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    AVALANCHE MODE TRANSISTOR Search Results

    AVALANCHE MODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AVALANCHE MODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ZTX415

    Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


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    ZTX415 200mA 620pF 100mA 20MHz 100MHz ZTX415 transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c PDF

    ZTX415

    Abstract: AVALANCHE TRANSISTOR FMMT415 67A SOT 23 6 avalanche mode transistor avalanche pulse generator
    Text: Application Note 8 Issue 2 January 1996 The ZTX415 Avalanche Mode Transistor An Introduction to Characteristics, Performance and Applications Neil Chadderton Introduction Avalanche mode devices can provide extremely high switching speeds and are capable of producing current outputs


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    ZTX415 NS-25, AVALANCHE TRANSISTOR FMMT415 67A SOT 23 6 avalanche mode transistor avalanche pulse generator PDF

    edge emitter LED

    Abstract: AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413
    Text: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


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    OT323 ZUMT413 20MHz 10KHz edge emitter LED AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413 PDF

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    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


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    ZTX415 100mA 200mA 620pF PDF

    FMMT415

    Abstract: No abstract text available
    Text: FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation


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    FMMT415 FMMT417 100mA 200mA FMMT415 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP80P06P SPB80P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current


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    SPP80P06P SPB80P06P O263-3) P-TO220-3 PG-TO263-3 PDF

    AVALANCHE TRANSISTOR

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BAT54C SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers *


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    BAT54C OT323 ZUMT413 20MHz 10KHz AVALANCHE TRANSISTOR PDF

    SPB80P06P

    Abstract: PG-TO220-3 SPP80P06P
    Text: SPP80P06P G SPB80P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current


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    SPP80P06P SPB80P06P PG-TO263-3 PG-TO220-3 PDF

    SPB80P06P

    Abstract: SPP80P06P PG-TO220-3
    Text: SPP80P06P G SPB80P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current


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    SPP80P06P SPB80P06P PG-TO263-3 PG-TO220-3 25ngerous PDF

    a2231

    Abstract: laser LED AVALANCHE TRANSISTOR FMMT413 31AA u 413 DSA003693 CCP4 VF130
    Text: SOT23 NPN SILICON PLANAR AVALANCHE PROVISIONAL FMMT413 TRANSISTOR DATASHEET ISSUE 2- MARCH I 1 1996 FEATURES * Avalanche * 50A Peak avalanche mode operation * Low inductance current E c packaging APPLICATIONS * Laser LED drivers * Fast edge * High speed PARTMARKING


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    FMMT413 VF130V, FMMT413 a2231 laser LED AVALANCHE TRANSISTOR 31AA u 413 DSA003693 CCP4 VF130 PDF

    SPP80P06P H

    Abstract: SPP80P06PH spp80p06p PG-TO22
    Text: SPP80P06P H SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current • dv/dt rated


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    SPP80P06P IEC61249-2-21 PG-TO220-3 25the 726-SPP80P06PH SPP80P06P H SPP80P06PH PG-TO22 PDF

    spp80p06p

    Abstract: No abstract text available
    Text: SPP80P06P H SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current • dv/dt rated


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    SPP80P06P IEC61249-2-21 PG-TO220-3 25ntain PDF

    smps troubleshooting

    Abstract: AN-4134
    Text: FSQ110 Green Mode Fairchild Power Switch FPS Features Description ̈ Internal Avalanche-Rugged 650V SenseFET The FSQ110 consists of an integrated, current-mode, Pulse Width Modulator (PWM) and an avalanche-rugged 650V SenseFET. It is specifically designed for highperformance off-line Switch-Mode Power Supplies


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    FSQ110 FSQ110 100kHz MS-001 5M-1994 MKT-N08FREV2. smps troubleshooting AN-4134 PDF

    BUZ72A

    Abstract: No abstract text available
    Text: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY


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    BUZ72A 100oC 175oC O-220 BUZ72A PDF

    q0370r

    Abstract: q0270r Q0170R RCD snubber Q0270 zener ZP1 FSQ0370RNA FSQ0270RNA zener 4147 FSQ0170RNA
    Text: FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Green Mode Fairchild Power Switch FPS Features Description „ Internal Avalanche Rugged 700V SenseFET The FSQ0170RNA, FSQ0270RNA, FSQ0370RNA consists of an integrated current mode Pulse Width Modulator (PWM) and an avalanche-rugged 700V Sense


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    FSQ0170RNA, FSQ0270RNA, FSQ0370RNA 100kHz FSQ03nductor FSQ0370RNA q0370r q0270r Q0170R RCD snubber Q0270 zener ZP1 FSQ0270RNA zener 4147 FSQ0170RNA PDF

    q0270r

    Abstract: q0370r Q0170R Zener Diode 4148 zener T 4148 fairchild flyback design KSP2222A 33 equivalent zener 4147 zener 6v, 1w FSQ0370RNA
    Text: FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Green Mode Fairchild Power Switch FPS Features Description „ Internal Avalanche Rugged 700V SenseFET The FSQ0170RNA, FSQ0270RNA, FSQ0370RNA consists of an integrated current mode Pulse Width Modulator (PWM) and an avalanche-rugged 700V Sense


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    FSQ0170RNA, FSQ0270RNA, FSQ0370RNA 100kHz FSQ03 FSQ0370RNA q0270r q0370r Q0170R Zener Diode 4148 zener T 4148 fairchild flyback design KSP2222A 33 equivalent zener 4147 zener 6v, 1w PDF

    STP6N60FI

    Abstract: No abstract text available
    Text: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


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    STP6N60FI 100oC ISOWATT220 STP6N60FI PDF

    STD2N50

    Abstract: No abstract text available
    Text: STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 5.5 Ω 2A TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


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    STD2N50 100oC O-251) O-252) O-251 O-252 STD2N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation *


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    001G35S PDF

    AVALANCHE TRANSISTOR

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * * Fast edge generation High speed pulse generators


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    100hA ZTX413 20MHz AVALANCHE TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


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    001G35S PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSUE 2 - MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


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    FMMT413 FMMT413 7057fl 20MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: I BUZ11 BUZ11FI MAGNA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE FOR STANDARD PACKAGE ISOLATED PACKAGE UL RECOGNIZED,


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    BUZ11 BUZ11FI BUZ11 O-220 ISOWATT220 PDF

    STK2N50

    Abstract: No abstract text available
    Text: SGS-THOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N 50 ' V dss R d s oii Id 500 V 6 Ü 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION


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    STK2N50 OT-82 OT-194 STK2N50 PDF