OM55N10NK
Abstract: OM60N10NK OM75N05NK OM75N06NK
Text: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)
|
Original
|
PDF
|
|
ZTX415
Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
|
Original
|
PDF
|
ZTX415
200mA
620pF
100mA
20MHz
100MHz
ZTX415
transistor 200V 100MA NPN
AVALANCHE TRANSISTOR
DSA003766
3171 i.c
|
edge emitter LED
Abstract: AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413
Text: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators
|
Original
|
PDF
|
OT323
ZUMT413
20MHz
10KHz
edge emitter LED
AVALANCHE TRANSISTOR
avalanche
LED driver 110V
4.7nF
base, collector, emitter
partmarking 6 C
ZUMT413
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
|
Original
|
PDF
|
ZTX415
100mA
200mA
620pF
|
FMMT415
Abstract: No abstract text available
Text: FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation
|
Original
|
PDF
|
FMMT415
FMMT417
100mA
200mA
FMMT415
|
K1 transistor
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.
|
Original
|
PDF
|
FMMT413
J-STD-020
MILSTD-202,
DS33083
K1 transistor
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound
|
Original
|
PDF
|
FMMT415
FMMT417
AEC-Q101
J-STD-020
FMMT415-FMMT417
DS33084
|
NTE570
Abstract: avalanche ir 032
Text: NTE570 Silicon Controlled Avalanche Diode Absolute Maximum Ratings: Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Allowable Avalanche Current Square Wave Single Pulse 100µs , IZSM . . . . . . . . . . . . . . . . . . . 1.0A
|
Original
|
PDF
|
NTE570
NTE570
avalanche
ir 032
|
AVALANCHE TRANSISTOR
Abstract: FMMT417 ZTX413 ZTX415 4N7 CAPACITOR FMMT415 DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors
Text: Design Note 24 Issue 1 October 1995 The ZTX413 Avalanche Transistor Low Voltage Operation up to 50A standard transistors.The ZTX413 provides avalanche operation over a voltage range of 60 to 150V, and can handle pulse avalanche currents of up to 50A See Figure 1 . These features
|
Original
|
PDF
|
ZTX413
ZTX413
ZTX413,
ZTX415
FMMT415
FMMT417
ED-14,
DN24-1
AVALANCHE TRANSISTOR
4N7 CAPACITOR
DIODE 4N7
disc capacitor 4n7,
napoli
avalanche transistors
|
AVALANCHE TRANSISTOR
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use BAT54C SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers *
|
Original
|
PDF
|
BAT54C
OT323
ZUMT413
20MHz
10KHz
AVALANCHE TRANSISTOR
|
a2231
Abstract: laser LED AVALANCHE TRANSISTOR FMMT413 31AA u 413 DSA003693 CCP4 VF130
Text: SOT23 NPN SILICON PLANAR AVALANCHE PROVISIONAL FMMT413 TRANSISTOR DATASHEET ISSUE 2- MARCH I 1 1996 FEATURES * Avalanche * 50A Peak avalanche mode operation * Low inductance current E c packaging APPLICATIONS * Laser LED drivers * Fast edge * High speed PARTMARKING
|
Original
|
PDF
|
FMMT413
VF130V,
FMMT413
a2231
laser LED
AVALANCHE TRANSISTOR
31AA
u 413
DSA003693
CCP4
VF130
|
epoxy 5000 taitron
Abstract: ARS2535
Text: 35A Controlled Avalanche TVS ARS2535 35A Controlled Avalanche TVS Features • • • • High Power Capacity Avalanche Voltage 24 to 32V High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique • RoHS Compliance
|
Original
|
PDF
|
ARS2535
MIL-STD-202,
epoxy 5000 taitron
ARS2535
|
fuel injector mosfet
Abstract: automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector
Text: AN-1005 Rev. 1.0 POWER MOSFET AVALANCHE DESIGN GUIDELINES Application Note Tim McDonald Marco Soldano Anthony Murray Teodor Avram Page 1 of 17 TABLE OF CONTENTS Table of Figures Introduction Overview Avalanche Mode Defined Avalanche Occurrences In Industry Applications
|
Original
|
PDF
|
AN-1005
fuel injector mosfet
automotive injector
fuel injector driver FET
switching with IRFP450 schematic
injector MOSFET driver
INJECTOR
POWER MOSFET CIRCUIT
AN-1005
fuel injector test
solenoid injector
|
05P4417
Abstract: 05P5047
Text: 5SDA 05P50 5SDA 05P50 Old part no. DA 805-520-50 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability
|
Original
|
PDF
|
05P50
05P5017
05P4417
05P5027
05P4427
05P5037
05P4437
05P5047
05P4447
|
|
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation *
|
OCR Scan
|
PDF
|
001G35S
|
AVALANCHE TRANSISTOR
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * * Fast edge generation High speed pulse generators
|
OCR Scan
|
PDF
|
100hA
ZTX413
20MHz
AVALANCHE TRANSISTOR
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators
|
OCR Scan
|
PDF
|
001G35S
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche m ode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
|
OCR Scan
|
PDF
|
1070perations
|
Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSUE 2 - MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators
|
OCR Scan
|
PDF
|
FMMT413
FMMT413
7057fl
20MHz
|
BUZ32A
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type 1/ BUZ 32 200 V * DS 9.5 A Maximum Ratings Parameter Continuous drain current, Tc = 29 ‘C Pulsed drain current, Tc = 25 "C Avalanche current, limited by Tima% Avalanche energy, periodic limited by r j{max
|
OCR Scan
|
PDF
|
O-220
C67078-S1310-A2
BUZ32A
|
spark gap
Abstract: "silicon carbide" varistor curve tracer cost selenium diode silicon carbide varistor
Text: MICRO QUALITY / Application Notes SEM IC O N D U C TO R , INC. Controlled Avalanche Rectifiers Avalanche Large reverse biases, when applied to silicon rectifiers, can cause the rectifier to avalanche. The term “ avalanche' ’ refers to that critical reverse voltage at which further increases in voltage result in
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: AKBPC603 Thru AKBPC606 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER • FEATURES • Controlled avalanche series with 250V, 450V, 650V and 850V minimum avalanche ratings • Surge overload rating to 125A peak I • Ideal for printed circuit board Outline Drawing
|
OCR Scan
|
PDF
|
AKBPC603
AKBPC606
E106441
MIL-STD-202,
|
Untitled
Abstract: No abstract text available
Text: I BUZ11 BUZ11FI MAGNA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE FOR STANDARD PACKAGE ISOLATED PACKAGE UL RECOGNIZED,
|
OCR Scan
|
PDF
|
BUZ11
BUZ11FI
BUZ11
O-220
ISOWATT220
|
STK2N50
Abstract: No abstract text available
Text: SGS-THOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N 50 ' V dss R d s oii Id 500 V 6 Ü 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION
|
OCR Scan
|
PDF
|
STK2N50
OT-82
OT-194
STK2N50
|
