Untitled
Abstract: No abstract text available
Text: TC554001AF/AFT/ATR-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to
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TC554001AF/AFT/ATR-70V
288-WORD
TC554001AF/AFT/ATR
304-bit
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Untitled
Abstract: No abstract text available
Text: TC554001AF/AFT/ATR-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to
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TC554001AF/AFT/ATR-70V
288-WORD
TC554001AF/AFT/ATR
304-bit
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ATR 120
Abstract: No abstract text available
Text: TC554001AF/AFT/ATR-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to
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TC554001AF/AFT/ATR-70V
288-WORD
TC554001AF/AFT/ATR
304-bit
ATR 120
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Untitled
Abstract: No abstract text available
Text: www.martekpower.com ATR-1500-12-Y 12V Output, 1500 Watts AC Front End FEATURES • Wide input voltage range 90-264VAC with active power factor correction • 1U configuration • Active current share with ORing FET • 12VDC @ 1A auxiliary standby power
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ATR-1500-12-Y
90-264VAC)
12VDC
ATR-1500-12-Y
ATR-1500-12-Y)
51938-126LF
51732-020LF
51940-099LF
51742-10600000AALF
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Untitled
Abstract: No abstract text available
Text: RUGGED SYSTEMS 12R1/12R2/12RC ATR ENCLOSURES ACCESSORIES SHELF MANAGEMENT BACKPLANES Rugged COTS: Products and Services Elma Electronic www.elma.com Elma Electronic ABOUT ELMA ELMA PRODUCT DIVISIONS Founded in 1962, Elma is an industry innovator in the design and manufacture
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12R1/12R2/12RC
VME/VME64x,
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ATR-4140L50
Abstract: No abstract text available
Text: ATR-4 400 VAC autotransformers, terminal blocks Autotransformers, open model, for switchboard mounting, to control the rotational speed of voltage controllable motors 400 VAC, 50/60 Hz (fans, pumps, among others). Connecting in “V” (2 transformers needed or straight 1 / phase (3 transformers needed).
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EN61558-2-13
T60/F
ATR-4140L50
ATR-4180L50
ATR-4-15L50
ATR-4-25L50
ATR-4-40L50
ATR-4-60L50
ATR-4-80L50
ATR-4110L50
ATR-4140L50
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ATR121
Abstract: ATR0603 BA 3922 ATR0402 ATR0805 ATR1206 marking code 99 marking atr
Text: THICK FILM CHIP RESISTORS •CONSTRUCTION Overcoating RuO2 Type Resistor 47E Alumina substrate Electrode 2873 563 ■OPERATING TEMPERATURE RANGE -55˚C ~ +155˚C Plating Ni+Sn Unit: mm ■DIMENSIONS Dimensions Type 2873 W L L1 L1 H L2 L2 L W H L1 L2 ATR 0402
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10000pcs
5000pcs
4000pcs
ATR121
ATR0603
BA 3922
ATR0402
ATR0805
ATR1206
marking code 99
marking atr
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2SB123B
Abstract: No abstract text available
Text: T ransistors ATR • ATV Approximately the same size as the TO-92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package | Part No. 2SA937AMLN Application ATR Low Noise ATV Driver Storobo Flash Low VcEtsat
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2SA937AMLN
2SC2021MLN
2SA037AM
2SC2021M
2SC4776M
2SA874M
2SB909M
2SB910M
28B911M
28B1042M
2SB123B
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2SB1485
Abstract: 2SB1460 2SB1307M 2sb909m 2SB1042M 2SD1866 2SB1242 2sd1225m
Text: Ei 1 ransistoi s ★★ PC board collector s copper foil area 1cm? or over; PC board thickness, 1.7mm ATR, ATV Types * Under Development Type ATR ATV — 2SA937MLN 2SC2021MLN — 2SA937M 2SA1547 2SC2021M 2SC4010 n W 2SC 4776M E 372SC4778 2SA1548 2SA874M
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2SB1242
Abstract: 2SB1326 2SB1485 2sc5083 2SD1660M 2SA1776 2sa192 2SB1240 2SD2315 2SA1548
Text: Transistors ATR • ATV Approximately the same size as the TO -92 w ith up to 1 W power cap ab ility. Taped type for automated placement or bulk packaging available. Package , Application VcEO V ATV ATR ^VcES %^VcER Part No. - 2SA937AMLN -5 0 40 50 -5 0
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2SA937AMLN
2SC2021MLN
2SA937AM
2SA1547A
2SC2021M
2SC4010
2SC4776M
2SC4778
2SA874M
2SA1548
2SB1242
2SB1326
2SB1485
2sc5083
2SD1660M
2SA1776
2sa192
2SB1240
2SD2315
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2SB909M
Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Text: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p
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2SA937AMLN
2SC2021MLN
2SA937AM
2SA1547A
2SC2021M
2SC4010
2SC4776M
2SC4778
2SA874M
2SA1548
2SB909M
2SC5083
2SD2315
2sb1242
2SB1460
2501863
2SD1225M
2Sc4776
2SB1130
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2SB1242
Abstract: 2SD 92 M 2SC401 2sd darlington 2SB1485
Text: T ra n s is to rs ATR • ATV Approximately the same size as the TO-92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package Application ATR ATV Part No. Driver Storobo Flash Low VcE sat Low VcE(sat) - 2SC2021M LN
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2SA937AM
2SC2021M
SC2021M
2SC4776M
SA874M
2SB909M
2SB910M
2SB911M
2SB1042M
2SB1242
2SD 92 M
2SC401
2sd darlington
2SB1485
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2SB1242
Abstract: 2SB1485
Text: T r a n s is to r s ATR • ATV Approximately the same size as the TO-92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package ATR Application VCEO V VcES * * V CER ATV Part No. _ 2SA937AMLN -5 0 40 50
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2SA937AMLN
2SC2021MLN
2SA937AM
2SC2021M
2SC4776M
2SA874M
2SB909M
2SB910M
2SB911M
2SB1042M
2SB1242
2SB1485
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC554001 AF/AFT/ATR-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524.288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
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TC554001
AF/AFT/ATR-70V
TC554001AF/AFT/ATR
304-bit
10mA/MHz
TC554001AF/AFT/ATR-70V
OP32-P-525-1
775TYP
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A10C
Abstract: A15C
Text: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
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AF/AFT/ATR-70V
TC554001AF/AFT/ATR
304-bit
10mA/MHz
OP32-P-525-1
32-P-400-1
35MAX
A10C
A15C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
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TC554001
AF/AFT/ATR-70V#
TC554001AF/AFT/ATR
304-bit
10mA/MHz
OP32-P-525-1
775TYP
32-P-400-1
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A15C
Abstract: TC554001 TSOP-II-32
Text: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
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TC554001
AF/AFT/ATR-70V
TC554001AF/AFT/ATR
304-bit
10mA/MHz
OP32-P-525-1
32-P-400-1
A15C
TSOP-II-32
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TC554001
Abstract: No abstract text available
Text: TO SH IBA T C554001AF/AFT/ATR-70V,-85V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524.288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
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TC554001
AF/AFT/ATR-70V
TC554001AF/AFT/ATR
304-bit
10mA/MHz
S-TD-75E
OP32-P-525-1
775TYP
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT SML-LX0402USBC/ATR PART NUMBER [0.031] r 0.50 [0.020] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25’C If = 20mA PARAMETER MAX MIN TYP 468 PEAK WAVELENGTH i. FORWARD VOLTAGE - 1.00 [0.039] - 5.0 36 4.0 100 120 VIEWING ANGLE EMITTED COLOR:
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SML-LX0402USBC/ATR
100/jA
468nm
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2SC2021LN
2SB821
2SB1276
2SC2021MLN
O-92L
O-92LS
2SB737
V2SD786
2SA1137
2SC1740
2SC1740 transistor
A1757
B1130AM
2SD2061F
2SD1466
2SC5083
B1236A
mos-fet darlington
2sc4721
transistor 2sa1819
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mitsubishi year code
Abstract: No abstract text available
Text: MITSUBISHI LSIs KÄ-atr- MH8V7245BWZTJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245BWZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8
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MH8V7245BWZTJ
8388608-word
72-bit
H8V7245BW
MIT-DS-0287-0
mitsubishi year code
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2SC2021LJNE)
2SB821
2SA937ALN
\2SC2021LN
2SB1276
2021M
2SA937AM
2SB737
2SD786
2SA1137
C2021M
B1568
mosfet ftr 03
2SC1B15
2SA1904
Mosfet FTR 03-E
2SC2021E
2SC1740 transistor
2SK2295
2S0240
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L - L X 1 1 1O SYC -ATR ELECTRO-OPTICAL CHARACTERISTICS Ta =25X PARAMETER MIN PEAK WAVELENGTH REVERSE VOLTAGE AXIAL INTENSITY LUMINOUS FLUX 0,50 [0,020] 2,40 [0,094] 2,00 [0,079] 1.70 [0.067] 2.0 1 Z.5 % YELLOW EPOXY LENS FINISH:
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350mA
19D00
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER SML-LX1 1 1OUSBC-ATR ELECTRO-OPTICAL CHARACTERISTICS Ta = 25X lf=350mA PARAMETER MIN TYP MAX UNITS PEAK WAVELENGTH 4-70 nm FORWARD VOLTAGE 3.5 4,0 Vf REVERSE VOLTAGE 5.0 Vr AXIAL INTENSITY 2BÛ0 mcd LUMINOUS FLUX 8 Im VIEWING ANGLE
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350mA
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