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    ATF21100 Search Results

    ATF21100 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ATF21100-GP3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    ATF21100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


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    PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    ATF-21100

    Abstract: 6SS4 ATF-21100-GP1 AT-8111
    Text: HEWLETT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4 4 4 7 5 A 4 D D D T T I E T4fl H H P A ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features • • • Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical


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    PDF ATF-21100 AT-8111) ATF-21100 metalli33 6SS4 ATF-21100-GP1 AT-8111

    ATF-21100

    Abstract: AT-8111 Avantek amplifier 8 12 GHz ATF-21100-GP1 AVANTEK transistor Avantek UA-152
    Text: AVANTEK Q EOE D INC avan tek • llHllfab □ □ □ h S b G ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Avantek Chip Outline • • _483 p m _ • 7 Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical


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    PDF ATF-21100 AT-8111) ATF-21100 mi-172 AT-8111 Avantek amplifier 8 12 GHz ATF-21100-GP1 AVANTEK transistor Avantek UA-152

    ATF-21100

    Abstract: ATF-21100-GP1 ATF-21100-GP3 ATF21100 ATF21100-GP3 RF FET TRANSISTOR 3 GHZ atf21100 model AT-8111
    Text: HEWLETT-PACKARD/ CMPNTS m blE D • H EW LETT PA C K A R D 44475Ö4 □ □□cm 2 ATF-21100 AT-8111 0.5-6 GHz Low NoiS6 Gallium Arsenide FET Features • • • T4Û ■ HPA Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical


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    PDF ATF-21100 AT-8111) ATF-21100 ATF-21100-GP1 ATF-21100-GP3 ATF21100 ATF21100-GP3 RF FET TRANSISTOR 3 GHZ atf21100 model AT-8111

    ATF-35176

    Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
    Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5


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    PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376

    ATF21100-GP3

    Abstract: TF2110 ATF-21100-GP1
    Text: Thal HEWLETT WlHM PA C K A R D ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Chip Outline • • _ 4»3 • Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical at 4 GHz High Output Power: 23.0 dBm typical Pi dB


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    PDF ATF-21100 AT-8111) TF-21100 asS22 ATF21100-GP3 TF2110 ATF-21100-GP1