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    ATF21186 Price and Stock

    Hewlett Packard Co ATF-21186-TR1

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    Bristol Electronics ATF-21186-TR1 840
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    Agilent Technologies Inc ATF-21186-TR1

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    Bristol Electronics ATF-21186-TR1 820
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    Hewlett Packard Co ATF-21186

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    Quest Components ATF-21186 61
    • 1 $5.4
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    Avantek Inc ATF-21186-STR

    C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
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    Quest Components ATF-21186-STR 5
    • 1 $3.645
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    Hewlett Packard Co ATF-21186-STR

    C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATF-21186-STR 1
    • 1 $3.645
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    Find more ATF21186 price and stock on Findchips.com

    ATF21186 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATF21186 Agilent Technologies TRANSISTOR,JFET,N-CHANNEL,5V V(BR)DSS,80MA I(DSS),MICRO-X Original PDF
    ATF-21186 Agilent Technologies 0.5-6 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-21186 Hewlett-Packard 0.5-6 GHz General Purpose Gallium Arsenide FET Scan PDF
    ATF-21186-STR Agilent Technologies 0.5-6 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-21186-STR Agilent Technologies 0.5-6 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF21186-STR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-21186-TR1 Agilent Technologies 0.5-6 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-21186-TR1 Agilent Technologies 0.5-6 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF21186-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    ATF21186 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ATF21186 Transistors N-Channel UHF/Microwave JFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)200m P(D) Max. (W)400m Maximum Operating Temp (øC)175 I(DSS) Min. (A)80m I(DSS) Max. (A)200m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.70m


    Original     		PDF ATF21186

    GHZ micro-X Package

    Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
    Text: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250


    Original     		PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100

    zo 103 ma 75 607

    Abstract: ZO 103 MA 75 505 ATF-21186 P 1060 atf transistor zo 607 zo 607 MA ATF-21186-STR ATF-21186-TR1 5965-8716E
    Text: 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Description • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package


    Original     		PDF ATF-21186 ATF-21186 ATF-21186-TR1 ATF-21186-STR 5091-4862E 5965-8716E zo 103 ma 75 607 ZO 103 MA 75 505 P 1060 atf transistor zo 607 zo 607 MA ATF-21186-STR ATF-21186-TR1 5965-8716E

    Toko inductor 20211

    Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
    Text: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent


    Original     		PDF ATF-21186 ATF-21186, 5962-6875E Toko inductor 20211 AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686

    ZO 103 MA 75 505

    Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 ATF 136
    Text: 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Description • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package


    Original     		PDF ATF-21186 ATF-21186 5091-4862E 5965-8716E ZO 103 MA 75 505 ATF-21186-STR ATF-21186-TR1 ATF 136

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    ATF-13484

    Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue
    Text: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF ATF-10236 ATF-10136, ATF-13736, ATF-13484 ATF-21186 ATF-36163 ATF-36163 ATF-36077 ATF-13484 atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue

    marking IAM transistor sot-23

    Abstract: ATF-13170 transistor MARKING IAM IAM-XXX08 IAM-81008 HSMP 30XX HSMP 30XX ATF HSMS-282X HSMS-820X JESD22
    Text: Quality Assurance Concepts and␣ Methodology Semiconductor Devices and Hybrid␣ Assemblies Reliability/Quality Philosophy Recognizing the increasing importance of microwave component reliability for the consumer, industrial, and military markets, the Components Group


    Original     		PDF

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870

    GHZ micro-X Package

    Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
    Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		PDF ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736

    GHZ micro-X Package

    Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
    Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136

    ATF-21186

    Abstract: ATF-21186-STR ATF-21186-TR1 0840 057
    Text: 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Description • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package


    Original     		PDF ATF-21186 ATF-21186 ATF-21186-TR1 ATF-21186-STR ATF-21186-STR ATF-21186-TR1 0840 057

    ATF-13484

    Abstract: ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF-36163 ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF 5091-8350E 5966-0779E 5965-1235E ATF-36163 5965-5956E ATF-36077 5966-0783E ATF-36077 ATF-13484 ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077

    ATF SOT

    Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
    Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		PDF OT-363 SC-70) OT-343 ATF-36077 ATF-36163 ATF-34143 ATF-13336 ATF-13736 ATF-13786 ATF SOT ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136

    HSCH-5337

    Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301

    2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

    Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
    Text: guide HP Wireless Communications Products, Markets Part-to-Market Quick Guide, Version 4.0 Table of Contents Abbreviations of Wireless Terms . i Receivers, Transmitters Receivers . 1


    Original     		PDF 5965-7732E 5968-2348E 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx

    AT-41486

    Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862

    ATF-21186

    Abstract: ATF21186 at 21186
    Text: What H E W L E T T mi!KM P A C K A R D 0.5 to 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 85 m il P lastic Surface Mount Package Features • Low Noise Figure: 0.6 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. PldB @2 GHz • High MSG:


    OCR Scan     		PDF ATF-21186 ATF-21186 ATF-21186-TR1 ATF-21186-TR2 ATF-21186-STR ATF21186 at 21186

    P 1060 atf

    Abstract: No abstract text available
    Text: W hat H E W L E T T * mLliM P A C K A R D 0 .5 -6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 F e atu re s D escription • Low N oise Figure: 0.5 dBTyp. @ 2 GHz • High Output Pow er: 19 dBmTyp. PldB @ 2 GHz • High MSG: 13.5 dBTyp. @ 2 GHz


    OCR Scan     		PDF ATF-21186 ATF-21186 mic162 Rn/50 ATF-21186-TR1 ATF-21186-STR P 1060 atf

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    AN-G005

    Abstract: transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202
    Text: r m HEW LETT mL'/LM P A C K A R D Low N oise and M oderate P ow er A m plifiers U sin g th e ATF-21186 Application Note 1064 In tro d u c tio n This application note describes the use of a low cost Gallium Arsenide Field Effect T ransistor GaAs FET designed specifically


    OCR Scan     		PDF ATF-21186 ATF-21186, device40 5962-6875E AN-G005 transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202

    201 429 HP

    Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112
    Text: TAff% HEW LETT mLftM P A C K A R D 0 .5 - 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 Features Description • Low N o ise Figure: 0.5 dB Typ. @ 2 GHz • H igh O utpu t Pow er: 19 dBm Typ. P ldB @ 2 GHz • H igh MSG: 13.5 dB Typ. @ 2 GHz


    OCR Scan     		PDF ATF-21186 ATF-21186 Arse38 0G177Ã 5091-4862E 5965-8716E 201 429 HP ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112

    5965-8716E

    Abstract: ATF-21186
    Text: WfijM HEWLETT mLEM PACKARD 0 .5 -6 GHz General Purpose Gallium A rsenide FET Technical Data ATF-21186 F eatures D escription • Low N oise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. PldB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low C ost Surface Mount


    OCR Scan     		PDF ATF-21186 ATF-21186 5091-4862E 5965-8716E 44475A4 5965-8716E

    ATF-35176

    Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
    Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5


    OCR Scan     		PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376