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    AVALANCHE TRANSISTOR CIRCUITS FOR GENERATING Search Results

    AVALANCHE TRANSISTOR CIRCUITS FOR GENERATING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AVALANCHE TRANSISTOR CIRCUITS FOR GENERATING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smps circuit diagram of 300W

    Abstract: layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps 07n60 mosfet circuit diagrams AN-CoolMOS-04 ZVT Full bridge transformer IGBT 07N60 H-bridge 24 VOLT 80 AMP smps infineon cool MOSFET dynamic characteristic test 500 Watt Phase Shifted ZVT Power Converter
    Text: Application Note, V1.0, Apr. 2001 CoolMOS TM AN-CoolMOS-04 Introduction to Avalanche Considerations for CoolMOS TM in SMPS Applications Power Management & Supply N e v e r s t o p t h i n k i n g . Introduction to Avalanche Considerations for CoolMOSTM in SMPS Applications


    Original     		PDF AN-CoolMOS-04 2002-Sep. smps circuit diagram of 300W layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps 07n60 mosfet circuit diagrams AN-CoolMOS-04 ZVT Full bridge transformer IGBT 07N60 H-bridge 24 VOLT 80 AMP smps infineon cool MOSFET dynamic characteristic test 500 Watt Phase Shifted ZVT Power Converter

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
    Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General


    Original     		PDF

    2N2369 avalanche

    Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
    Text: Application Note 122 January 2009 Diode Turn-On Time Induced Failures in Switching Regulators Never Has so Much Trouble Been Had By so Many with so Few Terminals Jim Williams David Beebe Introduction A potential difficulty due to diode turn-on time is that


    Original     		PDF AN122 350ps an122f AN122-19 AN122-20 2N2369 avalanche 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz

    9A2 zener diode

    Abstract: zener 9A2 Avalanche Transistor Circuits for Generating power technics uis test
    Text: AR598 Avalanche Capability of Today’s Power Semiconductors http://onsemi.com R Borras, P Aloisi, D Shumate* ON Semiconductor, France, USA* Paper published at the EPE Conference ’93, Brighton 9/93. ARTICLE REPRINT Abstract. Power semiconductors are used to switch high currents in fractions of a second and therefore


    Original     		PDF AR598 AN843 AN784 9A2 zener diode zener 9A2 Avalanche Transistor Circuits for Generating power technics uis test

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF G0706

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
    Text: Application Note 94 May 2003 Slew Rate Verification for Wideband Amplifiers The Taming of the Slew Jim Williams INTRODUCTION Slew rate defines an amplifier’s maximum rate of output excursion. This specification sets limits on undistorted bandwidth, an important capability in A/D driver applications. Slew rate also influences achievable performance in


    Original     		PDF AN94-11 AN94-12 an94f 2N2369 AVALANCHE PULSE GENERATOR 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501

    zener 9A2

    Abstract: 9A2 zener diode uis test power technics AR598 AN784 AN843
    Text: AR598 Avalanche Capability of Today's Power Semiconductors http://onsemi.com R Borras, P Aloisi, D Shumate* ON Semiconductor, France, USA* Paper published at the EPE Conference ’93, Brighton 9/93. ARTICLE REPRINT Abstract. Power semiconductors are used to switch high currents in fractions of a second and therefore


    Original     		PDF AR598 r14525 AR598/D zener 9A2 9A2 zener diode uis test power technics AR598 AN784 AN843

    16f73

    Abstract: 74ACH14 cd4040 application note 16f73 rs232 LT1150 74ACH74 LSK389 equivalent 2N2369 avalanche 2N2369 AVALANCHE PULSE GENERATOR Notebook lcd inverter schematic
    Text: Application Note 113 August 2007 Power Conversion, Measurement and Pulse Circuits Tales From the Laboratory Notebook, 2005-2007 Jim Williams INTRODUCTION This ink marks LTC’s eighth circuit collection publication.1 We are continually surprised, to the point of near mystification, by these circuit amalgams seemingly limitless


    Original     		PDF an113f AN113-19 AN113-20 16f73 74ACH14 cd4040 application note 16f73 rs232 LT1150 74ACH74 LSK389 equivalent 2N2369 avalanche 2N2369 AVALANCHE PULSE GENERATOR Notebook lcd inverter schematic

    MJ11016 equivalent

    Abstract: DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS MJF16206 high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* MJ11016 equivalent DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100

    2N5337

    Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    1811P3C8

    Abstract: 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 1811P3C8 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original     		PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004

    BS170 MOTOROLA

    Abstract: MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original     		PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* BS170 MOTOROLA MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006

    rs-flip-flop

    Abstract: 16832G Q67000-A9421 TDA18831-4 tda 16833 g 1411 6 pin ic TDA16833 TDA168333 TDA16831 Q67000-A9420
    Text: Off-line SMPS Controller with 600 V Sense CoolMOS on Board TDA16831-4 Preliminary Data CoolSET Overview Features • PWM controller + sense CoolMOS attached in one compact package • 600 V avalanche rugged CoolMOS • Typical RDSon = 0.5 . 3.5 Ω at Tj = 25 °C


    Original     		PDF TDA16831-4 P-DSO-14-11 Q67000-A9420 Q67000-A9422 Q67000-A9389 rs-flip-flop 16832G Q67000-A9421 TDA18831-4 tda 16833 g 1411 6 pin ic TDA16833 TDA168333 TDA16831 Q67000-A9420

    uis test

    Abstract: ZXMN20B28K TO252-3L Avalanche Transistor Circuits for Generating electronic halogen transformer design electronic transformer halogen ZXMN10A08G ZXMN10A11G TIP 298 ZXMN10A25K
    Text: Issue Number | 001 21 October 2009 New Product Announcement ZXMN20B28K ZXMN15A27K MOSFETs optimised for Voice over Internet Protocol VoIP Diodes Incorporated has extended its family of MOSFETs tailored for VoIP communication equipment. The ZXMN20B28K and


    Original     		PDF ZXMN20B28K ZXMN15A27K ZXMN20B28K ZXMN15A27K ZXMN6A25N8 ZXMN6A08G OT223 ZXMN6A08E6 OT23-6 ZXMN6A11G uis test TO252-3L Avalanche Transistor Circuits for Generating electronic halogen transformer design electronic transformer halogen ZXMN10A08G ZXMN10A11G TIP 298 ZXMN10A25K

    UJT 2N2646

    Abstract: 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001
    Text: TVS/Zener Theory and Design Considerations Handbook HBD854/D Rev. 0, Jun−2005 SCILLC, 2005 Previous Edition © 2001 as Excerpted from DL150/D “All Rights Reserved’’ http://onsemi.com 1 Technical Information, Application Notes and Articles Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF HBD854/D Jun-2005 DL150/D NLAS3158/D UJT 2N2646 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001

    MC1391

    Abstract: MJW16212 transistor mjw16212 2N5337 2N6191 MC7812 MJF16212 MJH16212 MR856
    Text: ON Semiconductort MJW16212 * SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *ON Semiconductor Preferred Device POWER TRANSISTOR 10 AMPERES 1500 VOLTS – VCES 50 AND 150 WATTS The MJW16212 is a state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16212 MJW16212 r14525 MJW16212/D MC1391 transistor mjw16212 2N5337 2N6191 MC7812 MJF16212 MJH16212 MR856

    AN2344

    Abstract: STW9NK80Z STP11NM60FP STP9NK80Z Avalanche Transistor Circuits for Generating high power bjt 150w
    Text: AN2344 Application Note Power MOSFET avalanche characteristics and ratings Introduction Back in the mid-80s, power MOSFET manufacturers started to claim a new outstanding feature: Avalanche Ruggedness. Suddenly, new families of devices evolved, all with this “new” feature. The implementation


    Original     		PDF AN2344 mid-80s, AN2344 STW9NK80Z STP11NM60FP STP9NK80Z Avalanche Transistor Circuits for Generating high power bjt 150w

    TP12N10

    Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection


    OCR Scan     		PDF MJW16206 MJF16206 AN1040. TP12N10 je210 desaturation design 1200 volt npn MPF930 MTP8P10 MUR8100E ex 3863

    ex 3863

    Abstract: MJf16206
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use In horizontal deflection


    OCR Scan     		PDF MJF16206 MJW16206 AN1040. ex 3863

    transistor rc 3866

    Abstract: t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JP tM M IM M A IM M M F 1 M M l* aa M JI1M 04) • W f U M H w H M llD N I M P I M M U m M JM M M I SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors M JW 16212* The MJW16212 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It


    OCR Scan     		PDF MJW16212 AN1040. transistor rc 3866 t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor

    MPSG1000

    Abstract: mpsg10 AN1076 MJH16206 1076 transistor
    Text: _ _ _ ^ ^ ^ _ Or der th is docum ent b y A N 10 7O T MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1076 Sp e e d in g Up Horizontal O u tp u ts Prepared by Warren Schultz Motorola Discrete Applications August 1989 There are at least two w ays to speed up a horizontal


    OCR Scan     		PDF AN1076/D AN1Q76/D AN1076/D MPSG1000 mpsg10 AN1076 MJH16206 1076 transistor

    IR6000

    Abstract: IR-6000
    Text: Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR6000 INTELLIGENT HIGH-SIDE □MOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmft Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and


    OCR Scan     		PDF IR6000 IR6000 goes31, D-6380 005136b IR-6000

    wiring VDG 13 relay

    Abstract: IR6000 "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram R6000 DDE1363 SS452 D-6380
    Text: r ì Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR 6 0 0 0 INTELLIGENT HIGH-SIDE □IN/IOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmQ Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and


    OCR Scan     		PDF IR6000 R6000 IR6000 D-6380 wiring VDG 13 relay "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram DDE1363 SS452