Untitled
Abstract: No abstract text available
Text: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
|
Original
|
AUIRGP4063D
AUIRGP4063D-E
|
PDF
|
AUGP4063D
Abstract: AUIRGP4063D IGBT 4000V AU406
Text: PD - 97629 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
|
Original
|
AUIRGP4063D
AUIRGP4063D-E
AUGP4063D
IGBT 4000V
AU406
|
PDF
|
AUGP4062D
Abstract: AUIRGP4062D AUGP4062D-E
Text: PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 24A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA
|
Original
|
6353A
AUIRGP4062D
AUIRGP4062D-E
O-247AC
AUGP4062D
AUGP4062D-E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C
|
Original
|
AUIRGP4063D
AUIRGP4063D-E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 97629 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE AUIRGP4063D AUIRGP4063D-E C VCES = 600V Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C
|
Original
|
AUIRGP4063D
AUIRGP4063D-E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E VCES = 600V C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100°C Features • Low VCE on Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA
|
Original
|
AUIRGB4062D
AUIRGP4062D
AUIRGP4062D-E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 24A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA
|
Original
|
6353A
AUIRGP4062D
AUIRGP4062D-E
|
PDF
|
AUIRGB4062D
Abstract: AUIRGP4062D AUGP406 AECQ-10 AUGP4062D
Text: PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E VCES = 600V C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100°C Features • Low VCE on Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA
|
Original
|
AUIRGB4062D
AUIRGP4062D
AUIRGP4062D-E
AUIRGB4062D
AUIRGP4062D
AUGP406
AECQ-10
AUGP4062D
|
PDF
|
