a7338
Abstract: B43503-C157-M transistor c337 503-b 7338 transistor c337 transistor L227M 5338-M 8108-M B3-15
Text: Snap-in-Kondensatoren LL-Typ B 41 503 B 43 503 Für professionelle Schaltnetzteile Einsatz bis 105 ˚C Aufbau ● Schaltfest, gepolt ● Al-Gehäuse, voll isoliert ● Snap-in-Lötanschlüsse für Selbsthalterung ● Minuspolkennzeichnung auf Gehäuseoberfläche
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SIEMENS B 58 470
Abstract: No abstract text available
Text: Snap-in-Kondensatoren LL-Typ B 41 503 B 43 503 Für professionelle Schaltnetzteile Einsatz bis 105 ˚C Aufbau ● ● ● ● ● ● ● Schaltfest, gepolt Al-Gehäuse, voll isoliert Snap-in-Lötanschlüsse für Selbsthalterung Minuspolkennzeichnung auf Gehäuseoberfläche
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B41503
F/400
SIEMENS B 58 470
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Untitled
Abstract: No abstract text available
Text: TOP VIEW B C Parallel Connection Specifications -253 -503 -104 -154 -204 -304 -454 -654 -105 -155 -255 -253 -503 -104 -154 -204 -304 -454 -654 -105 -155 -255 Physical Parameters Inches A 1.058 ± 0.005 B 0.870 ± 0.005 C 0.210 Max. D 0.200 Max. E 0.423 Max.
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CM6296R
CM6296
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L2227M
Abstract: C2227 J547 J4109 d337m C2477 siemens 230 97 surge B5159 D337 Siemens professional
Text: Snap-In Capacitors LL Grade B 41 503 B 43 503 For professional switch-mode power supplies Operation at temperatures up to 105 °C Construction ● ● ● ● ● ● ● Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board
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pro00
F/400
L2227M
C2227
J547
J4109
d337m
C2477
siemens 230 97 surge
B5159
D337
Siemens professional
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M337
Abstract: 503b C2477 D687 B43503-G476-M siemens 230 97 surge B41503-A3688-M capacitor 2200 uF siemens
Text: Snap-In Capacitor 105 °C B 41 503 B 43 503 Not for new design LL grade For professional switch-mode power supplies Construction ● ● ● ● ● ● Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board
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F/400
M337
503b
C2477
D687
B43503-G476-M
siemens 230 97 surge
B41503-A3688-M
capacitor 2200 uF siemens
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Untitled
Abstract: No abstract text available
Text: BCR 503 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 503 XAs Pin Configuration 1=B 2=E Package
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VPS05161
EHA07184
OT-23
Oct-19-1999
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x9c102/103/104/503
Abstract: X9C103 X9C104 AN42 AN44 AN50 AN52 AN53 AN71 AN73
Text: APPLICATION NOTES A V A I L A B L E AN42 • AN44–48 • AN50 • AN52 • AN53 • AN71 • AN73 Terminal Voltage ±5V, 100 Taps X9C102/103/104/503 X9C102/103/104/503 E2POT Nonvolatile Digital Potentiometer FEATURES DESCRIPTION • • The Xicor X9C102/103/104/503 is a solid state nonvolatile potentiometer and is ideal for digitally controlled
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X9C102/103/104/503
X9C102/103/104/503
X9102/103/104/503
X9C103
X9C104
AN42
AN44
AN50
AN52
AN53
AN71
AN73
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Siemens matsushita capacitor ll grade
Abstract: siemens 230 97 surge B41538 j733
Text: Snap-In Capacitors LL Grade B 41 503 B 43 503 For professional switch-mode power supplies Operation at temperatures up to 105 °C Construction ● ● ● ● ● ● ● Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board
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AN42 Xicor
Abstract: XICOR AN42 AN44 AN50 AN52 AN53 AN71 AN73 X9C102
Text: APPLICATION NOTES A V A I L A B L E AN42 • AN44–48 • AN50 • AN52 • AN53 • AN71 • AN73 Terminal Voltage ±5V, 100 Taps X9C102/103/104/503 X9C102/103/104/503 E2POT Nonvolatile Digital Potentiometer FEATURES DESCRIPTION • • The Xicor X9C102/103/104/503 is a solid state nonvolatile potentiometer and is ideal for digitally controlled
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X9C102/103/104/503
X9C102/103/104/503
X9102/103/104/503
9-A-0093
AN42 Xicor
XICOR
AN42
AN44
AN50
AN52
AN53
AN71
AN73
X9C102
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AN44-48
Abstract: X9102 X9C102 AN42 AN44 AN50 AN52 AN53 AN71 AN73
Text: APPLICATION NOTES A V A I L A B L E AN42 • AN44–48 • AN50 • AN52 • AN53 • AN71 • AN73 Terminal Voltage ±5V, 100 Taps X9C102/103/104/503 X9C102/103/104/503 E2POT Nonvolatile Digital Potentiometer FEATURES DESCRIPTION • • The Xicor X9C102/103/104/503 is a solid state nonvolatile potentiometer and is ideal for digitally controlled
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X9C102/103/104/503
X9C102/103/104/503
X9102/103/104/503
AN44-48
X9102
X9C102
AN42
AN44
AN50
AN52
AN53
AN71
AN73
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Q62702-C2370
Abstract: No abstract text available
Text: BCR 503 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ Type Marking Ordering Code Pin Configuration BCR 503 XAs 1=B Q62702-C2370 Package 2=E 3=C SOT-23 Maximum Ratings
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Q62702-C2370
OT-23
Nov-27-1996
Q62702-C2370
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L0211
Abstract: 4B08B-503-RC
Text: Features 4B08 -500 97 B-50 • 3 40 ■ ■ Overvoltage/lightning protection to ITU-T K.20 Standard “off-the-shelf” design Typical application is secondary protection on telecom line cards 4B08B-503-RC - Surge Line Protection Module Electrical Characteristics
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4B08B-503-RC
e/L0211
L0211
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SD090SA30A/B/C Technical Data Data Sheet 503, Rev.- SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
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SD090SA30A/B/C
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 503 NPN Silicon Digital Transistor > Switching circuit, inverter, interface circuit, drive circuit • Buijt in bias resistor R i= 2 .2 k ii, R 2 = 2 .2 k ii Pin Configuration BCR 503 XAs 1 =B II CO Q62702-C2370 Package O Marking Ordering Code
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Q62702-C2370
OT-23
0E35bD5
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Untitled
Abstract: No abstract text available
Text: Snap-In Capacitors L L Grade B 41 503 B 43 503 For professional switch-mode power supplies Operation at temperatures up to 105 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board
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KAL0274-A
A53SbOS
S235bOS
00742T3
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BROWN BOVERI
Abstract: R50320 S50310 R50310 R50330 R50340 R50360 S50320 S50330 S50340
Text: BBC •FMC B R O W N , B O V E R I & CIE AKTIENGESELLSCHAFT MANNHEIM Silicon Power Rectifiers BROWN BOVERI G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 7 2 7 Postfach 200, D -6840 Lam pertheim Series 503 250 Amperes Average
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D-6840
S50310
R50310
S50320
R50320
S50330
R50330
S50340
R50340
S50360
BROWN BOVERI
R50360
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TRANSISTOR b 772 p
Abstract: No abstract text available
Text: SIEMENS BCR 503 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drive circuit » Built in bias resistor R1=2.2kiî, R2=2.2k£î XAs Q62702-C2370 1= B Package II CO BCR 503 Pin Configuration O Marking Ordering Code LU II CM
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Q62702-C2370
OT-23
300ns;
TRANSISTOR b 772 p
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PP3-002B
Abstract: No abstract text available
Text: m m [in ] ; 1 : A ËË S M B LY TYPE DC PLUG 0 5 .5 X 0 2 .5 X 9 .5L C U ! Inc. d e s c rip tio n 9615 SW Allen Blvd. #103 B eaverton, OR 97005 Tel: 503/643-4899 FAX: 503/643-6129 7 6 5 ABS 4 BRASS N IC K E L 3 BRASS N IC K E L 2 BRASS N IC K E L 1 ROM NO
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PP3-002B07
PP3-002B
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DIODE RK 306
Abstract: tr/DIODE RK 306
Text: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.
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SD-503
SD-503B,
SD-503
DIODE RK 306
tr/DIODE RK 306
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Untitled
Abstract: No abstract text available
Text: 9615 SW A llen, S u ite 103 B e a v e rto n , OR 97005 P h o n e : 503 6 4 3 —4899 8 0 0 -2 7 5 -4 8 9 9 Fax: (503) 3 7 2 -1 2 6 6 W ebsite: Trww.oui.com Z Z k C U l IN C Specifications 1 2 Part No. GF0576 Nominal Size 57 3 Impedance 4 Resonance 380 Hz.±
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GF0576
GF0576
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Untitled
Abstract: No abstract text available
Text: Series BNC - 50 Q Bulkhead Jack Part Number Einbaukuppler Panel Piercing Remarks Packing Unit 51 K 501 -200 N4 B 1 a = 13.8, b = 26, c = 14.4 100 51 K 502-200 N4 B 5 a = 12.5, b = 26, c = 12.7 100 51 K 503-200 N4 B 18 a = 12.5, b = 26, c = 14 100 51 K 504-200 N4 B 2
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D-84526
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nec 2502 4 pin
Abstract: UPD75308 T-41-67 PD6120 PH503 photo amplifier application circuit c1339g 1339g Micro Servo
Text: N E C 30E D ELECTRONICS INC b4S7525 G0 a i b 3 1 2 • PHOTO DIODE PH 503 PIN PHOTO DIODE BUILT IN l-V AMPLIFIER DETECTOR FOR CD, OPTICAL DISC MEMORY P A C K A G E D IM E N S IO N S U nit : mm 6.9 ±0.2 P H 503 is 6 elements P IN Photo Diode built in l-V A m p li
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b4S7525
PH503
1339G
PD6353G
PH503
UPD6355G
UPD6353G
SE303A-C
PH302C,
PH310
nec 2502 4 pin
UPD75308
T-41-67
PD6120
photo amplifier application circuit
c1339g
1339g
Micro Servo
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"DC Power Jack"
Abstract: No abstract text available
Text: INSULATION RESISTANCE: 100M OHMS MIN @ 500V DC WITHSTAND VOLTAGE: 500V AC FOR 1 MINUTE LIFE: 5,000 CYCLES NUT 2 [0.079] G U I STACK 9615 SW Allen, S u ite 103 B e a v e rto n , OR 97005 P h o n e : 503 6 4 3 - 4 8 9 9 8 0 0 -2 7 5 — 4899 Fax: (503) 6 4 3 - 6 1 2 9
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J-011A
"DC Power Jack"
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BROWN BOVERI
Abstract: B 170 BROWN BOVERI 1N1124 1N1344A N1346 S2010 1N1614 Diodes N1124 S2060 1N1342
Text: BROWN BOVERI «FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Avalanche Power Rectifiers BBC Geschäftsbereich Halbleiter und Stromrichter Telefon 06206 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 20 16 Amperes Average
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D-6840
S2010
R2010
1N1342,
1N1342A,
1N1342B,
1N1582,
1N1613,
N2492
S2020
BROWN BOVERI
B 170 BROWN BOVERI
1N1124
1N1344A
N1346
1N1614 Diodes
N1124
S2060
1N1342
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