Untitled
Abstract: No abstract text available
Text: TEMIC TCSS1100/2100 S e m i c o n d u c t o r s Transmissive Optical Sensor Description T his device has a com pact construction where the em itting-light sources and the detectors are located face to face o n the sam e optical axes. T he operating w avelength is 950 nm. The detector consists of a
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TCSS1100/2100
14-Jurt-96
TCSS1100
14-Jun-96
TCSS2100
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K6650
Abstract: OP245A OP245B OP245C OP245D OP555 OP565
Text: 0 .O P IE K Product Bulletin OP245A June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP245A, OP245B, OP245C, OP245D Features • Mechanically and spectrally matched to the O P555 and OP565 series devices • W avelength matched to silicon’s peak
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OP245A
OP245A,
OP245B,
OP245C,
OP245D
OP555
OP565
OP245
K6650
K6650
OP245B
OP245C
OP245D
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT 7 ,8 0 PIN PART NUMBER REV. LD S -A 41 2 B I- S U G 4,75±0,75 [0,187±0,030] [ 0 ,3 0 7 ] 14 E LE C T R O -O P T IC A L CHARACTERISTICS Ta = 25 'C 19,00 [ 0 ,7 4 8 ] 15,24 PARAM ETER [ 0, 6001 MIN TYP PEAK W AVELENGTH UNITS 2.6 Vf 5.0
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SSL-LX305F4YD
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. S S L - L X 3 0 5 F 4 Y D —1 2V 0 3 .0 0 [ 0 0 ,1 1 8 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta =25'C PARAM ETER TYP PEAK W AVELENGTH 585 R EV ER S E V O LTAG E 1.0 0 r \ UNITS 1 4 ,0 5.0 Vf AXIAL INTENSITY 30 Vr mcd
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SSL-LX305F4YDâ
SSL-LX305F4YD
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alphanumeric 14 segment display 16 pin
Abstract: No abstract text available
Text: PART NUMBER 0 LDS —E 3 9 0 2 R I UNCONTROLLED DOCUMENT REV. E.C.N. NUMBER AND REVISION COMMENTS E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 'C MIN P EAK W AVELENGTH REVERSE VOLTAGE 20.32 [0.800] 24.00 [0.945] TYP lf = 1 DmA MAX UNITS 565 G R EEN )
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E3902RI
100jjA
94ALL
alphanumeric 14 segment display 16 pin
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SSL-LX509F3SRD
Abstract: No abstract text available
Text: DRAWING NUMBER REV SSL-LX509F3SRD C ELECTRO -O PTICAL CHARACTERISTICS TA = 2 5 PARAM ETER MIN TYP M AX P E A K W AVELENGTH 66 0 RED FORW ARD VO LTAGE 1.7 2.2 R E V ER S E VO LTAG E VIEWING ANG LE v f vr I r = 1 OOuA m cd I f =20m A 1 60 2x theta E PO X Y LENS FINISH:
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SSL-LX509F3SRD
K10//S
SSL-LX509F3SRD
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ecg3100
Abstract: transistor p26 ECG3102 3102 TRANSISTOR ecg 100 transistor ECG3033 ECG3101 transistor p58 ECG3104 diagram DARLINGTON
Text: Infrared Detector Diodes E C G Type Description ECG3033 Infrared PIN Detector Diode Reverse Voltage V r [V M ax. D ark Current ID nA) M in Light Current IL(A<A) Pow er Dissipation P D Im W I Rise Time tr (nS) Typ Detection A n g le Typ Detection W avelength
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ECG3033
ECG3033
ecg3100
transistor p26
ECG3102
3102 TRANSISTOR
ecg 100 transistor
ECG3101
transistor p58
ECG3104
diagram DARLINGTON
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. SSL—LX3353SID ELE C T R O —O PTICAL CHARACTERISTICS Ta = 25‘ C I— PARAM ETER 3,00 [0,118] MIN PEAK W AVELENGTH 3.00 [ 0. 118] - 3 .8 0 [ 0 .150 ] 4.60 I [ 0. 181] 1.00 1.10 [0 .0 4 3 ] 1 [ 0 .0 3 9 ] MAX, l f= 2 0 m A
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LX3353SID
636nm
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT 0 3 .4 0 PART NUMBER REV. S S L — LX30FT14S0D [0 0 1 3 4 ] + E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T PARAM ETER PEAK W AVELENGTH 03.00 [00.118: R EV ER S E V O LTAG E 1 1 .0 0 J 1,20 [0 .0 4 7 ] [ 0 .0 3 9 ] M AX. o TYP
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LX30FT1
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SSL-LX306F4SIC
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. S S L-L X 3 06 F 4 S IC 03.40 [00.134] E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T + PARAM ETER MIN PEAK W AVELENGTH i UNITS 2 .0 TEST CÛND nm 2 .5 Vf Vr Ir = 1 0O/uA AXIAL INTENSITY 1000 mcd If = 20mA VIEWING A N G LE
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SSL-LX306F4SIC
SSL-LX306F4SIC
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. SSL-LX3353SOD E L E C T R O - O P T I C A L C H A R A C T E R IS T IC S Ta = 25 ‘ C I— PAR AM ETER 3,00 [0,118] MIN P EA K W AVELEN G TH 3.00 [ 0. 118] 3 .8 0 - [ 0 .150 ] 4.60 I [ 0. 181] 1.00 1.10 [0 .0 4 3 ] 1
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SSL-LX3353S0D
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT 4,00 [0 .1 5 7 ] PART NUMBER REV. SSL—LX3T453SYD 3,00 CO.118] E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 25‘ C 4,50 [0 ,1 7 7 : PARAM ETER MIN PEAK W AVELENGTH f FORW ARD V O LTAG E 5 .7 0 [0 .2 2 4 ] R EV ER S E V O LTAG E
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LX3T453SYD
10OfjA
IMDRMA11CN
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV, A 0 3 .4 0 PART NUMBER REV. S S L — LX30FT1 4SRD A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & REDRAWN IN 3D. DATE 4.20.01 [0 0 1 3 4 ] + E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T PARAM ETER PEAK W AVELENGTH
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LX30FT1
DISSI660nm
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. S SL —LX3ARG4SYC A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & DATE REDRAWN IN 3D. 4 .1 0 .0 1 0 3 .4 0 [0 0 .1 3 4 ] E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T PARAM ETER MIN PEAK W AVELENGTH
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV. PART NUMBER SSL-LX306F40D 03.40 [00.134] E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T + PA R A M ET[R MIN PEAK W AVELENGTH i UNITS TEST CÛND nm 2 .0 2 .5 Vf Vr Ir = 1 0O/uA AXIAL INTENSITY 30 mcd If = 20mA VIEWING A N G LE
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SSL-LX306F40D
630nm
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT 03,20 [00,126] PART NUMBER SSL—LX3044LSRD 0 2 .9 0 [0 0 .1 1 4 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25 T PARAM ETER MIN PEAK W AVELENGTH R EV ER S E V O LTAG E TVP 1 .7 5X i 2 .2 60 1.0 J 1 .0 0 [ 0 ,0 3 9 : VIEWING A N G LE SI 1.00 C0.039: _ f
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LX3044LSRD
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SSL-LX2583USBD
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. S S A - L X B 1 01 USBD 2 .0 0 [0 ,0 7 9 : E L E C T R O - O P T I C A L C H A R A C T E R IS T IC S T A = 2 5 X PAR AM ETER MIN P EA K W AVELEN G TH 1,5 0 5.50 [0 .2 1 7 ] 10 PL S. [ 0 , 0 5 9 ] — I I— M AX 4-70
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SSA-LXB101
DECL05URE
SSL-LX2583USBD
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Untitled
Abstract: No abstract text available
Text: Si PIN Photodiodes 2 Dim ensional Type No. Active Area Effective Size Activo Arca (mm) (mm2) Package O utline (P.49,50) Peak Spectral Response Sensitivity W avelength Range Ap A (nm) Ap S2506-04 2 .7 7 X 2 .7 7 a t\ 7.7 0.37 960 800 to 1100 920 320 to 1060
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S2506-04
S6786
S6036
S6036-01
S4707-01
S2973-01
S3321
S5573
S5052
S5077
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to56
Abstract: No abstract text available
Text: 830 nm single mode 50 mW laser in TO-56 ML1545 OVERVIEW C C C C C C C C C M L 1 5 4 5 i s a s i n g l e t r a n s v e r s e m o d e F a b ry - P e r o t l a s e r c h i p i n a T O - 5 6 can. Th e laser delivers 50 mW o utput power at the w avelen gth of 830 nm. The produ ct is desig ned for CW o peratio n with a low fast axis
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Original
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ML1545
L1528)
13-Mar-2008
ml1545
to56
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S3588-01
Abstract: S3590-01 S2744-01 S2744
Text: Large-area Si PIN Photodiodes P h o to S e n s itiv ity S T y p . T ype N o. R e m a rk s O u t* ’ lin e W in d o w * 2 M a te r ia l A c tiv e * 3 A re a S p e c tr a l R esponse R ange m m (n m ) Peak S e n sitivity W avelength Ap (n m ) 3 20 to 1060
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S3590-01
S2744-01
S3588-01
S3590-05
S3204-05
S3584-05
S3588-01
S2744
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LSC26XX
Abstract: LSC2644 edfa 1550 tec driver peltier
Text: That mL'fim PHEWLETT ACKARD DWDM 1.25 Gb/s DFB Laser Module with Integral Optical Isolator Technical Data LSC26XX Features D escription • Center W avelength betw een 1528 nm and 1602 nm • E xtended W avelengths for u se in system s requiring no am plifiers
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LSC26XX
5968-5629E
LSC2644
edfa 1550
tec driver peltier
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NKT7512
Abstract: No abstract text available
Text: Optoelectronic Devices Light Emitting Diodes C h ara cte ristics <9> 2 5 ° C M axim um ratings Type T amb= 2 5 ° C N K T 7001 N K T 7011 y RM V XF M pt o t w V F UF V m A ) 1/? mA 5 .0 3 .0 10 00 50 0 .1 5 0.1 < 1 .5 < 2 .3 50 (20) — Peak W avelength A
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NKT7512
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L14F1 PHOTOTRANSISTOR
Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW
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100mA
LED55C
LED55B
LED56
LED55CF
LED55BF
LED56F
l14g1
l14g2
L14F1 PHOTOTRANSISTOR
2n5777 phototransistor
Phototransistor L14F1
H11A1-H11A2
4n26 opto isolator
l14f1
L14F1 npn photo transistor
L14H2
H11A2
H15A1
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Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN109L Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity : I Ce l = 3-5 mA (min.) (at L = 100 lx) • Built-in filter to cutoff visible light for reducing am bient light noise • Peak sensitivity w avelength matched with infrared light emitting
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PN109L
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