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    Hewlett Packard Co ATF-25570

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    Quest Components ATF-25570 78
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    ATF25570 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ATF-25570 Agilent Technologies 0.5-10 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF25570 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    ATF25570 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: ATF25570 Transistors N-Channel UHF/Microwave JFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)150m P(D) Max. (W)450m Maximum Operating Temp (øC)175 I(DSS) Min. (A)50m I(DSS) Max. (A)150m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.50m


    Original     		PDF ATF25570

    GHZ micro-X Package

    Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
    Text: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250


    Original     		PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100

    Untitled

    Abstract: No abstract text available
    Text: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4␣ GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • Hermetic Gold-Ceramic


    Original     		PDF ATF-25570 ATF-25570 5965-8711E 5966-4977E

    Untitled

    Abstract: No abstract text available
    Text: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4 GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0 dB Typical at 4 GHz • Hermetic Gold-Ceramic


    Original     		PDF ATF-25570 ATF-25570 5965-8711E 5966-4977E

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    ATF-25570

    Abstract: No abstract text available
    Text: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4␣ GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • Hermetic Gold-Ceramic


    Original     		PDF ATF-25570 ATF-25570

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870

    GHZ micro-X Package

    Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
    Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		PDF ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736

    GHZ micro-X Package

    Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
    Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136

    HSCH-5337

    Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301

    AT-41486

    Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862

    Untitled

    Abstract: No abstract text available
    Text: Thal H E W L E T T mLEMP A C K A R D 0 .5 -1 0 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 F eatures • High Output Power: 20.5 dBm Typical dB at 4 GHz • Low N oise Figure: 1.0 dB Typical at 4 GHz • High A ssociated Gain: 14.0 dB Typical at 4 GHz


    OCR Scan     		PDF ATF-25570 ATF-25570 44475A4

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    AT12570-5

    Abstract: AVANTEK s atf255 AVANTEK oscillator
    Text: EGE D AVANTEK INC ^A V A N TE K im n tb GG0bS7Q T ATF-25570 AT-12570-5 0.5-10 GHz General Purpose Gallium Arsenide FET Avantek 70 mil Package Features • High Output Power: 20.5 dBm typical Pi dB at 4 GHz • High Associated Gain: 14.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-25570 AT-12570-5) ATF-25570 310-371-Q717or310-371 AT12570-5 AVANTEK s atf255 AVANTEK oscillator

    AT12570-5

    Abstract: at-12570
    Text: ATF-25570 AT-12570-5 0.5-10 GHz General Purpose Gallium Arsenide FET W hol H EW LETT 1 "KM P A C K A R D Features • • • • 70 mil Package High Output Power: 20.5 dBm typical Pi dB at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz Low Noise Figure: 1.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-25570 AT-12570-5) ATF-25570 AT12570-5 at-12570

    ATF-35176

    Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
    Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5


    OCR Scan     		PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376