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    Skyworks Solutions Inc AWB7123HM41P8

    IC AMP HSDPA 1.93-1.99GHZ 14SMD
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    AWB7123HM41P8 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AWB7123HM41P8 Skyworks Solutions RF/IF and RFID - RF Amplifiers - IC AMP HSDPA 1.93GHZ-1.99GHZ MOD Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System


    Original
    PDF AWB7123 AWB7123

    AWB7123HM41P8

    Abstract: awb7123
    Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System


    Original
    PDF AWB7123 AWB7123 AWB7123HM41P8

    Untitled

    Abstract: No abstract text available
    Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System


    Original
    PDF AWB7123 AWB7123

    Untitled

    Abstract: No abstract text available
    Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System


    Original
    PDF AWB7123 AWB7123

    AWB7123

    Abstract: AWB7123HM41P8
    Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System


    Original
    PDF AWB7123 AWB7123 AWB7123HM41P8

    Untitled

    Abstract: No abstract text available
    Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System


    Original
    PDF AWB7123 AWB7123

    Untitled

    Abstract: No abstract text available
    Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System


    Original
    PDF AWB7123 AWB7123