SAT800X
Abstract: SAT3000 SAT3000x TO-37 avalanche Photodiode 300 nm . LIDAR photodiode SAT3000
Text: Silicon Avalanche Photodiode SAT-Series DESCRIPTION The SAT-Series is based on a “reach-through” structure for excellent quantum efficiency, high speed and targeted for the 1060 nm detection region. The chip is hermetically sealed in a modified TO-8 / TO-5
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sat3000x
SAT800X
SAT3000
TO-37
avalanche Photodiode 300 nm
. LIDAR
photodiode SAT3000
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C30902EH
Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as
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C30902EH
C30921EH
DTS0408
C30902SH-DTC
PerkinElmer Avalanche Photodiode
geiger apd
avalanche photodiodes
geiger
C30902
APD, laser, range, finder
avalanche photodiode ghz
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C30902SH-DTC
Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
Text: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the
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C30902EH
C30921EH
C30902SH-DTC
PerkinElmer Avalanche Photodiode
APD, laser, range, finder
C30902
geiger apd
C30902SH
PerkinElmer mode a
C3092SH-TC
PerkinElmer trigger mode
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SARF500
Abstract: SARF230
Text: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a „reach-through“ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain
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. LIDAR
Abstract: SARF500
Text: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a “reach-through“ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a „reach-through‘‘ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a “reach-through“ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain
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SARF500
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a „reach-through‘‘ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain
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Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection C30645 and C30662 Series Large Area InGaAs Avalanche Photodiodes Key Features • Spectral response 1100 - 1700 nm High responsivity Low dark current and noise Large area RoHS-compliant Available with lead-solder
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C30645
C30662
lo8628
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InGaAs apd photodiode
Abstract: UDT Sensors Photodiode laser detector BPX-65
Text: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can
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Untitled
Abstract: No abstract text available
Text: Large Area InGaAs Avalanche Photodiodes for 1550 nm eye-safe laser range finding applications Overview The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency. Q.E. , high responsivity and low noise in the
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C30645
C30662
cus49)
0411-803P
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ABB Semiconductors 5ssb
Abstract: 30X1700 abb traction motor 30X0900 thyristor ABB 5SSB30X0900 23X1200 30X0800 5SSB50X0500 5SSB30X1600
Text: Silicon Surge Voltage Suppressor 5SSB .X Series Doc. No. 5SYA 1031-01 Nov.95 Features The 5SSB silicon surge voltage suppressor consists of a diffused pnp-Si-wafer mounted with pressure contact in a hermetically sealed metal-ceramic-package. 5SSB silicon surge voltage suppressors are best suited to protect power thyristors against small
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50X0400
50X0500
38X0600
38X0700
30X0800
30X0900
nF/100
CH-5600
ABB Semiconductors 5ssb
30X1700
abb traction motor
30X0900
thyristor ABB
5SSB30X0900
23X1200
30X0800
5SSB50X0500
5SSB30X1600
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str 5707
Abstract: datasheet str 5707 STR 6707 SMPS CIRCUIT str 6707 STR S 6709 CIRCUIT str 6709 str 6707 diagram guide datasheet str 6707 str 6708 str 5708
Text: STR-S6525 INTERIM DATA SHEET STR-S6525 August 18, 1994 Data Sheet 28102.11 OFF-LINE SWITCHING REGULATOR Subject to change without notice OFF-LINE SWITCHING REGULATOR – WITH POWER MOSFET OUTPUT The STR-S6525 is specifically designed to meet the requirement
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STR-S6525
STR-S6525
str 5707
datasheet str 5707
STR 6707 SMPS CIRCUIT
str 6707
STR S 6709 CIRCUIT
str 6709
str 6707 diagram guide
datasheet str 6707
str 6708
str 5708
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NDL1202
Abstract: fiber optical photo detector Avalanche Photo Diode
Text: PHC’TO DIODE /* NDL1202 •>* OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.
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NDL12Ã
NDL1202
LC-1077D
1987M
fiber optical photo detector
Avalanche Photo Diode
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l1202
Abstract: nec A 1383
Text: DATA SHEET NEC PHOTO DIODE N D L1202 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.
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L1202
NDL1202
1987M
l1202
nec A 1383
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05p47
Abstract: 5SDA05p
Text: Avalanche Rectifier Diodes ABB Semiconductors AG I - Optimiert für Anwendungen mit Netzfrequenz. - Niedrige Durchlaßspannung, enge Durchlaß-Spannungsbereiche für Parallelschaltung. - Selbstschutz gegen transienten Überspannungen. - Garantierte maximale Verlustleistung
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Vrrm/100
14x100
50x100
05p47
5SDA05p
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NEC NDL1202 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 0 0 0 nm.
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NDL1202
NDL1202
tj427S2S
19S7M
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51414G
Abstract: 00534H siemens SFH nm 00535H
Text: Semiconductor Devices for FiberOptic Systems and High-Power Lasers Bauelemente für die LWL-Technik und Leistungslaser Detektoren für Glasfaseranwendungen Detectors for glass fiber applications S ilizium -PIN -Fotodioden Silicon PIN photodiodes fü r d a s 1. D u rc h la ß fe n s te r 800 - 9 0 0 nm
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00111Z
1214A
1414A
1314A
51214G
51414G
00534H
siemens SFH nm
00535H
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SFH2324
Abstract: SFH551V photodiode ge ma 850 SFH4646 sfh4845 850 nm photodiode pigtail SFH2310 SFH4423 Laser diode LAR
Text: Fiber Optic Emitters Part No. Package Outline SFH450 SFH750 Infrared/ Vielble Color Package Type T13/* light gray plastic T l3/4 red plastic Oh 10 mA NW Infrared 950 GaAs 90 Visible (Red) 660 GaAs 9 665 80 950. GaAs 90 (Hyper-Red) SFH752 Maximum Wave length
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SFW452V
SFH450
SFH750
SFH752
SFH450V
SFH250/V
SFH551/V.
SFH780V
SFH752V
SFH483401
SFH2324
SFH551V
photodiode ge
ma 850
SFH4646
sfh4845
850 nm photodiode pigtail
SFH2310
SFH4423
Laser diode LAR
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5SDA
Abstract: mml 600 71B0200 avalanche 850 nm 5SDA07D
Text: Rectifier Diodes ¡conductors AGI - O ptim ized for line frequency rectifiers. - Low on-state voltage, narrow V F-bands for parallel operation. - Self-protected against transient over voltages. - G uaranteed m axim um avalanche pow er dissipation. — O ptim iert für Anw endungen mit
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VRRM/100V
50x100
D01tifi36
5SDA
mml 600
71B0200
avalanche 850 nm
5SDA07D
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100EE
Abstract: photodiodes MIL temperature range
Text: Texas TIED 57/TIED 58 Silicon Avalanche Photodiode opcoe/e«ron,cs, ,n c. DESCRIPTION FEATURES • • • • • The TIED 57 and TIED 58 are high speed photodiodes with 10 mil or 30 mil active area diameters. Both are designed to operate in the reverse voltage avalanche mode. Applications
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57/TIED
T0-18
100EE
photodiodes MIL temperature range
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RE52
Abstract: No abstract text available
Text: T- V/ S 3 TEXAS OPTOELECTRONICS INC lOE » | ÖTbBTBM DDDOiaa 0 | WO# Texas Optoelectronics, Inc. - TIED 57/TIED 58 Silicon Avalanche Photodiode FEATURES DESCRIPTION Photocurrent gain > 600 Low noise 2 x 10- 13 W \/H z TO-18 construction Isolated case C o m p atib le with T IE F 150-152 tran s
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57/TIED
2x10-13
RE52
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LD 33 regulator
Abstract: flyback transformer design for mosFET flyback equivalent N and P MOSFET
Text: OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-S6525 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in a constant OFF-time mode. The device incorporates the
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STR-S6525
STR-S6525
LD 33 regulator
flyback transformer design for mosFET
flyback equivalent
N and P MOSFET
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Untitled
Abstract: No abstract text available
Text: Texas Optoelectronics, Inc. DESCRIPTION TIED 57/TIED 58 Silicon Avalanche Photodiode FEATURES The T IE D 57 and T IE D 58 are high speed photodiodes with 10 mil or 30 mih active area diameters. Both are designed to operate in the reverse voltage avalanche mode. Applications
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57/TIED
T0-18
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