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    54AC05/SDA-R Rochester Electronics LLC 54AC05 - Hex Inverter, With Open-Drain Outputs - Dual marked (5962R9059001SDA) Visit Rochester Electronics LLC Buy
    SAP5SD-A-G1-T Renesas Electronics Corporation AS-Interface Spec. V3.0 Compliant Universal AS-i IC Visit Renesas Electronics Corporation
    SAP5SD-A-G1-R Renesas Electronics Corporation AS-Interface Spec. V3.0 Compliant Universal AS-i IC Visit Renesas Electronics Corporation
    M38510/30605SDA Texas Instruments 8-Bit Parallel-Out Serial Shift Registers 14-CFP -55 to 125 Visit Texas Instruments Buy
    JM38510/30605SDA Texas Instruments 8-Bit Parallel-Out Serial Shift Registers 14-CFP -55 to 125 Visit Texas Instruments Buy
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    Hirose Electric Co Ltd HNC-2.5S-D-A(15)

    CONN SOCKET 22-26AWG CRIMP TIN
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    Renesas Electronics Corporation SAP5SD-A-G1-R

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    Microchip Technology Inc MSC015SDA120B

    DIODE SCHOTTKY 1.2KV 15A TO247
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    Hirose Electric Co Ltd HNC-2.5S-D-A(02)

    CONN SOCKET 22-26AWG CRIMP GOLD
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    Samtec Inc QFS-026-06.25-S-D-A

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    5SDA Datasheets (91)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5SDA05P3817 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P3827 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P3837 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P3847 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P4417 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P4427 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P4437 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P4447 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P5017 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P5027 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P5037 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA05P5047 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA06D3807 ABB Semiconductors Avalanche Rectifier Diode Original PDF
    5SDA06D4407 ABB Semiconductors Diode, 690A, 4400V, Avalanche Rectifier Diode Original PDF
    5SDA06D5007 ABB Semiconductors Diode, 690A, 5000V, Avalanche Rectifier Diode Original PDF
    5SDA06P3216 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA06P3226 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA06P3236 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA06P3246 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF
    5SDA06P3816 ABB Semiconductors Avalanche Rectifier Diodes Scan PDF

    5SDA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    s20a

    Abstract: No abstract text available
    Text: HDLV S20A-5SDAC Fsmily Description The S20A greatly expands the scope and capability of Switch Power’s High Density, Low Voltage HDLV product line. In a compact SIP just 3 inches long the S20A provides 20 Amps of output current at voltages between 1.25 and 3.5V. Using the space saving packaging of a SIP


    Original
    S20A-5SDAC S20A-5SDAC s20a PDF

    5SDA11D1702

    Abstract: No abstract text available
    Text: 5SDA 11D1702  5SDA 11D1702 Old part no. DA 807-1110-17 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 1 700 V RRM = 1 310


    Original
    11D1702 1768/138a, D/001/97c Sep-11 Sep-11 5SDA11D1702 PDF

    5SDA09D2604

    Abstract: No abstract text available
    Text: 5SDA 09D2604  5SDA 09D2604 Old part no. DA 807-880-26 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 600 V RRM = 1 020


    Original
    09D2604 09D2604 09D2304 1768/138a, DA/043/00b Sep-11 Sep-11 5SDA09D2604 PDF

    05P4417

    Abstract: 05P5047
    Text: 5SDA 05P50 5SDA 05P50 Old part no. DA 805-520-50 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability


    Original
    05P50 05P5017 05P4417 05P5027 05P4427 05P5037 05P4437 05P5047 05P4447 PDF

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 5000 IFAVM = 1410 IFSM = 17.5 VF0 = 1.13 rF = 0.44 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 14F5007 Doc. No. 5SYA 1126 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    14F5007 Apr-98 14F4407 14F3807 CH-5600 PDF

    3310 DIODE DATASHEET

    Abstract: 21F2904
    Text: Key Parameters VRRM = 3200 IFAVM = 2110 IFSM = 26.0 VF0 = 0.89 rF = 0.17 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 21F3204 Doc. No. 5SYA 1130 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    21F3204 Apr-98 21F2904 21F2604 CH-5600 3310 DIODE DATASHEET 21F2904 PDF

    27z1

    Abstract: No abstract text available
    Text: VRRM IPULSE VF VDcmax = = = = 12 60 7.32 10 kV kA V kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1202 Features Multichip Design with 6 Wafers in Series For Single Pulse Applications Voltage Sharing Resistors included Compact Design


    Original
    27Z1202 CH-5600 27z1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDA 09D2604  5SDA 09D2604 Old part no. DA 807-880-26 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 600 V RRM = 1 020


    Original
    09D2604 09D2304 1768/138a, DA/043/00c Nov-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDA 11D1702  5SDA 11D1702 Old part no. DA 807-1110-17 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 1 700 V RRM = 1 310


    Original
    11D1702 1768/138a, D/001/97d Nov-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDA 27F2002  5SDA 27F2002 Old part no. DA 808-2700-20 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 000 V RRM = 2 700


    Original
    27F2002 1768/138a, D/005/97d Nov-11 PDF

    5SDA09P1733

    Abstract: No abstract text available
    Text: 5SDA09P1733 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current850 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.7k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.13.5k V(FM) Max.(V) Forward Voltage1.35 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25


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    5SDA09P1733 Current850 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDA08P2044 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current770 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage2.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.11.5k V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25


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    5SDA08P2044 Current770 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDA19F2905 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.87k @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage2.9k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.23.5k V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)4.0k


    Original
    5SDA19F2905 StyleTO-200var75 PDF

    5SDA06P3816

    Abstract: 5SDA
    Text: 5SDA 06P38 5SDA 06P38 Old part no. DA 805-600-38 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability


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    06P38 06P3816 06P3216 06P3826 06P3226 06P3836 06P3236 06P3846 06P3246 5SDA06P3816 5SDA PDF

    5SDA 27Z1350

    Abstract: 27z1
    Text: VRRM IPULSE VF rF VDcmax = = = = = 13.5 60 7.89 0.69 12 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1350 Doc. No. 5SYA 06PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications


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    27Z1350 06PP-01 CH-5600 5SDA 27Z1350 27z1 PDF

    27z1

    Abstract: No abstract text available
    Text: VRRM IPULSE VF rF VDcmax = = = = = 12 60 7.32 0.48 10 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1202 Doc. No. 5SYA 05PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications


    Original
    27Z1202 05PP-01 CH-5600 27z1 PDF

    5SDA11D1702

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 1700 IFAVM = 1310 IFSM = 15.0 VF0 = 0.74 rF = 0.25 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 11D1702 Doc. No. 5SYA 1119 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    11D1702 Apr-98 11D1402 11D1102 Feb-98 CH-5600 5SDA11D1702 PDF

    10D1703

    Abstract: 10D2303 10D2003
    Text: Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    10D2303 Apr-98 10D2003 10D1703 CH-5600 10D2303 10D2003 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDA 07D3806  5SDA 07D3806 Old part no. DA 807-680-38 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 800 V RRM = 790


    Original
    07D3806 1768/138a, DA/042/00c Nov-11 PDF

    diode 12 kv

    Abstract: 27z1 HIGH VOLTAGE DIODE kv
    Text: VRRM IPULSE VF VDcmax = = = = 13.5 60 7.89 12 kV kA V kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1350 Features Multichip Design with 6 Wafers in Series For Single Pulse Applications Voltage Sharing Resistors included Compact Design


    Original
    27Z1350 CH-5600 diode 12 kv 27z1 HIGH VOLTAGE DIODE kv PDF

    5SDA24F2303

    Abstract: 24F2303 24F1703 24F2003
    Text: Key Parameters VRRM = 2300 IFAVM = 2350 IFSM = 29.0 VF0 = 0.84 rF = 0.13 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 24F2303 Doc. No. 5SYA 1131 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    24F2303 Apr-98 24F2003 24F1703 CH-5600 5SDA24F2303 24F2303 24F1703 24F2003 PDF

    06D4407

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 5000 IFAVM = 690 IFSM = 7.0 VF0 = 1.10 rF = 1.01 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 06D5007 Doc. No. 5SYA 1125 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


    Original
    06D5007 Apr-98 06D4407 06D3807 CH-5600 06D4407 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDA05P4447 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current520 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage4.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.0k V(FM) Max.(V) Forward Voltage2.4 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25


    Original
    5SDA05P4447 Current520 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDA05P4437 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current520 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage4.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.0k V(FM) Max.(V) Forward Voltage2.4 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25


    Original
    5SDA05P4437 Current520 PDF