skn 21
Abstract: SKN 21 DIODE K3M12 SK 782 k3m6 diode skn 240 semikron semikron sk 240 000E-19 K3-M12 semikron k3m12 i s
Text: s e MIKRON Section 8: Rectifier Diodes Sum m ary of Types Type • New type 1 N 4001 . 4007 G SK 1 SK 1 G SK 3 V rrm V rsm Ifrms IfaV sin. 180 V A A 50 . 1 000 3 @ T case °C 1,1 751> Ifsm 10 ms 25 °C i2t 10 ms 25 °C A A2s 35 6,1 E 32 B 8-5 B 8-9 1 200 . 1 600
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1/200-M
P8/180
diode skn 21
SKN 21 DIODE
K3M12
SK 782
k3m6
diode skn 240 semikron
semikron sk 240
000E-19
K3-M12
semikron k3m12 i s
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Untitled
Abstract: No abstract text available
Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for
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23SbOS
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Untitled
Abstract: No abstract text available
Text: B 4 0 C 1 O O O G T H R U B 3 8 0 C 1 0 0 0 G GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 65 to 600 Volts Forward Current -1.0 Ampere FEATURES Case Style WPG ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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B40C1000G
B380C1000G
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bux diode
Abstract: BUX28 Q62702-U258 Q62901-B11-A Q62901-B50 siemens power transistor bux c T3329 22-16 diode
Text: ESC D • 0235bOS QQQ4ÔS4 1 ■ S I E 6 , T-33-29 NPN Silicon Darlington Power Transistor BUX28 Not for new d e sign - SIEMENS AKTIEN6ESELLSCHAF B U X 2 8 is a triple diffused monolithic N PN dariington power transistor in TO 3 case 3 A 2 DIN 41872 . The collector is electrically connected to the case. The resistor between
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fl235bOS
0004fiSM
T-33-29
BUX28
Q62702-U258
Q62901-B11-A
Q62901-B50
fl235b05
D004fi5b
T-33-29
bux diode
BUX28
Q62702-U258
Q62901-B11-A
Q62901-B50
siemens power transistor
bux c
T3329
22-16 diode
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BSY17
Abstract: BSY18 transistor w1w 2N708 BSY62 2N743 BSY62A BSY62B Q60218-Y17 Q60218-Y18
Text: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, B SY 62 and B S Y 63 are double-diffused epitaxial N PN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec trically connected to their cases. Transistor B S Y 17 corresponds to type 2N 7 4 3 ,
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BSY17,
BSY18,
2N743,
2N708.
Q60218-Y17
Q60218-Y18
BSY62A
Q60218-Y62-A
BSY62B
Q60218-Y62-B
BSY17
BSY18
transistor w1w
2N708
BSY62
2N743
Q60218-Y17
Q60218-Y18
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b500c1000
Abstract: No abstract text available
Text: B.C 1000 Silicon-Bridge Rectifiers h- 19 1 Typ + ”V Nominal current Nennstrom - - 2x45°—1 - t Silizium-Brückengleichrichter - - 5 — AN 1.0 A Alternating input voltage Eingangswechselspannung — 40 40.500 V JÓ0 8 — Pastic case Kunststoffgehäuse
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UL94V-0
B125C
B250C
B380C
B500C
R0D1RS14
DGG174
000017S
b500c1000
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03gm
Abstract: IRC W-500 Transistor BSX 95
Text: 25C D • A 2 3 £ b Q 5 0 D Q M Ö 1 S 2. ■ S I E 6 BSX48 BSX49 NPN Silicon Planar Transistors - S I E M E N S A K T I E N 6 E S E L L S C H A F B SX 4 8 and BSX 49 are double diffused epitaxial silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected to the case.
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BSX48
BSX49
03gm
IRC W-500
Transistor BSX 95
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Untitled
Abstract: No abstract text available
Text: 25 Amp Three Phase B rideje Rectifiers J ANTX 4 8 3 -1 METAL CASE ^ tc 4 8 3 - 3 — E - Dim. Inches F 1— G DIA. 2-PLCS. A A , 2 ( * 3 - Æ 11 î Ii I 1 N y* i i i A B C D1 D2 E F G H J K L1 L2 L3 M N P R S T & \ ~ V ENCAPSULATION S 1— SEE NOTE 3 Notes:
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JANTX483â
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transistor w1w
Abstract: 2N708 2N743 BSY17 BSY18 BSY62A BSY62B Q60218-Y17 Q60218-Y18 Q60218-Y62-A
Text: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, BSY 62 and B S Y 63 are double-diffused epitaxial NPN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec trically connected to their cases. Transistor B S Y 17 corresponds to type 2 N 7 4 3 ,
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BSY17,
BSY18,
2N743,
2N708.
Q60218-Y17
Q60218-Y18
BSY62A
Q60218-Y62-A
BSY62B
Q60218-Y62-B
transistor w1w
2N708
2N743
BSY17
BSY18
Q60218-Y17
Q60218-Y18
Q60218-Y62-A
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62320 rectifier
Abstract: e62320
Text: I Bulletin 12715 rev. E 0 8 /97 International IQR Rectifier m b & jb series SINGLE PHASE BRIDGE Power Modules 10 A 25 A 35 A Features • Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package, electrically insulated case
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100JB
250JB
62320 rectifier
e62320
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