Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRLR3636 HEXFET Power MOSFET Features l l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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AUIRLR3636
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRLR3636 HEXFET Power MOSFET Features l l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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AUIRLR3636
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AULR3636
Abstract: auirlr3636 AN-994 AEC-Q101-002 max9970
Text: PD - 97700 AUTOMOTIVE GRADE AUIRLR3636 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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AUIRLR3636
AULR3636
auirlr3636
AN-994
AEC-Q101-002
max9970
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Untitled
Abstract: No abstract text available
Text: PD - 97700 AUTOMOTIVE GRADE AUIRLR3636 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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AUIRLR3636
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Abstract: No abstract text available
Text: AUIRLR3636 D-Pak AUIRLR3636 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, thi
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AUIRLR3636
EIA-481
EIA-541.
EIA-481.
AUIRLR3636TR
AUIRLR3636TRL
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